PL2940782T3 - Półprzewodnikowy przełącznik diodowy - Google Patents

Półprzewodnikowy przełącznik diodowy

Info

Publication number
PL2940782T3
PL2940782T3 PL15164954T PL15164954T PL2940782T3 PL 2940782 T3 PL2940782 T3 PL 2940782T3 PL 15164954 T PL15164954 T PL 15164954T PL 15164954 T PL15164954 T PL 15164954T PL 2940782 T3 PL2940782 T3 PL 2940782T3
Authority
PL
Poland
Prior art keywords
semiconductor diode
diode switch
switch
semiconductor
diode
Prior art date
Application number
PL15164954T
Other languages
English (en)
Inventor
Esa Purkunen
Original Assignee
Bittium Wireless Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bittium Wireless Oy filed Critical Bittium Wireless Oy
Publication of PL2940782T3 publication Critical patent/PL2940782T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H03K17/76—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
PL15164954T 2014-04-29 2015-04-24 Półprzewodnikowy przełącznik diodowy PL2940782T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20145395 2014-04-29
EP15164954.8A EP2940782B1 (en) 2014-04-29 2015-04-24 Semiconductor diode switch

Publications (1)

Publication Number Publication Date
PL2940782T3 true PL2940782T3 (pl) 2020-09-21

Family

ID=53002566

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15164954T PL2940782T3 (pl) 2014-04-29 2015-04-24 Półprzewodnikowy przełącznik diodowy

Country Status (3)

Country Link
EP (1) EP2940782B1 (pl)
ES (1) ES2803554T3 (pl)
PL (1) PL2940782T3 (pl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113169169A (zh) 2018-12-03 2021-07-23 镁可微波技术有限公司 具有多厚度本征区的pin二极管
EP3925002A1 (en) 2019-02-12 2021-12-22 MACOM Technology Solutions Holdings, Inc. Monolithic multi-i region diode limiters
EP3931964B1 (en) * 2019-02-28 2024-12-04 MACOM Technology Solutions Holdings, Inc. Monolithic multi-i region diode switches
CN110138394A (zh) * 2019-06-28 2019-08-16 京信通信系统（中国）有限公司 一种信号收发装置与终端
CN111342180B (zh) * 2020-03-09 2021-08-10 南京航空航天大学 二进制式带宽可重构的并联短截线带通滤波器
CN113285697B (zh) * 2021-05-31 2023-04-18 电子科技大学 一种匹配可重构的超宽带单刀多掷射频开关

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1427115A1 (en) * 2002-12-06 2004-06-09 TDK Corporation Antenna switching circuit
JP4518776B2 (ja) * 2003-10-29 2010-08-04 三菱電機株式会社 高周波スイッチおよび高周波スイッチ装置
US7893791B2 (en) * 2008-10-22 2011-02-22 The Boeing Company Gallium nitride switch methodology
JP2011234110A (ja) * 2010-04-27 2011-11-17 Mitsubishi Electric Corp 高周波回路

Also Published As

Publication number Publication date
EP2940782A1 (en) 2015-11-04
ES2803554T3 (es) 2021-01-27
EP2940782B1 (en) 2020-06-03

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