PL3427290T3 - Sposób produkcji materiałów a/m/x z alkiloaminą - Google Patents

Sposób produkcji materiałów a/m/x z alkiloaminą

Info

Publication number
PL3427290T3
PL3427290T3 PL17711270T PL17711270T PL3427290T3 PL 3427290 T3 PL3427290 T3 PL 3427290T3 PL 17711270 T PL17711270 T PL 17711270T PL 17711270 T PL17711270 T PL 17711270T PL 3427290 T3 PL3427290 T3 PL 3427290T3
Authority
PL
Poland
Prior art keywords
alkylamine
production process
material production
production
Prior art date
Application number
PL17711270T
Other languages
English (en)
Inventor
Henry James Snaith
Pabitra NAYAK
Bernard Wenger
Nakita NOEL
Severin HABISREUTINGER
David Moore
Original Assignee
Oxford University Innovation Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=55859227&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PL3427290(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Oxford University Innovation Limited filed Critical Oxford University Innovation Limited
Publication of PL3427290T3 publication Critical patent/PL3427290T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565—Oxadiazole compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photovoltaic Devices (AREA)
PL17711270T 2016-03-09 2017-03-08 Sposób produkcji materiałów a/m/x z alkiloaminą PL3427290T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1604050.3A GB201604050D0 (en) 2016-03-09 2016-03-09 A/M/X material production process with alkylamine
PCT/GB2017/050623 WO2017153752A1 (en) 2016-03-09 2017-03-08 A/m/x material production process with alkylamine
EP17711270.3A EP3427290B1 (en) 2016-03-09 2017-03-08 A/m/x material production process with alkylamine

Publications (1)

Publication Number Publication Date
PL3427290T3 true PL3427290T3 (pl) 2022-01-10

Family

ID=55859227

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17711270T PL3427290T3 (pl) 2016-03-09 2017-03-08 Sposób produkcji materiałów a/m/x z alkiloaminą

Country Status (9)

Country Link
US (1) US10797255B2 (pl)
EP (1) EP3427290B1 (pl)
JP (1) JP7008634B2 (pl)
KR (1) KR102363283B1 (pl)
CN (1) CN108780759B (pl)
ES (1) ES2884327T3 (pl)
GB (1) GB201604050D0 (pl)
PL (1) PL3427290T3 (pl)
WO (1) WO2017153752A1 (pl)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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US11174276B2 (en) * 2017-09-06 2021-11-16 Alliance For Sustainable Energy, Llc Organic-inorganic perovskite materials and methods of making the same
JP7304517B2 (ja) * 2018-07-10 2023-07-07 パナソニックIpマネジメント株式会社 太陽電池
GB201811538D0 (en) * 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Stabilised a/m/x materials
KR102800886B1 (ko) * 2018-08-23 2025-04-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
GB201817166D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Multi-junction device production process
GB201817167D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
US11631582B2 (en) 2018-11-21 2023-04-18 Cubicpv Inc. Enhanced perovskite materials for photovoltaic devices
US11339058B2 (en) * 2018-12-14 2022-05-24 Alliance For Sustainable Energy, Llc Manufacturing of perovskite films
GB201820427D0 (en) 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
CN110048001A (zh) * 2019-04-01 2019-07-23 桂林理工大学 一种通过卤素替换工程来调节铋基有机-无机杂化材料形貌、带隙和稳定性的方法
JP7542224B2 (ja) * 2019-05-29 2024-08-30 パナソニックIpマネジメント株式会社 光電変換膜およびそれを用いた太陽電池、ならびに光電変換膜の製造方法
KR102958206B1 (ko) * 2019-05-30 2026-04-29 에너지 머티리얼즈 코퍼레이션 고속으로 페로브스카이트 층을 제조하는 방법
CN110862232A (zh) * 2019-11-12 2020-03-06 宁波大学 一种硫基微晶玻璃材料及其制备方法
CN113929641B (zh) * 2020-07-14 2025-05-06 西安固能新材料科技有限公司 系列乙二铵三元晶态化合物及其制备方法以及作为含能材料的用途
WO2021207344A1 (en) * 2020-04-08 2021-10-14 The Trustees Of Princeton University Thermal management for perovskite electronic devices
US20210388009A1 (en) * 2020-06-10 2021-12-16 Nanyang Technological University Organic metal-halide perovskite precursor, process for production and use thereof
CN111883664B (zh) * 2020-06-30 2022-09-23 西安理工大学 一种双注入倍增型有机光电探测器及其制备方法
US11846886B2 (en) 2020-11-23 2023-12-19 International Business Machines Corporation Photoacid generator
WO2022217238A1 (en) * 2021-04-06 2022-10-13 Alliance For Sustainable Energy, Llc Methods for purifying perovskite precursors and improved perovskites manufactured therefrom
KR102573246B1 (ko) * 2021-04-20 2023-09-01 한국과학기술원 할라이드 페로브스카이트 박막의 저온 용액 공정 제조를 위한 용매 및 이를 이용한 페로브스카이트 박막 제조 방법
WO2023047116A1 (en) 2021-09-22 2023-03-30 Oxford University Innovation Limited Perovskite production process
KR102761911B1 (ko) * 2022-09-21 2025-02-05 서울대학교산학협력단 탠덤 태양전지의 제조방법
CN117205950A (zh) * 2023-09-19 2023-12-12 浙江师范大学 一种水稳定型卤化物钙钛矿Cs2Pt0.25Sn0.75Br6光催化剂的制备及应用
CN122349789A (zh) * 2023-12-22 2026-07-07 株式会社钟化 钙钛矿前体液、太阳能电池制造方法以及太阳能电池
CN118382342B (zh) * 2024-06-19 2024-10-01 天合光能股份有限公司 钙钛矿吸光层的制备方法、钙钛矿太阳能电池、光伏组件和光伏系统

