PL2122015T3 - Sposób wytwarzania monokryształu azotku przez wzrost epitaksjalny na podłożu zapobiegającym wzrostowi na krawędziach podłoża - Google Patents

Sposób wytwarzania monokryształu azotku przez wzrost epitaksjalny na podłożu zapobiegającym wzrostowi na krawędziach podłoża

Info

Publication number
PL2122015T3
PL2122015T3 PL06819930T PL06819930T PL2122015T3 PL 2122015 T3 PL2122015 T3 PL 2122015T3 PL 06819930 T PL06819930 T PL 06819930T PL 06819930 T PL06819930 T PL 06819930T PL 2122015 T3 PL2122015 T3 PL 2122015T3
Authority
PL
Poland
Prior art keywords
substrate
growth
edges
single crystal
nitride
Prior art date
Application number
PL06819930T
Other languages
English (en)
Inventor
Eric Aujol
Jean-Pierre Faurie
Bernard Beaumont
Original Assignee
Saint Gobain Cristaux & Detecteurs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Cristaux & Detecteurs filed Critical Saint Gobain Cristaux & Detecteurs
Publication of PL2122015T3 publication Critical patent/PL2122015T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL06819930T 2006-12-08 2006-12-08 Sposób wytwarzania monokryształu azotku przez wzrost epitaksjalny na podłożu zapobiegającym wzrostowi na krawędziach podłoża PL2122015T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06819930A EP2122015B1 (en) 2006-12-08 2006-12-08 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
PCT/EP2006/069474 WO2008067854A1 (en) 2006-12-08 2006-12-08 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate

Publications (1)

Publication Number Publication Date
PL2122015T3 true PL2122015T3 (pl) 2012-07-31

Family

ID=37964564

Family Applications (1)

Application Number Title Priority Date Filing Date
PL06819930T PL2122015T3 (pl) 2006-12-08 2006-12-08 Sposób wytwarzania monokryształu azotku przez wzrost epitaksjalny na podłożu zapobiegającym wzrostowi na krawędziach podłoża

Country Status (9)

Country Link
US (1) US8557042B2 (pl)
EP (1) EP2122015B1 (pl)
JP (1) JP5242587B2 (pl)
KR (1) KR101426319B1 (pl)
CN (1) CN101600819B (pl)
AT (1) ATE546568T1 (pl)
PL (1) PL2122015T3 (pl)
TW (1) TWI429796B (pl)
WO (1) WO2008067854A1 (pl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4565042B1 (ja) * 2009-04-22 2010-10-20 株式会社トクヤマ Ｉｉｉ族窒化物結晶基板の製造方法
JP5518566B2 (ja) * 2010-05-10 2014-06-11 信越半導体株式会社 窒化物半導体自立基板の製造方法
JP5845730B2 (ja) * 2011-08-30 2016-01-20 日亜化学工業株式会社 結晶基板の製造方法及び基板保持具
JP6130995B2 (ja) * 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
JP2013227202A (ja) * 2012-03-30 2013-11-07 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体結晶の製造方法、および、当該製造方法によって得られた周期表第１３族金属窒化物半導体結晶を用いた半導体発光デバイス
CN103074676B (zh) * 2012-09-13 2016-04-27 中国电子科技集团公司第四十六研究所 一种实现具有自剥离功能半导体材料生长的边缘保护方法
CN104835720B (zh) * 2015-04-13 2017-09-19 成都士兰半导体制造有限公司 一种半导体结构及其形成方法
CN114667371B (zh) * 2019-08-15 2025-05-13 晶化成半导体公司 氮化铝晶体的扩径
JP7290156B2 (ja) * 2021-02-05 2023-06-13 信越半導体株式会社 窒化物半導体基板及びその製造方法

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SE7710800L (sv) * 1976-10-05 1978-04-06 Western Electric Co Forfarande for astadkommande av ett epitaxiellt skikt pa ett substrat
US4448797A (en) * 1981-02-04 1984-05-15 Xerox Corporation Masking techniques in chemical vapor deposition
FR2585892B1 (fr) * 1985-08-05 1987-11-20 Girard Francois Dispositif de miniaturisation des connexions d'elements soumis a de tres fortes intensites electriques
FR2667197B1 (fr) * 1990-09-20 1993-12-24 Rosette Azoulay Procede d'epitaxie selective et de gravure de materiau iii-v ou ii-vi dans un meme bati de croissance omcvd.
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
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US7118929B2 (en) * 2000-07-07 2006-10-10 Lumilog Process for producing an epitaxial layer of gallium nitride
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
EP1041610B1 (en) * 1997-10-30 2010-12-15 Sumitomo Electric Industries, Ltd. GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
TW417315B (en) * 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same
JP4178619B2 (ja) 1998-10-27 2008-11-12 ソニー株式会社 シリコン層の製造方法および半導体装置の製造方法
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
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Also Published As

Publication number Publication date
JP5242587B2 (ja) 2013-07-24
US20100074826A1 (en) 2010-03-25
ATE546568T1 (de) 2012-03-15
CN101600819B (zh) 2012-08-15
JP2010511584A (ja) 2010-04-15
US8557042B2 (en) 2013-10-15
TWI429796B (zh) 2014-03-11
EP2122015A1 (en) 2009-11-25
CN101600819A (zh) 2009-12-09
KR101426319B1 (ko) 2014-08-06
TW200825221A (en) 2008-06-16
WO2008067854A1 (en) 2008-06-12
EP2122015B1 (en) 2012-02-22
KR20100014299A (ko) 2010-02-10

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PL2122015T3 (pl) Sposób wytwarzania monokryształu azotku przez wzrost epitaksjalny na podłożu zapobiegającym wzrostowi na krawędziach podłoża