PL2833703T3 - High-frequency power supply device and reflected wave power control method - Google Patents

High-frequency power supply device and reflected wave power control method

Info

Publication number
PL2833703T3
PL2833703T3 PL13807713T PL13807713T PL2833703T3 PL 2833703 T3 PL2833703 T3 PL 2833703T3 PL 13807713 T PL13807713 T PL 13807713T PL 13807713 T PL13807713 T PL 13807713T PL 2833703 T3 PL2833703 T3 PL 2833703T3
Authority
PL
Poland
Prior art keywords
control method
supply device
reflected wave
power supply
power control
Prior art date
Application number
PL13807713T
Other languages
Polish (pl)
Inventor
Itsuo Yuzurihara
Satoshi Aikawa
Hiroshi Kunitama
Original Assignee
Kyosan Electric Mfg. Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosan Electric Mfg. Co., Ltd. filed Critical Kyosan Electric Mfg. Co., Ltd.
Publication of PL2833703T3 publication Critical patent/PL2833703T3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944Arc detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/539Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00Auxiliary systems
    • H05H2242/20Power circuits
    • H05H2242/26Matching networks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
PL13807713T 2012-06-18 2013-06-03 High-frequency power supply device and reflected wave power control method PL2833703T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012136942A JP5534365B2 (en) 2012-06-18 2012-06-18 High frequency power supply device and reflected wave power control method

Publications (1)

Publication Number Publication Date
PL2833703T3 true PL2833703T3 (en) 2017-09-29

Family

ID=49768589

Family Applications (1)

Application Number Title Priority Date Filing Date
PL13807713T PL2833703T3 (en) 2012-06-18 2013-06-03 High-frequency power supply device and reflected wave power control method

Country Status (10)