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US5871579A (en) * 1997-09-25 1999-02-16 International Business Machines Corporation Two-step dipping technique for the preparation of organic-inorganic perovskite thin films
WO2013126385A1 (en) 2012-02-21 2013-08-29 Northwestern University Photoluminescent compounds
JP6069987B2 (ja) 2012-09-12 2017-02-01 日本ゼオン株式会社 ペロブスカイト化合物を用いた光電変換素子の製造方法
US10069025B2 (en) 2012-09-18 2018-09-04 Oxford University Innovation Limited Optoelectronic device
JP5992389B2 (ja) * 2012-11-16 2016-09-14 富士フイルム株式会社 光電変換素子、色素増感太陽電池、金属錯体色素、色素溶液、色素吸着電極および色素増感太陽電池の製造方法
JP6337561B2 (ja) * 2014-03-27 2018-06-06 株式会社リコー ペロブスカイト型太陽電池
GB201414110D0 (en) * 2014-08-08 2014-09-24 Isis Innovation Thin film production
WO2016105537A1 (en) 2014-12-23 2016-06-30 Los Alamos National Security, Llc Crystalline perovskite thin films and devices that include the films
CN104810480A (zh) * 2015-04-22 2015-07-29 上海纳米技术及应用国家工程研究中心有限公司 一种用于钙钛矿电池的二氧化钛薄层的制备方法
CN104934503B (zh) * 2015-06-12 2017-03-08 辽宁工业大学 一种钙钛矿太阳能电池光吸收层材料甲基胺溴化铅的制备方法
CN105331362B (zh) 2015-12-07 2017-08-04 南京理工大学 一种室温大产率无机卤素钙钛矿荧光量子点的制备方法
CN105647530B (zh) 2016-02-01 2017-12-12 南京理工大学 一种金属卤化物无机钙钛矿量子点的制备方法

Also Published As

Publication number Publication date
KR102363283B1 (ko) 2022-02-15
US10797255B2 (en) 2020-10-06
CN108780759B (zh) 2023-08-08
GB201604050D0 (en) 2016-04-20
JP2019516232A (ja) 2019-06-13
KR20180122393A (ko) 2018-11-12
EP3427290A1 (en) 2019-01-16
JP7008634B2 (ja) 2022-02-10
CN108780759A (zh) 2018-11-09
EP3427290B1 (en) 2021-08-04
ES2884327T3 (es) 2021-12-10
WO2017153752A1 (en) 2017-09-14
US20190115549A1 (en) 2019-04-18

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