PL2150504T3 - Sposób wytwarzania półwodzianu alfa siarczanu wapnia z dwuwodzianu siarczanu wapnia - Google Patents

Sposób wytwarzania półwodzianu alfa siarczanu wapnia z dwuwodzianu siarczanu wapnia

Info

Publication number
PL2150504T3
PL2150504T3 PL08758095T PL08758095T PL2150504T3 PL 2150504 T3 PL2150504 T3 PL 2150504T3 PL 08758095 T PL08758095 T PL 08758095T PL 08758095 T PL08758095 T PL 08758095T PL 2150504 T3 PL2150504 T3 PL 2150504T3
Authority
PL
Poland
Prior art keywords
calcium sulfate
producing alpha
hemihydrate
dihydrate
sulfate dihydrate
Prior art date
Application number
PL08758095T
Other languages
English (en)
Inventor
Reinhard Jäger
Alfred Brosig
Original Assignee
Grenzebach Bsh Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Grenzebach Bsh Gmbh filed Critical Grenzebach Bsh Gmbh
Publication of PL2150504T3 publication Critical patent/PL2150504T3/pl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B11/00Calcium sulfate cements
    • C04B11/02Methods and apparatus for dehydrating gypsum
    • C04B11/028Devices therefor characterised by the type of calcining devices used therefor or by the type of hemihydrate obtained
    • C04B11/032Devices therefor characterised by the type of calcining devices used therefor or by the type of hemihydrate obtained for the wet process, e.g. dehydrating in solution or under saturated vapour conditions, i.e. to obtain alpha-hemihydrate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B11/00Calcium sulfate cements
    • C04B11/02Methods and apparatus for dehydrating gypsum
    • C04B11/028Devices therefor characterised by the type of calcining devices used therefor or by the type of hemihydrate obtained
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in printed circuit boards [PCB], e.g. insert-mounted components [IMC]
    • H05K1/185Printed circuits structurally associated with non-printed electric components associated with components mounted in printed circuit boards [PCB], e.g. insert-mounted components [IMC] associated with components encapsulated in the insulating substrate of the PCBs; associated with components incorporated in internal layers of multilayer circuit boards
    • H05K1/188Printed circuits structurally associated with non-printed electric components associated with components mounted in printed circuit boards [PCB], e.g. insert-mounted components [IMC] associated with components encapsulated in the insulating substrate of the PCBs; associated with components incorporated in internal layers of multilayer circuit boards manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • H05K1/0204Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • H05K1/0207Cooling of mounted components using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06Thermal details
    • H05K2201/068Thermal details wherein the coefficient of thermal expansion is important
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10674Flip chip
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4602Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4641Manufacturing multilayer circuits by laminating two or more circuit boards having integrally laminated metal sheets or special power cores
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07321Aligning
    • H10W72/07323Active alignment, e.g. using optical alignment using marks or sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9413Dispositions of bond pads on encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49133Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49139Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
PL08758095T 2007-05-24 2008-05-20 Sposób wytwarzania półwodzianu alfa siarczanu wapnia z dwuwodzianu siarczanu wapnia PL2150504T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007024188A DE102007024188B3 (de) 2007-05-24 2007-05-24 Verfahren zur Herstellung von Alpha-Calciumsulfat-Halbhydrat aus Calciumsulfat-Dihydrat und zugehörige Vorrichtung
EP08758095A EP2150504B1 (de) 2007-05-24 2008-05-20 Verfahren zur herstellung von alpha-calciumsulfat-halbhydrat aus calciumsulfat-dihydrat
PCT/DE2008/000854 WO2008141627A1 (de) 2007-05-24 2008-05-20 Verfahren zur herstellung von alpha-calciumsulfat-halbhydrat aus calciumsulfat-dihydrat

Publications (1)

Publication Number Publication Date
PL2150504T3 true PL2150504T3 (pl) 2013-06-28

Family

ID=39154956

Family Applications (1)

Application Number Title Priority Date Filing Date
PL08758095T PL2150504T3 (pl) 2007-05-24 2008-05-20 Sposób wytwarzania półwodzianu alfa siarczanu wapnia z dwuwodzianu siarczanu wapnia

Country Status (13)

Country Link
US (1) US7951352B2 (pl)
EP (1) EP2150504B1 (pl)
JP (1) JP5161959B2 (pl)
KR (1) KR101121656B1 (pl)
CN (1) CN101679115B (pl)
CA (1) CA2685984C (pl)
DE (2) DE102007024188B3 (pl)
ES (1) ES2402838T3 (pl)
PL (1) PL2150504T3 (pl)
PT (1) PT2150504E (pl)
RU (1) RU2415818C1 (pl)
UA (1) UA92123C2 (pl)
WO (1) WO2008141627A1 (pl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102874858B (zh) * 2012-09-21 2014-10-22 孟庆前 一种工业副产品石膏的α晶型生产装置及方法
WO2015120570A1 (zh) * 2014-02-11 2015-08-20 刘凯 太阳能蒸压设备
CN104984699A (zh) * 2015-07-24 2015-10-21 南京西普水泥工程集团有限公司 一种有机肥反应釜电加热系统及其方法
US10351437B2 (en) * 2016-10-17 2019-07-16 Lidds Ab Method for producing calcium sulphate hemihydrate with unique properties
CN108439451A (zh) * 2018-06-25 2018-08-24 中化重庆涪陵化工有限公司 利用磷石膏制备轻质碳酸钙的方法
DE102018132082A1 (de) * 2018-12-13 2020-06-18 HKR Beteiligungs GmbH Schneckenförderer; Pyrolyseanlage; Verfahren zur Pyrolysierung eines Materials mittels eines beheizbaren Pyrolysereaktors
DE102018132084B4 (de) * 2018-12-13 2020-10-15 ARCUS Greencycling Technologies GmbH Schneckenförderer; Verfahren zur Beseitigung bzw. Verhinderung von Ablagerungen an einer Innenwand eines Rohres eines Schneckenförderers
CN109911927B (zh) * 2019-04-19 2024-05-10 王焕德 吸水结构、压力容器以及从其内部吸水的方法
WO2021254550A1 (de) * 2020-06-16 2021-12-23 ARCUS Greencycling Technologies GmbH Schneckenförderer; verfahren zur beseitigung bzw. verhinderung von ablagerungen an einer innenwand eines rohres eines schneckenförderers

