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Application filed by Osrodek Naukowo Prod MaterialofiledCriticalOsrodek Naukowo Prod Materialo
Priority to PL20292677ApriorityCriticalpatent/PL120490B3/pl
Publication of PL202926A1publicationCriticalpatent/PL202926A1/pl
Publication of PL120490B3publicationCriticalpatent/PL120490B3/pl
PL20292677A1977-12-141977-12-14Method of operation of the process of epitaxy of silicon from gaseous phase,especially on silicon substrate gazy,osobenno na kremnievojj podlozhke
PL120490B3
(en)