PL3195344T3 - Aparat i sposób osadzania z zastosowaniem wirtualnej katody (VCD) do wytwarzania cienkich warstw - Google Patents

Aparat i sposób osadzania z zastosowaniem wirtualnej katody (VCD) do wytwarzania cienkich warstw

Info

Publication number
PL3195344T3
PL3195344T3 PL15794291T PL15794291T PL3195344T3 PL 3195344 T3 PL3195344 T3 PL 3195344T3 PL 15794291 T PL15794291 T PL 15794291T PL 15794291 T PL15794291 T PL 15794291T PL 3195344 T3 PL3195344 T3 PL 3195344T3
Authority
PL
Poland
Prior art keywords
vcd
thin films
deposition apparatus
producing thin
virtual cathode
Prior art date
Application number
PL15794291T
Other languages
English (en)
Inventor
Dmitry YARMOLICH
Original Assignee
Plasma App Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plasma App Ltd. filed Critical Plasma App Ltd.
Publication of PL3195344T3 publication Critical patent/PL3195344T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/077—Electron guns using discharge in gases or vapours as electron sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/025—Hollow cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06366—Gas discharge electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating
    • H01J2237/3137—Plasma-assisted co-operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/025—Electron guns using a discharge in a gas or a vapour as electron source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Carbon And Carbon Compounds (AREA)
PL15794291T 2014-09-18 2015-09-18 Aparat i sposób osadzania z zastosowaniem wirtualnej katody (VCD) do wytwarzania cienkich warstw PL3195344T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1416497.4A GB2528141B (en) 2014-09-18 2014-09-18 Virtual cathode deposition (VCD) for thin film manufacturing
PCT/IB2015/057205 WO2016042530A1 (en) 2014-09-18 2015-09-18 Virtual cathode deposition (vcd) for thin film manufacturing
EP15794291.3A EP3195344B1 (en) 2014-09-18 2015-09-18 Apparatus and method for virtual cathode deposition (vcd) for thin film manufacturing

Publications (1)

Publication Number Publication Date
PL3195344T3 true PL3195344T3 (pl) 2021-04-06

Family

ID=51869107

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15794291T PL3195344T3 (pl) 2014-09-18 2015-09-18 Aparat i sposób osadzania z zastosowaniem wirtualnej katody (VCD) do wytwarzania cienkich warstw

Country Status (8)

Country Link
US (1) US10047432B2 (pl)
EP (1) EP3195344B1 (pl)
JP (1) JP6491752B2 (pl)
KR (1) KR102268021B1 (pl)
CN (1) CN107231818B (pl)
GB (1) GB2528141B (pl)
PL (1) PL3195344T3 (pl)
WO (1) WO2016042530A1 (pl)

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CZ2016603A3 (cs) * 2016-09-27 2017-10-25 Fyzikální ústav AV ČR, v.v.i. Způsob řízení rychlosti depozice tenkých vrstev ve vakuovém vícetryskovém plazmovém systému a zařízení k provádění tohoto způsobu
US10600611B2 (en) 2017-12-12 2020-03-24 Applied Materials, Inc. Ion source crucible for solid feed materials
US11404254B2 (en) * 2018-09-19 2022-08-02 Varian Semiconductor Equipment Associates, Inc. Insertable target holder for solid dopant materials
GB2585621B (en) * 2018-09-24 2022-11-16 Plasma App Ltd Carbon materials
EP3942631A1 (en) 2019-03-20 2022-01-26 FMC Lithium USA Corp. Battery utilizing printable lithium
US11170973B2 (en) 2019-10-09 2021-11-09 Applied Materials, Inc. Temperature control for insertable target holder for solid dopant materials
US10957509B1 (en) 2019-11-07 2021-03-23 Applied Materials, Inc. Insertable target holder for improved stability and performance for solid dopant materials
US11923535B2 (en) 2020-02-19 2024-03-05 Livent USA Corp. Fast charging pre-lithiated silicon anode
GB202106834D0 (en) 2021-05-13 2021-06-30 Dupont Teijin Films Us Lp Metallised films
US11854760B2 (en) 2021-06-21 2023-12-26 Applied Materials, Inc. Crucible design for liquid metal in an ion source
GB202115792D0 (en) 2021-11-03 2021-12-15 Dupont Teijin Films Us Lp Metallised films
CN114059022B (zh) * 2021-11-09 2022-10-25 西安交通大学 一种设置空心阴极等离子体的pld系统及薄膜的制备方法

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US4039416A (en) * 1975-04-21 1977-08-02 White Gerald W Gasless ion plating
KR20020067710A (ko) * 2001-02-17 2002-08-24 한국과학기술연구원 전자기파 차폐용 금속박막 증착장치 및 그 방법
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
DE10207835C1 (de) * 2002-02-25 2003-06-12 Karlsruhe Forschzent Kanalfunkenquelle zur Erzeugung eines stabil gebündelten Elektronenstrahls
JP2011529612A (ja) * 2008-07-31 2011-12-08 ジッドテック ピーティーワイ エルティーディ 中性粒子発生器
IT1395701B1 (it) * 2009-03-23 2012-10-19 Organic Spintronics S R L Dispositivo per la generazione di plasma e per dirigere un flusso di elettroni verso un bersaglio
IT1401417B1 (it) 2010-08-23 2013-07-26 Organic Spintronics S R L Dispositivo per la generazione di plasma e per dirigere un flusso di elettroni verso un bersaglio
KR20130025224A (ko) * 2011-09-01 2013-03-11 한국기계연구원 고밀도 플라즈마를 이용한 증착 장치 및 방법
ITBO20120320A1 (it) * 2012-06-11 2013-12-12 Libuse Skocdopolova Un apparato ed un metodo per la grenerazione di elettroni e di plasma da un getto di gas
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US9593227B2 (en) 2012-12-21 2017-03-14 Zeon Corporation Rubber composition and molded product

Also Published As

Publication number Publication date
GB2528141B (en) 2016-10-05
GB2528141A (en) 2016-01-13
JP2017534765A (ja) 2017-11-24
EP3195344B1 (en) 2020-08-26
US20170247789A1 (en) 2017-08-31
CN107231818A (zh) 2017-10-03
WO2016042530A1 (en) 2016-03-24
US10047432B2 (en) 2018-08-14
CN107231818B (zh) 2018-12-07
GB201416497D0 (en) 2014-11-05
KR20170058397A (ko) 2017-05-26
JP6491752B2 (ja) 2019-03-27
EP3195344A1 (en) 2017-07-26
KR102268021B1 (ko) 2021-06-21

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