PL2846334T3 - Sposób wytwarzania wielowarstwowego urządzenia magnetoelektronicznego i urządzenie magnetoelektroniczne - Google Patents

Sposób wytwarzania wielowarstwowego urządzenia magnetoelektronicznego i urządzenie magnetoelektroniczne

Info

Publication number
PL2846334T3
PL2846334T3 PL13183166T PL13183166T PL2846334T3 PL 2846334 T3 PL2846334 T3 PL 2846334T3 PL 13183166 T PL13183166 T PL 13183166T PL 13183166 T PL13183166 T PL 13183166T PL 2846334 T3 PL2846334 T3 PL 2846334T3
Authority
PL
Poland
Prior art keywords
magnetoelectronic device
producing
multilayer
magnetoelectronic
multilayer magnetoelectronic
Prior art date
Application number
PL13183166T
Other languages
English (en)
Inventor
Kai Schlage
Denise Erb
Ralf Röhlsberger
Hans-Christian Wille
Daniel Schumacher
Lars Bocklage
Original Assignee
Deutsches Elektronen-Synchrotron Desy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsches Elektronen-Synchrotron Desy filed Critical Deutsches Elektronen-Synchrotron Desy
Publication of PL2846334T3 publication Critical patent/PL2846334T3/pl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/85Coating a support with a magnetic layer by vapour deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/01Manufacture or treatment
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/11Magnetic recording head
    • Y10T428/1107Magnetoresistive
    • Y10T428/1121Multilayer
    • Y10T428/1129Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Vapour Deposition (AREA)
PL13183166T 2013-09-05 2013-09-05 Sposób wytwarzania wielowarstwowego urządzenia magnetoelektronicznego i urządzenie magnetoelektroniczne PL2846334T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP13183166.1A EP2846334B1 (en) 2013-09-05 2013-09-05 Method of producing a multilayer magnetoelectronic device and magnetoelectronic device

Publications (1)

Publication Number Publication Date
PL2846334T3 true PL2846334T3 (pl) 2018-04-30

Family

ID=49111032

Family Applications (1)

Application Number Title Priority Date Filing Date
PL13183166T PL2846334T3 (pl) 2013-09-05 2013-09-05 Sposób wytwarzania wielowarstwowego urządzenia magnetoelektronicznego i urządzenie magnetoelektroniczne

Country Status (6)

Country Link
US (2) US9928860B2 (pl)
EP (1) EP2846334B1 (pl)
JP (1) JP6526008B2 (pl)
ES (1) ES2658984T3 (pl)
PL (1) PL2846334T3 (pl)
WO (1) WO2015032925A2 (pl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2658984T3 (es) * 2013-09-05 2018-03-13 Deutsches Elektronen-Synchrotron Desy Método de producción de un dispositivo magneto-electrónico multicapa y dispositivo magneto-electrónico
US9349391B2 (en) * 2013-12-04 2016-05-24 HGST Netherlands B.V. Controlling magnetic layer anisotropy field by oblique angle static deposition
FR3027453B1 (fr) * 2014-10-20 2017-11-24 Commissariat Energie Atomique Dispositif resistif pour circuit memoire ou logique et procede de fabrication d'un tel dispositif
US11280855B2 (en) * 2019-07-29 2022-03-22 Nxp B.V. Magnetic field sensor, system, and oblique incident deposition fabrication method

Family Cites Families (18)

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JPH05114530A (ja) * 1991-10-23 1993-05-07 Matsushita Electric Ind Co Ltd 軟磁性合金膜の製造方法および磁気ヘツドの製造方法
JP2001273611A (ja) * 2000-03-28 2001-10-05 Alps Electric Co Ltd 薄膜磁気ヘッド
DE10128262A1 (de) * 2001-06-11 2002-12-19 Siemens Ag Magnetoresistives Sensorsystem
EP2808869A3 (en) * 2001-08-29 2014-12-17 Lambeth Magnetic Structures, LLC Magnetic material structures, devices and methods
US6818961B1 (en) * 2003-06-30 2004-11-16 Freescale Semiconductor, Inc. Oblique deposition to induce magnetic anisotropy for MRAM cells
DE102004047411B3 (de) * 2004-09-28 2006-05-11 Funktionale Materialien Rostock E.V. Magnetisches Speicherschichtsystem
US6992910B1 (en) * 2004-11-18 2006-01-31 Maglabs, Inc. Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell
US7903452B2 (en) * 2006-06-23 2011-03-08 Qimonda Ag Magnetoresistive memory cell
JP4738395B2 (ja) * 2007-09-25 2011-08-03 株式会社東芝 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JPWO2009154009A1 (ja) * 2008-06-20 2011-11-24 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法、スパッタ成膜チャンバー、スパッタ成膜チャンバーを有する磁気抵抗素子の製造装置、プログラム、記憶媒体
US7936598B2 (en) * 2009-04-28 2011-05-03 Seagate Technology Magnetic stack having assist layer
JP2010144247A (ja) * 2009-06-17 2010-07-01 Canon Anelva Corp スパッタリング装置および成膜方法
US8159866B2 (en) * 2009-10-30 2012-04-17 Grandis, Inc. Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
GB201015497D0 (en) * 2010-09-16 2010-10-27 Cambridge Entpr Ltd Magnetic data storage
US8755154B2 (en) * 2011-09-13 2014-06-17 Seagate Technology Llc Tuned angled uniaxial anisotropy in trilayer magnetic sensors
JP5982794B2 (ja) * 2011-11-30 2016-08-31 ソニー株式会社 記憶素子、記憶装置
US8816456B2 (en) * 2011-12-21 2014-08-26 Agency For Science, Technology And Research Magnetoresistive device and a method of forming the same
ES2658984T3 (es) * 2013-09-05 2018-03-13 Deutsches Elektronen-Synchrotron Desy Método de producción de un dispositivo magneto-electrónico multicapa y dispositivo magneto-electrónico

Also Published As

Publication number Publication date
US9928860B2 (en) 2018-03-27
JP2016536799A (ja) 2016-11-24
US11170805B2 (en) 2021-11-09
US20180174604A1 (en) 2018-06-21
ES2658984T3 (es) 2018-03-13
US20150064499A1 (en) 2015-03-05
JP6526008B2 (ja) 2019-06-05
WO2015032925A3 (en) 2015-06-25
WO2015032925A2 (en) 2015-03-12
EP2846334B1 (en) 2017-11-08
EP2846334A1 (en) 2015-03-11

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