PL2997603T3 - Konglomerat komórek nanostrukturalnych, system tworzący metamateriał w krzemie oraz proces jego wytwarzania i rozlokowania w odpowiedniej przestrzeni - Google Patents

Konglomerat komórek nanostrukturalnych, system tworzący metamateriał w krzemie oraz proces jego wytwarzania i rozlokowania w odpowiedniej przestrzeni

Info

Publication number
PL2997603T3
PL2997603T3 PL14795863T PL14795863T PL2997603T3 PL 2997603 T3 PL2997603 T3 PL 2997603T3 PL 14795863 T PL14795863 T PL 14795863T PL 14795863 T PL14795863 T PL 14795863T PL 2997603 T3 PL2997603 T3 PL 2997603T3
Authority
PL
Poland
Prior art keywords
metamaterial
grouped
arrange
silicon
manufacturing process
Prior art date
Application number
PL14795863T
Other languages
English (en)
Inventor
Zbigniew KUZNICKI
Patrick Meyrueis
Original Assignee
Segton Advanced Technology Sas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Segton Advanced Technology Sas filed Critical Segton Advanced Technology Sas
Publication of PL2997603T3 publication Critical patent/PL2997603T3/pl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H10F77/1465—Superlattices; Multiple quantum well structures including only Group IV materials, e.g. Si-SiGe superlattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL14795863T 2013-05-14 2014-05-13 Konglomerat komórek nanostrukturalnych, system tworzący metamateriał w krzemie oraz proces jego wytwarzania i rozlokowania w odpowiedniej przestrzeni PL2997603T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361855342P 2013-05-14 2013-05-14
PCT/IB2014/002019 WO2014203081A2 (en) 2013-05-14 2014-05-13 Grouped nanostructured units system forming a metamaterial within the silicon and the manufacturing process to form and arrange them therein
EP14795863.1A EP2997603B1 (en) 2013-05-14 2014-05-13 Grouped nanostructured units system forming a metamaterial within the silicon and the manufacturing process to form and arrange them therein

Publications (1)

Publication Number Publication Date
PL2997603T3 true PL2997603T3 (pl) 2020-12-28

Family

ID=51862632

Family Applications (1)

Application Number Title Priority Date Filing Date
PL14795863T PL2997603T3 (pl) 2013-05-14 2014-05-13 Konglomerat komórek nanostrukturalnych, system tworzący metamateriał w krzemie oraz proces jego wytwarzania i rozlokowania w odpowiedniej przestrzeni

Country Status (10)

Country Link
US (1) US10886422B2 (pl)
EP (1) EP2997603B1 (pl)
CN (1) CN105431950B (pl)
DK (1) DK2997603T3 (pl)
ES (1) ES2820539T3 (pl)
FR (1) FR3005789A1 (pl)
HU (1) HUE051331T2 (pl)
LT (1) LT2997603T (pl)
PL (1) PL2997603T3 (pl)
WO (1) WO2014203081A2 (pl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018220447A2 (en) * 2017-06-01 2018-12-06 Segton Advanced Technologie Sas Improved process for manufacturing a crystalline metamaterial within a silicon light-to-electricity converter
FR3067169B1 (fr) * 2017-06-01 2021-09-24 Segton Advanced Tech Procede ameliore de fabrication d'un metamateriau a l'interieur d'un convertisseur lumiere-electricite en silinium
FR3081081B1 (fr) * 2018-05-14 2020-10-09 Segton Advanced Tech Procede d'amorphisation pour creer industriellement un metamateriau a photoconversion geante dans un convertisseur lumiere-electricite tout en silicium
FR3067168A1 (fr) * 2017-06-01 2018-12-07 Segton Advanced Technology Procede de fabrication d'un convertisseur lumiere-electricite tout en silicium pour une photoconversion geante
CN108550656B (zh) * 2018-05-17 2023-11-21 苏州晶洲装备科技有限公司 一种电注入均衡退火装置
CN118136720B (zh) * 2024-01-12 2025-09-19 北京理工大学 金属异质结构中通过可控电声耦合调控热电子传输的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485544B2 (en) * 2006-08-02 2009-02-03 Micron Technology, Inc. Strained semiconductor, devices and systems and methods of formation
US20090227061A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Establishing a high phosphorus concentration in solar cells
ES2880800T3 (es) * 2009-02-06 2021-11-25 Segton Advanced Tech Métodos para producir material fotovoltaico capaz de sacar provecho de fotones de alta energía
CN101777592B (zh) * 2010-01-19 2011-06-15 浙江大学 基于重掺umg硅外延生成高低结的太阳电池及制备方法
TW201128787A (en) 2010-02-12 2011-08-16 A2Peak Power Co Ltd Solar module and manufacture method thereof
CN103503158B (zh) 2011-03-25 2017-07-14 赛腾高新技术公司 用于光伏转换器的基于有机硅成份的改进的发射极结构以及制造所述光伏装置的方法
FR3005790A1 (fr) 2013-05-14 2014-11-21 Segton Advanced Technology Elements nanostructures formes a l'interieur d'un materiau silicium et procede de fabrication pour les realiser

Also Published As

Publication number Publication date
WO2014203081A3 (en) 2015-04-16
HUE051331T2 (hu) 2021-03-01
US10886422B2 (en) 2021-01-05
EP2997603A2 (en) 2016-03-23
WO2014203081A4 (en) 2015-06-11
FR3005789A1 (fr) 2014-11-21
US20160118517A1 (en) 2016-04-28
DK2997603T3 (da) 2020-09-14
LT2997603T (lt) 2020-12-10
ES2820539T3 (es) 2021-04-21
CN105431950B (zh) 2019-04-30
CN105431950A (zh) 2016-03-23
EP2997603B1 (en) 2020-07-08
WO2014203081A2 (en) 2014-12-24

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