PL330129A1 - Method of anisotropically etching monocrystalline semiconductors in selective manner using a wet etching process and apparatus therefor - Google Patents

Method of anisotropically etching monocrystalline semiconductors in selective manner using a wet etching process and apparatus therefor

Info

Publication number
PL330129A1
PL330129A1 PL98330129A PL33012998A PL330129A1 PL 330129 A1 PL330129 A1 PL 330129A1 PL 98330129 A PL98330129 A PL 98330129A PL 33012998 A PL33012998 A PL 33012998A PL 330129 A1 PL330129 A1 PL 330129A1
Authority
PL
Poland
Prior art keywords
apparatus therefor
selective manner
etching process
wet etching
monocrystalline semiconductors
Prior art date
Application number
PL98330129A
Inventor
Jan Dziuban
Ryszard Parosa
Edward Reszke
Original Assignee
Jan Dziuban
Ryszard Parosa
Edward Reszke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jan Dziuban, Ryszard Parosa, Edward Reszke filed Critical Jan Dziuban
Priority to PL98330129A priority Critical patent/PL330129A1/en
Priority to PCT/PL1999/000042 priority patent/WO2000034993A1/en
Publication of PL330129A1 publication Critical patent/PL330129A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
PL98330129A 1998-12-04 1998-12-04 Method of anisotropically etching monocrystalline semiconductors in selective manner using a wet etching process and apparatus therefor PL330129A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PL98330129A PL330129A1 (en) 1998-12-04 1998-12-04 Method of anisotropically etching monocrystalline semiconductors in selective manner using a wet etching process and apparatus therefor
PCT/PL1999/000042 WO2000034993A1 (en) 1998-12-04 1999-11-26 A means for wet anisotropic etching of mono-crystalline semiconductor material and a device implementing this means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL98330129A PL330129A1 (en) 1998-12-04 1998-12-04 Method of anisotropically etching monocrystalline semiconductors in selective manner using a wet etching process and apparatus therefor

Publications (1)

Publication Number Publication Date
PL330129A1 true PL330129A1 (en) 2000-06-05

Family

ID=20073315

Family Applications (1)

Application Number Title Priority Date Filing Date
PL98330129A PL330129A1 (en) 1998-12-04 1998-12-04 Method of anisotropically etching monocrystalline semiconductors in selective manner using a wet etching process and apparatus therefor

Country Status (2)

Country Link
PL (1) PL330129A1 (en)
WO (1) WO2000034993A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083926A2 (en) * 2002-04-02 2003-10-09 Politechnika Wroclawska The microwave enhanced method of silicon etching and the system for microwave enhanced semiconductors etching
CN109136931A (en) * 2018-08-31 2019-01-04 深圳市华星光电技术有限公司 A kind of high-efficiency copper molybdenum etching liquid and engraving method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162381A (en) * 1977-08-30 1979-07-24 Litton Systems, Inc. Microwave oven sensing system
JP2834600B2 (en) * 1991-05-31 1998-12-09 株式会社トクヤマ Purified silicon and its manufacturing method
US5261965A (en) * 1992-08-28 1993-11-16 Texas Instruments Incorporated Semiconductor wafer cleaning using condensed-phase processing
EP0701862A4 (en) * 1993-05-11 1996-07-24 Srl Inc MICROWAVE RADIATION METHOD AND DEVICE

Also Published As

Publication number Publication date
WO2000034993A1 (en) 2000-06-15

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