PL2203974T3 - Układy wejściowe dla tranzystorowego wzmacniacza mocy i sposób projektowania takich układów wejściowych - Google Patents

Układy wejściowe dla tranzystorowego wzmacniacza mocy i sposób projektowania takich układów wejściowych

Info

Publication number
PL2203974T3
PL2203974T3 PL08796359T PL08796359T PL2203974T3 PL 2203974 T3 PL2203974 T3 PL 2203974T3 PL 08796359 T PL08796359 T PL 08796359T PL 08796359 T PL08796359 T PL 08796359T PL 2203974 T3 PL2203974 T3 PL 2203974T3
Authority
PL
Poland
Prior art keywords
circuitry
designing
power amplifier
transistor power
input
Prior art date
Application number
PL08796359T
Other languages
English (en)
Inventor
John C. Tremblay
Colin S. Whelan
Raghu Mallavarpu
Matthew Tynach
Original Assignee
Raytheon Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Company filed Critical Raytheon Company
Publication of PL2203974T3 publication Critical patent/PL2203974T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/228—A measuring circuit being coupled to the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/249—A switch coupled in the input circuit of an amplifier being controlled by a circuit, e.g. feedback circuitry being controlling the switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/252—Multiple switches coupled in the input circuit of an amplifier are controlled by a circuit, e.g. feedback circuitry being controlling the switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/99—A diode as rectifier being used as a detecting circuit in an amplifying circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
PL08796359T 2007-09-07 2008-07-21 Układy wejściowe dla tranzystorowego wzmacniacza mocy i sposób projektowania takich układów wejściowych PL2203974T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/851,425 US7609115B2 (en) 2007-09-07 2007-09-07 Input circuitry for transistor power amplifier and method for designing such circuitry
EP08796359.1A EP2203974B1 (en) 2007-09-07 2008-07-21 Input circuitry for transistor power amplifier and method for designing such circuitry

Publications (1)

Publication Number Publication Date
PL2203974T3 true PL2203974T3 (pl) 2017-11-30

Family

ID=39869506

Family Applications (1)

Application Number Title Priority Date Filing Date
PL08796359T PL2203974T3 (pl) 2007-09-07 2008-07-21 Układy wejściowe dla tranzystorowego wzmacniacza mocy i sposób projektowania takich układów wejściowych

Country Status (8)

Country Link
US (1) US7609115B2 (pl)
EP (1) EP2203974B1 (pl)
JP (1) JP5113256B2 (pl)
KR (1) KR101116776B1 (pl)
CN (2) CN101796720A (pl)
PL (1) PL2203974T3 (pl)
TW (1) TWI420806B (pl)
WO (1) WO2009035767A1 (pl)

