PL2414567T3 - Semipolarny kryształ półprzewodnika i sposób jego wytwarzania - Google Patents

Semipolarny kryształ półprzewodnika i sposób jego wytwarzania

Info

Publication number
PL2414567T3
PL2414567T3 PL11709883T PL11709883T PL2414567T3 PL 2414567 T3 PL2414567 T3 PL 2414567T3 PL 11709883 T PL11709883 T PL 11709883T PL 11709883 T PL11709883 T PL 11709883T PL 2414567 T3 PL2414567 T3 PL 2414567T3
Authority
PL
Poland
Prior art keywords
production
semipolar semiconductor
semipolar
semiconductor
Prior art date
Application number
PL11709883T
Other languages
English (en)
Inventor
Thomas Wunderer
Stephan Schwaiger
Ilona Schwaiger
Rudolph Rösch
Frank Lipski
Ferdinand Scholz
Original Assignee
Freiberger Compound Mat Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Mat Gmbh filed Critical Freiberger Compound Mat Gmbh
Publication of PL2414567T3 publication Critical patent/PL2414567T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL11709883T 2010-03-18 2011-03-18 Semipolarny kryształ półprzewodnika i sposób jego wytwarzania PL2414567T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010011895A DE102010011895B4 (de) 2010-03-18 2010-03-18 Verfahren zur Herstellung eines semipolaren Gruppe III-Nitrid-Kristalls, Substrat, freistehendes semipolares Substrat und Verwendung der Substrate
EP11709883.0A EP2414567B1 (de) 2010-03-18 2011-03-18 Semipolarer halbleiterkristall und verfahren zur herstellung desselben
PCT/EP2011/001339 WO2011113605A1 (de) 2010-03-18 2011-03-18 Semipolarer halbleiterkristall und verfahren zur herstellung desselben

Publications (1)

Publication Number Publication Date
PL2414567T3 true PL2414567T3 (pl) 2014-04-30

Family

ID=43828177

Family Applications (1)

Application Number Title Priority Date Filing Date
PL11709883T PL2414567T3 (pl) 2010-03-18 2011-03-18 Semipolarny kryształ półprzewodnika i sposób jego wytwarzania

Country Status (6)

Country Link
US (1) US8536030B2 (pl)
EP (1) EP2414567B1 (pl)
JP (1) JP5810105B2 (pl)
DE (1) DE102010011895B4 (pl)
PL (1) PL2414567T3 (pl)
WO (1) WO2011113605A1 (pl)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4396816B2 (ja) * 2003-10-17 2010-01-13 日立電線株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
TWI425666B (zh) * 2011-04-27 2014-02-01 國立中央大學 Growth of semi - polarized nitrides
EP2770089B1 (en) * 2011-10-21 2025-03-05 Mitsubishi Chemical Corporation Gallium NITRIDE SEMICONDUCTOR CRYSTAL
US10435812B2 (en) 2012-02-17 2019-10-08 Yale University Heterogeneous material integration through guided lateral growth
GB2502818A (en) * 2012-06-08 2013-12-11 Nanogan Ltd Epitaxial growth of semiconductor material such as Gallium Nitride on oblique angled nano or micro-structures
KR101504731B1 (ko) * 2012-11-30 2015-03-23 주식회사 소프트에피 3족 질화물 반도체 적층체
WO2014136602A1 (ja) * 2013-03-08 2014-09-12 国立大学法人山口大学 窒化ガリウム結晶自立基板の製造方法
DE102013208223B4 (de) * 2013-05-06 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements
KR20150031122A (ko) * 2013-09-13 2015-03-23 현대자동차주식회사 반도체 소자의 제조 방법
US9978845B2 (en) * 2014-04-16 2018-05-22 Yale University Method of obtaining planar semipolar gallium nitride surfaces
US9978589B2 (en) 2014-04-16 2018-05-22 Yale University Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substrates
FR3021454B1 (fr) * 2014-05-20 2019-12-13 Centre National De La Recherche Scientifique (Cnrs) Procede de fabrication d'un materiau semi-conducteur incluant une couche de nitrure d'element iii semi-polaire
JP7344426B2 (ja) * 2014-11-26 2023-09-14 株式会社Flosfia 結晶性積層構造体
JP6945119B2 (ja) * 2014-11-26 2021-10-06 株式会社Flosfia 結晶性積層構造体およびその製造方法
JP2016100593A (ja) * 2014-11-26 2016-05-30 株式会社Flosfia 結晶性積層構造体
JP6638152B2 (ja) * 2015-02-25 2020-01-29 株式会社Flosfia 蛍光体組成物の製造方法および発光装置
DE102015109761B4 (de) 2015-06-18 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Nitrid-Halbleiterbauelements und Nitrid-Halbleiterbauelement
FR3037711A1 (fr) * 2015-06-18 2016-12-23 Commissariat Energie Atomique Procede permettant d'obtenir sur un substrat cristallin une couche semi-polaire de nitrure obtenu avec l'un au moins parmi les materiaux suivants : gallium (ga), indium (in) et aluminium (al)
KR20190038639A (ko) 2016-08-12 2019-04-08 예일 유니버시티 성장 동안 질소 극성 패시트를 제거함으로써 외래 기판 상에 성장된 적층 무결함 반극성 및 비극성 GaN
JP6778579B2 (ja) * 2016-10-18 2020-11-04 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
US10697090B2 (en) * 2017-06-23 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Thin-film structural body and method for fabricating thereof
EP3556911A1 (fr) * 2018-04-19 2019-10-23 Comadur S.A. Procédé de structuration d'un motif décoratif ou technique dans un objet réalisé en un matériau amorphe, semi-cristallin ou cristallin au moins partiellement transparent
JP7108783B2 (ja) * 2019-03-28 2022-07-28 日本碍子株式会社 半導体膜
CN110112266B (zh) * 2019-05-22 2020-04-28 湘能华磊光电股份有限公司 Led外延片衬底结构及制作方法
CN110504301A (zh) * 2019-09-09 2019-11-26 南方科技大学 一种iii族氮化物晶体管外延结构和晶体管器件
US11145507B2 (en) * 2019-12-16 2021-10-12 Wafer Works Corporation Method of forming gallium nitride film over SOI substrate
FR3118306B1 (fr) * 2020-12-22 2023-05-05 Commissariat Energie Atomique Procédé de réalisation d’un dispositif optoélectronique comportant des LED à base de nitrure
CN119789619A (zh) * 2024-11-18 2025-04-08 山东大学 一种具有倒“v”结构的非极性氮化镓衬底材料及其制备方法和应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101845670A (zh) * 2005-03-10 2010-09-29 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
KR100809209B1 (ko) * 2006-04-25 2008-02-29 삼성전기주식회사 비극성 ｍ면 질화물 반도체 제조방법
JP5353113B2 (ja) * 2008-01-29 2013-11-27 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
JP5392855B2 (ja) * 2008-08-25 2014-01-22 国立大学法人山口大学 半導体基板及びその製造方法

