PL2856498T3 - Susceptor - Google Patents

Susceptor

Info

Publication number
PL2856498T3
PL2856498T3 PL13727130T PL13727130T PL2856498T3 PL 2856498 T3 PL2856498 T3 PL 2856498T3 PL 13727130 T PL13727130 T PL 13727130T PL 13727130 T PL13727130 T PL 13727130T PL 2856498 T3 PL2856498 T3 PL 2856498T3
Authority
PL
Poland
Prior art keywords
susceptor
Prior art date
Application number
PL13727130T
Other languages
English (en)
Inventor
Torsten Kornmeyer
Meinhard Wisskirchen
Steffen Still
Original Assignee
Kgt Graphit Tech Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kgt Graphit Tech Gmbh filed Critical Kgt Graphit Tech Gmbh
Publication of PL2856498T3 publication Critical patent/PL2856498T3/pl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/19Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
    • H10P72/1922Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by the construction of the closed carrier
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00Means for manipulating or holding work, e.g. for separate articles
    • B05C13/02Means for manipulating or holding work, e.g. for separate articles for particular articles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Ceramic Products (AREA)
  • Gasket Seals (AREA)
PL13727130T 2012-06-01 2013-06-03 Susceptor PL2856498T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012209278.1A DE102012209278B4 (de) 2012-06-01 2012-06-01 Suszeptor
EP13727130.0A EP2856498B1 (de) 2012-06-01 2013-06-03 Suszeptor
PCT/EP2013/061384 WO2013178824A1 (de) 2012-06-01 2013-06-03 Suszeptor

Publications (1)

Publication Number Publication Date
PL2856498T3 true PL2856498T3 (pl) 2019-05-31

Family

ID=48577008

Family Applications (1)

Application Number Title Priority Date Filing Date
PL13727130T PL2856498T3 (pl) 2012-06-01 2013-06-03 Susceptor

Country Status (7)

Country Link
US (1) US10094016B2 (pl)
EP (1) EP2856498B1 (pl)
CN (1) CN104380451B (pl)
DE (1) DE102012209278B4 (pl)
DK (1) DK2856498T3 (pl)
PL (1) PL2856498T3 (pl)
WO (1) WO2013178824A1 (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202015103154U1 (de) 2015-06-16 2016-01-14 Graphite Materials GmbH Suszeptor

Family Cites Families (32)

* Cited by examiner, † Cited by third party
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US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
US4117252A (en) * 1976-12-01 1978-09-26 Mcmaster Harold High temperature furnace
US4152533A (en) * 1978-04-27 1979-05-01 Great Lakes Carbon Corporation Electrode joint
US4290709A (en) * 1979-09-28 1981-09-22 Union Carbide Corporation High taper angle connecting pin for graphite electrode joints
JPS56155528A (en) * 1980-05-02 1981-12-01 Toshiba Corp Method of diffusing impurity into semiconductor substrate
US4571910A (en) * 1983-08-01 1986-02-25 Edward Cosentino Apparatus for laying tile
US4523531A (en) * 1984-02-22 1985-06-18 Kennecott Corporation Modular furnace lining having mechanically interlocking attachment means
US4755658A (en) * 1985-11-12 1988-07-05 Ultra Carbon Corporation Segmented heater system
US4703556A (en) * 1985-11-12 1987-11-03 Ultra Carbon Corporation Method of making a segmented heater system
DE3719045A1 (de) * 1987-06-06 1988-12-15 Degussa Halterungselemente aus graphit fuer heizstaebe in industrieoefen
JPH01123991A (ja) * 1987-11-09 1989-05-16 Nikkiso Co Ltd 内熱式高温高圧装置の断熱構造体
US5014478A (en) * 1989-09-22 1991-05-14 Insulated Panel Systems, Inc. Panels and panel interlocking means
DE59304685D1 (de) * 1992-04-03 1997-01-16 Siemens Ag Gasdichte schutzwand
JPH0682634B2 (ja) 1992-07-27 1994-10-19 東京エレクトロン東北株式会社 バッチプラズマ装置
US5414927A (en) * 1993-03-30 1995-05-16 Union Oil Co Furnace elements made from graphite sheets
JP2566529B2 (ja) * 1994-01-31 1996-12-25 日本ピラー工業株式会社 シート状ガスケット
US6582178B2 (en) * 2000-08-14 2003-06-24 Daniel G. Petruccelli Mini-modual manufacturing environmental
DE10243196B4 (de) * 2002-09-18 2007-03-22 Kaindl Flooring Gmbh Paneele mit Verbindungsklammer
ITMI20022225A1 (it) * 2002-10-18 2004-04-19 Terzi Stampi Di Terzi Dario & C S N C Struttura modulare per il contenimento di oggetti fluidi o persone in stato di quiete o movimento
DE10302653A1 (de) 2003-01-20 2004-08-19 Htm Reetz Gmbh Vorrichtung zur Thermomigration
JP3940095B2 (ja) * 2003-05-08 2007-07-04 忠弘 大見 基板処理装置
US7789660B2 (en) * 2005-12-07 2010-09-07 Ajax Tocco Magnethermic Corporation Furnace alignment system
FR2909799A1 (fr) 2006-12-12 2008-06-13 Commissariat Energie Atomique Procede et fabrication d'elements de combustible nucleaire et contenant pour la mise en oeuvre d'un tel procede
US20080232424A1 (en) * 2007-03-23 2008-09-25 Honeywell International Inc. Hearth plate including side walls defining a processing volume
WO2008142747A1 (ja) * 2007-05-16 2008-11-27 Canon Anelva Corporation 加熱処理装置
DE102009043848A1 (de) * 2009-08-25 2011-03-03 Aixtron Ag CVD-Verfahren und CVD-Reaktor
US8429870B2 (en) * 2009-12-04 2013-04-30 Mannington Mills, Inc. Connecting system for surface coverings
US8683697B2 (en) * 2010-04-26 2014-04-01 Lockheed Martin Corporation Large scale structures
US9010067B2 (en) * 2011-04-14 2015-04-21 Geoffrey Alan Baker Fabricating the locking steps in the groove element of spring-loaded split-tongue locking connector system
CA2759147A1 (en) * 2011-11-16 2012-05-17 Magnetic Energy Services Inc. Fluid storage tank assembly
JP2013220954A (ja) * 2012-04-13 2013-10-28 Ibiden Co Ltd 黒鉛ヒータ
WO2014164743A1 (en) * 2013-03-11 2014-10-09 Applied Materials, Inc. High temperature process chamber lid

Also Published As

Publication number Publication date
CN104380451B (zh) 2017-06-06
DE102012209278A1 (de) 2013-12-05
DE102012209278B4 (de) 2018-04-12
WO2013178824A1 (de) 2013-12-05
CN104380451A (zh) 2015-02-25
US20150144057A1 (en) 2015-05-28
EP2856498B1 (de) 2018-11-14
US10094016B2 (en) 2018-10-09
EP2856498A1 (de) 2015-04-08
DK2856498T3 (en) 2019-03-18

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