Country Link
US (1) US9070537B2 (en)
EP (1) EP2833703B1 (en)
JP (1) JP5534365B2 (en)
KR (1) KR101523484B1 (en)
CN (1) CN104322154B (en)
DE (1) DE13807713T1 (en)
IN (1) IN2014KN02415A (en)
PL (1) PL2833703T3 (en)
TW (1) TWI472270B (en)
WO (1) WO2013190987A1 (en)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5831944B2 (en) * 2009-10-09 2015-12-09 ディーエイチ テクノロジーズ デベロップメント プライベート リミテッド Apparatus for measuring RF voltage from a quadrupole in a mass spectrometer
WO2014094738A2 (en) * 2012-12-18 2014-06-26 TRUMPF Hüttinger GmbH + Co. KG Arc extinguishing method and power supply system having a power converter
DE102013205936B4 (en) * 2013-04-04 2016-07-14 TRUMPF Hüttinger GmbH + Co. KG Method for controlling a controlled system with a standardized selection variable
DE102013110883B3 (en) 2013-10-01 2015-01-15 TRUMPF Hüttinger GmbH + Co. KG Apparatus and method for monitoring a discharge in a plasma process
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
WO2015073921A1 (en) 2013-11-14 2015-05-21 Eagle Harbor Technologies, Inc. This disclosure relates generally to a high voltage nanosecond pulser.
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
JP5704772B1 (en) * 2014-02-04 2015-04-22 株式会社京三製作所 High frequency power supply device and plasma ignition method
EP2905801B1 (en) * 2014-02-07 2019-05-22 TRUMPF Huettinger Sp. Z o. o. Method of monitoring the discharge in a plasma process and monitoring device for monitoring the discharge in a plasma
WO2015131199A1 (en) 2014-02-28 2015-09-03 Eagle Harbor Technologies, Inc. Galvanically isolated output variable pulse generator disclosure
US10483089B2 (en) * 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
JP6362931B2 (en) * 2014-06-19 2018-07-25 株式会社ダイヘン High frequency power supply
JP5797313B1 (en) * 2014-08-25 2015-10-21 株式会社京三製作所 Regenerative circulator, high frequency power supply device, and high frequency power regeneration method
JP6474985B2 (en) * 2014-09-30 2019-02-27 株式会社ダイヘン High frequency power supply
JP6524753B2 (en) * 2015-03-30 2019-06-05 東京エレクトロン株式会社 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM
US9577516B1 (en) * 2016-02-18 2017-02-21 Advanced Energy Industries, Inc. Apparatus for controlled overshoot in a RF generator
US10903047B2 (en) 2018-07-27 2021-01-26 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US10026592B2 (en) * 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
JP6157036B1 (en) * 2016-07-08 2017-07-05 株式会社京三製作所 High frequency power supply device and control method of high frequency power supply device
CN110692188B (en) 2017-02-07 2022-09-09 鹰港科技有限公司 Transformer resonant converter
EP3813259B1 (en) * 2017-03-31 2022-10-26 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11094505B2 (en) * 2017-07-07 2021-08-17 Asm Ip Holding B.V. Substrate processing apparatus, storage medium and substrate processing method
JP7027720B2 (en) * 2017-08-07 2022-03-02 富士電機株式会社 Power converter
CN111264032B (en) 2017-08-25 2022-08-19 鹰港科技有限公司 Arbitrary waveform generation using nanosecond pulses
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10622191B2 (en) 2018-02-09 2020-04-14 Asm Ip Holding B.V. Substrate processing method
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
CN110504149B (en) * 2018-05-17 2022-04-22 北京北方华创微电子装备有限公司 Pulse modulation system and method of radio frequency power supply
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10607814B2 (en) 2018-08-10 2020-03-31 Eagle Harbor Technologies, Inc. High voltage switch with isolated power
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
EP3834285B1 (en) 2018-08-10 2024-12-25 Eagle Harbor Technologies, Inc. Plasma sheath control for rf plasma reactors
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
JP7320608B2 (en) 2019-01-08 2023-08-03 イーグル ハーバー テクノロジーズ,インク. Efficient Energy Recovery in Nanosecond Pulser Circuits
JP7451540B2 (en) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド Feedback loop for controlling pulsed voltage waveforms
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
CN111725091A (en) * 2019-03-22 2020-09-29 北京北方华创微电子装备有限公司 Method and apparatus for optimizing process flow, storage medium and semiconductor processing equipment
AU2020357804B2 (en) 2019-10-01 2023-11-23 Pulse Biosciences, Inc. Apparatuses and methods for limiting load current in nanosecond pulsed power sources
KR102223876B1 (en) * 2019-10-28 2021-03-05 주식회사 뉴파워 프라즈마 Multiple voltage control method and high frequency power device with multiple voltage control function, for resolving mismatching aspect
TWI778449B (en) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 High voltage pulsing circuit
KR20230150396A (en) 2019-12-24 2023-10-30 이글 하버 테크놀로지스, 인코포레이티드 Nanosecond pulser rf isolation for plasma systems
US11670488B2 (en) * 2020-01-10 2023-06-06 COMET Technologies USA, Inc. Fast arc detecting match network
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
CN112034377A (en) * 2020-08-27 2020-12-04 国家电网有限公司 Detection device for reflected wave power of high-frequency power supply and use method thereof
CN114446752B (en) * 2020-11-04 2024-04-05 中微半导体设备(上海)股份有限公司 Method and device for detecting electric arc in plasma processing cavity
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11587765B2 (en) 2020-11-22 2023-02-21 Applied Materials, Inc. Plasma ignition optimization in semiconductor processing chambers
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
JPWO2023210399A1 (en) * 2022-04-25 2023-11-02
US12531592B2 (en) 2022-06-01 2026-01-20 Apple Inc. Electronic device with couplers for power wave detection in multiple reference planes
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
JP7833099B2 (en) 2022-09-29 2026-03-18 イーグル ハーバー テクノロジーズ,インク. High-voltage plasma control
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
KR102738268B1 (en) 2023-06-22 2024-12-04 주식회사 뉴파워 프라즈마 Signal processing device using notch filter capable of varying frequency
CN119601446B (en) * 2023-09-08 2026-01-09 中微半导体设备(上海)股份有限公司 Method and device for detecting electric arc of plasma processing chamber
CN121485646B (en) * 2026-01-09 2026-04-17 天津吉兆源科技有限公司 Semiconductor device, pulse radio frequency power supply and control method thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5195045A (en) * 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
JPH0732078B2 (en) 1993-01-14 1995-04-10 株式会社アドテック High frequency plasma power supply and impedance matching device
JPH10257774A (en) 1997-03-07 1998-09-25 Horiba Ltd High-frequency power supply unit
JP4772232B2 (en) * 2001-08-29 2011-09-14 アジレント・テクノロジーズ・インク High frequency amplifier circuit and driving method of high frequency amplifier circuit
JP2003143861A (en) * 2001-10-31 2003-05-16 Daihen Corp High frequency power supply
JP3893276B2 (en) 2001-12-04 2007-03-14 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP3998986B2 (en) * 2002-01-22 2007-10-31 株式会社ダイヘン Traveling wave power control method of high frequency power supply and high frequency power supply apparatus
JP4332322B2 (en) 2002-06-05 2009-09-16 パール工業株式会社 Plasma generator for exhaust gas decomposition treatment
JP3962297B2 (en) 2002-08-05 2007-08-22 株式会社ダイヘン Microwave power supply system
JP3641785B2 (en) 2002-08-09 2005-04-27 株式会社京三製作所 Power supply for plasma generation
JP2004205328A (en) * 2002-12-25 2004-07-22 Daihen Corp High-frequency power supply device
US7115185B1 (en) * 2003-09-16 2006-10-03 Advanced Energy Industries, Inc. Pulsed excitation of inductively coupled plasma sources
JP2005136933A (en) 2003-10-31 2005-05-26 Hitachi Hybrid Network Co Ltd Automatic gain control device
JP4624686B2 (en) * 2004-01-15 2011-02-02 株式会社ダイヘン High frequency power supply
KR100710509B1 (en) * 2006-04-11 2007-04-25 남상욱 High Efficiency Linear Power Amplifier System Using Pulsed Area Modulation
WO2009118920A1 (en) * 2008-03-26 2009-10-01 株式会社京三製作所 Abnormal discharge suppressing device for vacuum apparatus
KR101124419B1 (en) * 2009-02-18 2012-03-20 포항공과대학교 산학협력단 Portable power module for microwave excited microplasmas
WO2011016266A1 (en) * 2009-08-07 2011-02-10 株式会社京三製作所 Pulse-modulated high-frequency power control method and pulse-modulated high-frequency power source device
JP5691081B2 (en) * 2010-04-02 2015-04-01 株式会社アルバック Deposition equipment

