PL3237894T3 - Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą - Google Patents
Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącąInfo
- Publication number
- PL3237894T3 PL3237894T3 PL15825860T PL15825860T PL3237894T3 PL 3237894 T3 PL3237894 T3 PL 3237894T3 PL 15825860 T PL15825860 T PL 15825860T PL 15825860 T PL15825860 T PL 15825860T PL 3237894 T3 PL3237894 T3 PL 3237894T3
- Authority
- PL
- Poland
- Prior art keywords
- manufacturing
- conductive layer
- metal substrate
- dielectric coating
- base containing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IB2014/067309 WO2016103007A1 (fr) | 2014-12-24 | 2014-12-24 | Procédé de contrôle d'un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice |
| EP15825860.8A EP3237894B1 (fr) | 2014-12-24 | 2015-12-23 | Procédé de fabrication d'un module optoélectronique ayant un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice |
| PCT/IB2015/059922 WO2016103206A1 (fr) | 2014-12-24 | 2015-12-23 | Procédé de fabrication d'un module optoélectronique ayant un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3237894T3 true PL3237894T3 (pl) | 2020-07-27 |
Family
ID=52462356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL15825860T PL3237894T3 (pl) | 2014-12-24 | 2015-12-23 | Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US10283420B2 (pl) |
| EP (1) | EP3237894B1 (pl) |
| KR (1) | KR102545862B1 (pl) |
| CN (1) | CN107250778B (pl) |
| AU (1) | AU2015370408B2 (pl) |
| CA (1) | CA2971662C (pl) |
| DK (1) | DK3237894T3 (pl) |
| ES (1) | ES2775479T3 (pl) |
| HR (1) | HRP20200304T1 (pl) |
| HU (1) | HUE050323T2 (pl) |
| PL (1) | PL3237894T3 (pl) |
| PT (1) | PT3237894T (pl) |
| WO (2) | WO2016103007A1 (pl) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10276455B2 (en) * | 2016-07-29 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for measurement of semiconductor device fabrication tool implement |
| JP6907951B2 (ja) * | 2018-01-11 | 2021-07-21 | トヨタ自動車株式会社 | ヒートシンクの検査方法、検査装置及び生産方法、生産システム |
| DE102019112238A1 (de) * | 2019-05-10 | 2020-11-12 | HELLA GmbH & Co. KGaA | Verfahren zur Kontrolle der Beschichtung eines elektronischen Bauteils |
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| TW501290B (en) * | 1999-07-23 | 2002-09-01 | Telcordia Tech Inc | Infrared thermographic method for process monitoring and control of multilayer conductive compositions |
| US6317216B1 (en) * | 1999-12-13 | 2001-11-13 | Brown University Research Foundation | Optical method for the determination of grain orientation in films |
| JP2001326375A (ja) * | 2000-03-10 | 2001-11-22 | Sanyo Electric Co Ltd | 太陽光発電システムの診断方法及び診断装置 |
| US8462350B2 (en) * | 2001-12-06 | 2013-06-11 | Attofemto, Inc. | Optically enhanced holographic interferometric testing methods for the development and evaluation of semiconductor devices, materials, wafers, and for monitoring all phases of development and manufacture |
| US20050252545A1 (en) * | 2004-05-12 | 2005-11-17 | Spire Corporation | Infrared detection of solar cell defects under forward bias |
| WO2007005636A2 (en) * | 2005-06-30 | 2007-01-11 | Controlled Semiconductor, Inc. | Semiconductor failure analysis tool |
| EP1905108A2 (en) * | 2005-06-30 | 2008-04-02 | Koninklijke Philips Electronics N.V. | Method for reducing occurrence of short-circuit failure in an organic functional device |
| DE102005040010A1 (de) * | 2005-08-23 | 2007-03-15 | Rwe Schott Solar Gmbh | Verfahren und Vorrichtung zur Ermittlung von Produktionsfehlern in einem Halbleiterbau-element |
| US7910822B1 (en) * | 2005-10-17 | 2011-03-22 | Solaria Corporation | Fabrication process for photovoltaic cell |
| US7847237B2 (en) * | 2006-05-02 | 2010-12-07 | National University Corporation Nara | Method and apparatus for testing and evaluating performance of a solar cell |
| CN103185854B (zh) * | 2006-05-05 | 2015-07-01 | Bt成像股份有限公司 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
| US8300227B2 (en) * | 2008-02-13 | 2012-10-30 | Xitronix Corporation | Method and apparatus of z-scan photoreflectance characterization |