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US8779857B2 (en) * 2009-08-14 2014-07-15 Qualcomm Incorporated Amplifier with variable matching circuit to improve linearity
US8829999B2 (en) 2010-05-20 2014-09-09 Cree, Inc. Low noise amplifiers including group III nitride based high electron mobility transistors
TW201210161A (en) * 2010-08-27 2012-03-01 Yeou Jenq Electric Co Ltd Programmable electric circuit control apparatus
TWI428611B (zh) 2010-09-10 2014-03-01 Ind Tech Res Inst 零偏壓式功率偵測器
JP5541114B2 (ja) * 2010-11-25 2014-07-09 三菱電機株式会社 電力増幅器とそれを用いたｍｍｉｃ
US9306502B2 (en) 2011-05-09 2016-04-05 Qualcomm Incorporated System providing switchable impedance transformer matching for power amplifiers
US8476979B1 (en) 2011-07-07 2013-07-02 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration High-efficiency power module
WO2013066466A2 (en) * 2011-08-12 2013-05-10 Bae Systems Integration And Electronic Systems Integration Inc. Low voltage high efficiency gallium arsenide power amplifier
CN102427338B (zh) * 2011-09-26 2015-05-20 无锡易芯微电子有限公司 自动变换输入阻抗的信号放大器及其实现方法
KR101300324B1 (ko) * 2011-11-22 2013-08-28 삼성전기주식회사 전력 증폭기
JP5680004B2 (ja) * 2012-02-07 2015-03-04 三菱電機株式会社 多段増幅器
US8970297B2 (en) 2012-03-19 2015-03-03 Qualcomm Incorporated Reconfigurable input power distribution doherty amplifier with improved efficiency
CN102655394B (zh) * 2012-05-23 2014-12-10 中国电子科技集团公司第五十五研究所 一种直流与微波信号交叉布线的放大器电路
US9031518B2 (en) 2012-12-17 2015-05-12 Qualcomm Incorporated Concurrent hybrid matching network
US9698740B2 (en) 2014-07-14 2017-07-04 Skyworks Solutions, Inc. Mode linearization switch circuit
US9621119B2 (en) * 2015-02-13 2017-04-11 Skyworks Solutions, Inc. Power amplifier bias signal multiplexing
WO2016195859A1 (en) * 2015-05-29 2016-12-08 Rf Micro Devices, Inc. Linear power amplifier
CN109150132A (zh) * 2017-06-19 2019-01-04 展讯通信（上海）有限公司 阻抗调谐方法、装置及移动终端
US10263566B1 (en) * 2017-09-28 2019-04-16 Raytheon Company Radio frequency power amplifier
TWI688203B (zh) 2017-12-14 2020-03-11 財團法人工業技術研究院 寬頻轉阻放大器電路
CN114024512B (zh) * 2021-10-11 2023-07-21 电子科技大学 一种频分双工的超宽带低噪声放大器
CN116094471A (zh) * 2021-11-05 2023-05-09 苏州远创达科技有限公司 一种功率放大器的超宽带输入匹配电路、装置及系统
US12306232B2 (en) * 2023-01-27 2025-05-20 Apple Inc. Power detector for detecting radio frequency power output

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JP3005472B2 (ja) * 1996-07-26 2000-01-31 埼玉日本電気株式会社 受信機
JP2929284B2 (ja) * 1997-09-10 1999-08-03 株式会社アドテック 高周波プラズマ処理装置のためのインピーダンス整合及び電力制御システム
US6300835B1 (en) * 1999-12-10 2001-10-09 Motorola, Inc. Power amplifier core
KR100325420B1 (ko) * 2000-02-15 2002-02-21 강인호 개선된 이득을 갖는 포락선 추적 증폭기, 이를 이용한 이동 통신 단말기 및 그에 관한 이득 개선 방법
JP2001332935A (ja) * 2000-05-19 2001-11-30 Fujitsu Ltd マイクロ波増幅器
WO2002003544A1 (en) * 2000-06-30 2002-01-10 Mitsubishi Denki Kabushiki Kaisha High-frequency amplifier
DE60116676T2 (de) * 2001-02-27 2006-10-19 Telefonaktiebolaget Lm Ericsson (Publ) Mehrband-Transformationsstufe für eine Mehrband-HF-Umschaltvorrichtung
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JP2005045440A (ja) * 2003-07-25 2005-02-17 Toshiba Corp 電力増幅器及びこれを用いた無線通信装置
US7501669B2 (en) * 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
CN1641998A (zh) * 2004-01-16 2005-07-20 络达科技股份有限公司 可切换式增益放大器
US7183844B2 (en) * 2004-12-30 2007-02-27 Motorola, Inc. Multi-state load switched power amplifier for polar modulation transmitter
SE528473C2 (sv) * 2005-02-28 2006-11-21 Infineon Technologies Ag Monolitiskt integrerad effektförstärkaranordning
TWI306690B (en) * 2006-01-27 2009-02-21 Univ Nat Chiao Tung Ultra broad-band low noise amplifier utilizing dual feedback technique
JP5028966B2 (ja) * 2006-11-15 2012-09-19 日本電気株式会社 増幅器

Also Published As

Publication number Publication date
JP5113256B2 (ja) 2013-01-09
CN101796720A (zh) 2010-08-04
US20090066439A1 (en) 2009-03-12
JP2010538582A (ja) 2010-12-09
TW200917646A (en) 2009-04-16
US7609115B2 (en) 2009-10-27
EP2203974A1 (en) 2010-07-07
TWI420806B (zh) 2013-12-21
CN105305986B (zh) 2019-06-18
KR101116776B1 (ko) 2012-02-28
EP2203974B1 (en) 2017-03-29
CN105305986A (zh) 2016-02-03
KR20100063767A (ko) 2010-06-11
WO2009035767A1 (en) 2009-03-19

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