Also Published As

Publication number Publication date
DE102010011895B4 (de) 2013-07-25
US8536030B2 (en) 2013-09-17
EP2414567B1 (de) 2013-11-20
DE102010011895A1 (de) 2011-09-22
JP5810105B2 (ja) 2015-11-11
EP2414567A1 (de) 2012-02-08
JP2013522152A (ja) 2013-06-13
US20110227198A1 (en) 2011-09-22
WO2011113605A1 (de) 2011-09-22

Similar Documents

Publication Publication Date Title
PL2414567T3 (pl) Semipolarny kryształ półprzewodnika i sposób jego wytwarzania
SG10201501458TA (en) Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
EP2551863A4 (en) REACTOR AND METHOD FOR MANUFACTURING THE SAME
GB2498675B (en) Semiconductor structure and methods of manufacture
GB2488401B (en) Method of manufacturing semiconductor device structure
GB201108864D0 (en) Transistors and methods of making them
IL248217B (en) A method for the production of inganol-3-englate
GB2492255B (en) Catalyst and method of catalyst manufacture
GB2503842B (en) Composition and method of manufacture
GB201207208D0 (en) Compound and method of manufacture
GB2494358B (en) Bipolar transistor structure and method of forming the structure
ZA201209370B (en) Method for manufacturing of quinoline-3-carboxamides
EP2525634A4 (en) SUBSTRATE AND METHOD FOR MANUFACTURING THE SUBSTRATE
GB201107828D0 (en) Assembly and method of manufacture thereof
EP2618818A4 (en) CORTICOSTEROID PARTICLES AND METHOD FOR PRODUCING THE SAME
GB2492442B (en) Transistor and its method of manufacture
GB201004096D0 (en) Production of polyhydroalkanoates
LU91754B1 (en) Semiconductor material and method of production
TWI562385B (en) Semiconductor device and method of making the same
GB201115521D0 (en) Colorant-polyesters and methods of producing colorant-polyesters
EP2557903A4 (en) METHOD FOR PRODUCING AN EXTERNAL LEADER
EP2533963A4 (en) SYSTEMS AND METHODS FOR MANUFACTURING MICROSTRUCTURES
GB2509246B (en) Component and method of formation thereof
GB201011628D0 (en) Production of nanoparticles
GB2492532B (en) Transistor and its method of manufacture