| US7989729B1 (en) * | 2008-03-11 | 2011-08-02 | Kla-Tencor Corporation | Detecting and repairing defects of photovoltaic devices |
| TW200940977A (en) * | 2008-03-19 | 2009-10-01 | Viswell Technology Co Ltd | Optical imaging apparatus and method for inspection of solar cells |
| SG158787A1 (en) * | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Apparatus for detecting micro-cracks in wafers and method therefor |
| SG158782A1 (en) * | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Method and system for detecting micro-cracks in wafers |
| TW201013963A (en) * | 2008-08-15 | 2010-04-01 | Ulvac Inc | Method and apparatus for manufacturing solar battery |
| US7979969B2 (en) * | 2008-11-17 | 2011-07-19 | Solopower, Inc. | Method of detecting and passivating a defect in a solar cell |
| DE102009021799A1 (de) * | 2009-05-18 | 2010-11-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur ortsaufgelösten Bestimmung des Serienwiderstandes einer Halbleiterstruktur |
| WO2011016441A1 (ja) * | 2009-08-04 | 2011-02-10 | 国立大学法人奈良先端科学技術大学院大学 | 太陽電池の評価方法、評価装置、メンテナンス方法、メンテナンスシステム、および太陽電池モジュールの製造方法 |
| US8940556B2 (en) * | 2010-03-01 | 2015-01-27 | First Solar, Inc | Electrical bias methods and apparatus for photovoltaic device manufacture |
| JP5319593B2 (ja) * | 2010-04-09 | 2013-10-16 | 日清紡メカトロニクス株式会社 | 太陽電池の検査方法および検査装置 |
| US20110282600A1 (en) * | 2010-05-12 | 2011-11-17 | General Electric Company | System and method for photovoltaic plant power curve measurement and health monitoring |
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| US8766192B2 (en) * | 2010-11-01 | 2014-07-01 | Asm Assembly Automation Ltd | Method for inspecting a photovoltaic substrate |
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| JP6418542B2 (ja) * | 2013-12-10 | 2018-11-07 | 株式会社Screenホールディングス | 検査装置および検査方法 |
| JP6395205B2 (ja) * | 2014-02-18 | 2018-09-26 | 株式会社Screenホールディングス | 検査装置及び検査方法 |
| US20160158890A1 (en) * | 2014-12-05 | 2016-06-09 | Solarcity Corporation | Systems and methods for scribing photovoltaic structures |
| ES2745982T3 (es) * | 2014-12-17 | 2020-03-04 | Abb Schweiz Ag | Inspección de un panel solar con un vehículo aéreo no tripulado |
-
2014
- 2014-12-24 WO PCT/IB2014/067309 patent/WO2016103007A1/fr not_active Ceased
-
2015
- 2015-12-23 ES ES15825860T patent/ES2775479T3/es active Active
- 2015-12-23 PT PT158258608T patent/PT3237894T/pt unknown
- 2015-12-23 US US15/537,662 patent/US10283420B2/en active Active
- 2015-12-23 WO PCT/IB2015/059922 patent/WO2016103206A1/fr not_active Ceased
- 2015-12-23 CA CA2971662A patent/CA2971662C/fr active Active
- 2015-12-23 DK DK15825860.8T patent/DK3237894T3/da active
- 2015-12-23 AU AU2015370408A patent/AU2015370408B2/en active Active
- 2015-12-23 HR HRP20200304TT patent/HRP20200304T1/hr unknown
- 2015-12-23 KR KR1020177017365A patent/KR102545862B1/ko active Active
- 2015-12-23 CN CN201580070740.5A patent/CN107250778B/zh active Active
- 2015-12-23 EP EP15825860.8A patent/EP3237894B1/fr active Active
- 2015-12-23 PL PL15825860T patent/PL3237894T3/pl unknown
- 2015-12-23 HU HUE15825860A patent/HUE050323T2/hu unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016103206A1 (fr) | 2016-06-30 |
| KR102545862B1 (ko) | 2023-06-21 |
| PT3237894T (pt) | 2020-05-04 |
| EP3237894B1 (fr) | 2020-02-12 |
| EP3237894A1 (fr) | 2017-11-01 |
| DK3237894T3 (da) | 2020-04-27 |
| AU2015370408B2 (en) | 2020-09-24 |
| CA2971662A1 (fr) | 2016-06-30 |
| KR20170101216A (ko) | 2017-09-05 |
| HUE050323T2 (hu) | 2020-11-30 |
| WO2016103007A1 (fr) | 2016-06-30 |
| US20180005905A1 (en) | 2018-01-04 |
| ES2775479T3 (es) | 2020-07-27 |
| HRP20200304T1 (hr) | 2020-06-12 |
| CN107250778B (zh) | 2020-09-22 |
| US10283420B2 (en) | 2019-05-07 |
| AU2015370408A1 (en) | 2017-07-13 |
| CN107250778A (zh) | 2017-10-13 |
| CA2971662C (fr) | 2023-06-27 |
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| PL3237894T3 (pl) | Sposób produkcji modułu optoelektronicznego z podstawą zawierającą podłoże metalowe, powłokę dielektryczną i warstwę przewodzącą |