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GB163468A (en) 1920-02-18 1921-05-18 William Malam Brothers Improvements in the manufacture of plaster of paris
US1901051A (en) 1929-08-08 1933-03-14 United States Gypsum Co High strength calcined gypsum and process of manufacturing same
US1979704A (en) * 1930-08-05 1934-11-06 United States Gypsum Co Method of producing high strength calcined gypsum
GB563019A (en) 1942-12-21 1944-07-26 Cuthbert Leslie Haddon Improvements in the manufacture of plaster of paris
DE937276C (de) * 1950-04-18 1955-12-29 Edmund Boergardts Verfahren und Vorrichtung zum Brennen von Gips
US2616789A (en) 1951-03-19 1952-11-04 Certain Teed Prod Corp Method of producing gypsum plaster
DE952967C (de) 1952-01-01 1956-11-22 Emil Thiel Anlage zum Entwaessern von Gips durch ueberhitzten gespannten Dampf
DE1157128B (de) 1962-05-25 1963-11-07 Giulini Ges Mit Beschraenkter Verfahren zur Herstellung von ª‡-Calciumsulfat-Halbhydrat aus synthetischem Calciumsulfat-Dihydrat
AU423448B2 (en) 1968-03-28 1972-04-21 Monzino Riotinto Of Australia Limited Production of alpha plaster
JPS5044192A (pl) * 1973-08-22 1975-04-21
JPS54152692A (en) * 1978-05-22 1979-12-01 Kanegafuchi Chem Ind Co Ltd Continuous manufacture of gypsum needle-like crystal
SU885179A1 (ru) * 1980-02-14 1981-11-30 Государственный Всесоюзный научно-исследовательский институт строительных материалов и конструкций им.П.П.Будникова Способ получени гипсового в жущего
JPH0742107B2 (ja) * 1987-05-06 1995-05-10 三菱重工業株式会社 α型半水石こうの製造方法
DE3844938C2 (de) 1987-05-22 1996-09-19 Pro Mineral Ges Verfahren zur Erzeugung von Calciumsulfat-Alphahalbhydrat aus feinteiligem Calciumsulfat und dessen Verwendung
GB2205089B (en) * 1987-05-22 1991-03-13 Rhein Westfael Elect Werk Ag Process for production of calcium sulphate alpha-hemihydrate
JPH01249636A (ja) * 1988-03-31 1989-10-04 Onoda Cement Co Ltd α型半水石膏の製造方法及び製造装置
RU2101252C1 (ru) * 1988-11-18 1998-01-10 Юнайтед Стейтс Джипсум Компани Сырьевая смесь для получения композиционного материала, композиционный материал, способ приготовления сырьевой смеси для получения композиционного материала и способ производства гипсоволокнистых плит
US5041333A (en) * 1989-02-24 1991-08-20 The Celotex Corporation Gypsum board comprising a mineral case
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JP3245436B2 (ja) * 1991-12-18 2002-01-15 呉羽化学工業株式会社 α型半水石膏の製造方法
DE4217978A1 (de) 1992-05-30 1993-12-02 Heidelberger Zement Ag Verfahren zur Herstellung von ALPHA-Halbhydrat aus Calciumsulfat-Dihydrat in einem Reaktor
CN1076675A (zh) * 1993-02-20 1993-09-29 东南大学 生产高强α型半水石膏的设备
DE4409219C2 (de) * 1994-03-18 1997-03-27 Salzgitter Anlagenbau Verfahren zur kontinuierlichen Herstellung von alpha-Calciumsulfat-Halbhydrat aus Calciumsulfat-Dihydrat
JP2000034121A (ja) * 1998-07-17 2000-02-02 Sumitomo Metal Mining Co Ltd 二水石膏の製造方法
RU2212384C1 (ru) * 2002-03-06 2003-09-20 Нижегородский государственный архитектурно-строительный университет Способ получения высокопрочного гипсового вяжущего

Also Published As

Publication number Publication date
CN101679115B (zh) 2012-07-04
RU2415818C1 (ru) 2011-04-10
EP2150504A1 (de) 2010-02-10
US7951352B2 (en) 2011-05-31
JP5161959B2 (ja) 2013-03-13
KR101121656B1 (ko) 2012-04-16
DE112008002038A5 (de) 2010-04-29
CA2685984A1 (en) 2008-11-27
PT2150504E (pt) 2013-04-16
ES2402838T3 (es) 2013-05-09
JP2010527876A (ja) 2010-08-19
CN101679115A (zh) 2010-03-24
CA2685984C (en) 2012-07-03
WO2008141627A1 (de) 2008-11-27
KR20100051590A (ko) 2010-05-17
DE102007024188B3 (de) 2008-04-10
EP2150504B1 (de) 2013-02-27
US20100166640A1 (en) 2010-07-01
UA92123C2 (ru) 2010-09-27

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