PL3300253T3 - Sposób sterowania tranzystorem typu IGBT i powiązane urządzenie sterujące - Google Patents
Sposób sterowania tranzystorem typu IGBT i powiązane urządzenie sterująceInfo
- Publication number
- PL3300253T3 PL3300253T3 PL17192721T PL17192721T PL3300253T3 PL 3300253 T3 PL3300253 T3 PL 3300253T3 PL 17192721 T PL17192721 T PL 17192721T PL 17192721 T PL17192721 T PL 17192721T PL 3300253 T3 PL3300253 T3 PL 3300253T3
- Authority
- PL
- Poland
- Prior art keywords
- type transistor
- control device
- control method
- igbt type
- related control
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/641—Adaptable interconnections, e.g. fuses or antifuses
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1658986A FR3056859B1 (fr) | 2016-09-23 | 2016-09-23 | Procede de pilotage d'un transistor du type igbt et dispositif de pilotage associe |
| EP17192721.3A EP3300253B1 (fr) | 2016-09-23 | 2017-09-22 | Procédé de pilotage d'un transistor du type igbt et dispositif de pilotage associé |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3300253T3 true PL3300253T3 (pl) | 2020-03-31 |
Family
ID=57860978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL17192721T PL3300253T3 (pl) | 2016-09-23 | 2017-09-22 | Sposób sterowania tranzystorem typu IGBT i powiązane urządzenie sterujące |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10319822B2 (pl) |
| EP (1) | EP3300253B1 (pl) |
| JP (1) | JP7071079B2 (pl) |
| CN (1) | CN107872211B (pl) |
| ES (1) | ES2754698T3 (pl) |
| FR (1) | FR3056859B1 (pl) |
| PL (1) | PL3300253T3 (pl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102229656B1 (ko) | 2019-11-27 | 2021-03-19 | 현대모비스 주식회사 | 전력 반도체 소자의 동작 속도 제어 장치 및 전력 반도체 시스템 |
| KR102460421B1 (ko) | 2020-12-04 | 2022-10-31 | 현대모비스 주식회사 | 전력 반도체 소자의 전류 모니터링 장치 및 전류 모니터링 방법 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19610895A1 (de) * | 1996-03-20 | 1997-09-25 | Abb Research Ltd | Verfahren zur Einschaltregelung eines IGBTs und Vorrichtung zur Durchführung des Verfahrens |
| EP0926826A1 (en) * | 1997-12-18 | 1999-06-30 | ABB Research Ltd. | Method and device in power transistor |
| US6060943A (en) * | 1998-04-14 | 2000-05-09 | Nmb (Usa) Inc. | Circuit simulating a diode |
| SE516083C2 (sv) | 1998-08-12 | 2001-11-12 | Bombardier Transp Gmbh | Anordning för styrning av spännings-laddningsstyrda krafthalvledarelement |
| GB2417149A (en) * | 2004-08-12 | 2006-02-15 | Bombardier Transp Gmbh | Digital adaptive control of IGBT or MOS gate charging current in a converter for a railway traction motor |
| US8829949B2 (en) * | 2012-01-17 | 2014-09-09 | Franc Zajc | Method and apparatus for driving a voltage controlled power switch device |
| DE102012207147B4 (de) * | 2012-04-27 | 2016-01-21 | Infineon Technologies Ag | Verfahren zum Ansteuern von Leistungshalbleiterschaltern |
| JP6140814B2 (ja) * | 2012-05-14 | 2017-05-31 | テュフ ラインランド（シャンハイ）カンパニー リミテッド | 光起電力素子の評価方法、測定システム構成及び測定システム構成の使用方法 |
| DE102012011755A1 (de) * | 2012-06-12 | 2013-12-12 | Tridonic Gmbh & Co. Kg | Leistungsfaktorkorrekturschaltung, Betriebsgerät für ein Leuchtmittel und Verfahren zum Steuern einer Leistungsfaktorkorrekturschaltung |
| FR2993422B1 (fr) * | 2012-07-13 | 2015-05-01 | Valeo Sys Controle Moteur Sas | Dispositif de commande d'au moins un transistor |
| CN102969889B (zh) * | 2012-11-05 | 2015-08-12 | 矽力杰半导体技术(杭州)有限公司 | 一种自供电的源极驱动电路及应用其的开关电源 |
| JP6333358B2 (ja) * | 2013-04-05 | 2018-05-30 | エービービー テクノロジー エルティーディー． | Ｒｃ−ｉｇｂｔスイッチングパルス制御 |
| JP5907199B2 (ja) * | 2014-03-12 | 2016-04-26 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の制御方法 |
| JP2016073052A (ja) * | 2014-09-29 | 2016-05-09 | アイシン・エィ・ダブリュ株式会社 | スイッチング制御装置 |
| EP3138692A1 (en) * | 2015-08-06 | 2017-03-08 | OCE-Technologies B.V. | Imaging system for processing a media |
| FR3056756B1 (fr) * | 2016-09-23 | 2020-06-12 | Alstom Transport Technologies | Procede de detection d'un court-circuit dans un circuit electrique comprenant un transistor du type igbt et dispositif de pilotage associe |
-
2016
- 2016-09-23 FR FR1658986A patent/FR3056859B1/fr not_active Expired - Fee Related
-
2017
- 2017-09-22 ES ES17192721T patent/ES2754698T3/es active Active
- 2017-09-22 US US15/712,665 patent/US10319822B2/en active Active
- 2017-09-22 JP JP2017182123A patent/JP7071079B2/ja active Active
- 2017-09-22 EP EP17192721.3A patent/EP3300253B1/fr active Active
- 2017-09-22 PL PL17192721T patent/PL3300253T3/pl unknown
- 2017-09-25 CN CN201710879626.8A patent/CN107872211B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| FR3056859B1 (fr) | 2018-11-30 |
| EP3300253B1 (fr) | 2019-08-14 |
| JP2018050297A (ja) | 2018-03-29 |
| ES2754698T3 (es) | 2020-04-20 |
| CN107872211B (zh) | 2023-04-07 |
| EP3300253A1 (fr) | 2018-03-28 |
| US10319822B2 (en) | 2019-06-11 |
| JP7071079B2 (ja) | 2022-05-18 |
| US20180090578A1 (en) | 2018-03-29 |
| CN107872211A (zh) | 2018-04-03 |
| FR3056859A1 (fr) | 2018-03-30 |
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