Also Published As

Publication number Publication date
EP2833703B1 (en) 2017-04-19
CN104322154A (en) 2015-01-28
CN104322154B (en) 2015-11-25
TW201401937A (en) 2014-01-01
JP5534365B2 (en) 2014-06-25
DE13807713T1 (en) 2015-05-21
KR20140147158A (en) 2014-12-29
TWI472270B (en) 2015-02-01
KR101523484B1 (en) 2015-05-27
IN2014KN02415A (en) 2015-05-01
EP2833703A1 (en) 2015-02-04
WO2013190987A1 (en) 2013-12-27
US20150084509A1 (en) 2015-03-26
EP2833703A4 (en) 2015-09-23
US9070537B2 (en) 2015-06-30
JP2014002898A (en) 2014-01-09

Similar Documents

Publication Publication Date Title
PL2833703T3 (en) High-frequency power supply device and reflected wave power control method
EP2670015A4 (en) Power control device and power control method
PL2833702T3 (en) High-frequency power supply device and ignition voltage selection method
GB2514731B (en) Methods and apparatus for saving power
EP2691827A4 (en) Power control manager and method
ZA201306340B (en) Wave power generating apparatus
GB2499570B (en) Power supply apparatus and method
SG11201509041PA (en) Method and apparatus for controlling power delivered by electrosurgical probe
EP3040804A4 (en) Electronic device for controlling power and method therefor
EP2903353A4 (en) Power adjustment method and device
EP3020108A4 (en) Apparatuses and methods for controlling power to electronic devices
EP2671303A2 (en) Method and apparatus for managing power of smart appliance
GB2511448B (en) Power transmission device and power transmission control method
EP3024299A4 (en) High-frequency heating device and power supply control method and power supply control apparatus for same
EP2744275A4 (en) Method and device for power saving
GB201412640D0 (en) Power transmission device and power transmission control method
EP2922595A4 (en) Weak power supply operation and control
GB2508780B (en) Power supply device and control method therefor
EP2850875A4 (en) Method and apparatus for energy saving
GB2510238B (en) Power converter and its control method
EP2732849A4 (en) Cosmetic device using high-frequency waves
PT3092404T (en) Belt drive wave energy plant
EP2717410A4 (en) Power control device and power control method
SG11201501480YA (en) Wireless power transmission device and method for controlling power supply for wireless power transmission device
EP3057227A4 (en) Power supply frequency determination device and power supply frequency determination method