PL354739A1 - Azotkowy laser półprzewodnikowyAzotkowy laser półprzewodnikowy - Google Patents

Azotkowy laser półprzewodnikowyAzotkowy laser półprzewodnikowy

Info

Publication number
PL354739A1
PL354739A1 PL02354739A PL35473902A PL354739A1 PL 354739 A1 PL354739 A1 PL 354739A1 PL 02354739 A PL02354739 A PL 02354739A PL 35473902 A PL35473902 A PL 35473902A PL 354739 A1 PL354739 A1 PL 354739A1
Authority
PL
Poland
Prior art keywords
semiconductor laser
nitride semiconductor
nitride
laser
semiconductor
Prior art date
Application number
PL02354739A
Other languages
English (en)
Inventor
RobertDwiliński Robert Dwiliński
RomanDoradziński Roman Doradziński
JerzyGarczyński Jerzy Garczyński
Leszek P.Sierzputowski Leszek P. Sierzputowski
YasuoKanbara Yasuo Kanbara
Original Assignee
AMMONO Sp.z o.o.AMMONO Sp.z o.o.
Nichia Corporationnichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMMONO Sp.z o.o.AMMONO Sp.z o.o., Nichia Corporationnichia Corporation filed Critical AMMONO Sp.z o.o.AMMONO Sp.z o.o.
Priority to PL02354739A priority Critical patent/PL354739A1/pl
Priority to EP02775396A priority patent/EP1453158A4/en
Priority to PL02374180A priority patent/PL374180A1/pl
Priority to PCT/JP2002/011136 priority patent/WO2003036771A1/ja
Priority to KR1020047006131A priority patent/KR100679377B1/ko
Priority to TW091132111A priority patent/TWI263387B/zh
Priority to EP02803072.4A priority patent/EP1453159B8/en
Priority to PCT/IB2002/004441 priority patent/WO2003043150A1/ja
Priority to US10/493,746 priority patent/US7057211B2/en
Priority to JP2003544869A priority patent/JP4383172B2/ja
Priority to CNB028212304A priority patent/CN1300901C/zh
Priority to JP2003539145A priority patent/JP4097601B2/ja
Priority to PL374184A priority patent/PL214287B1/pl
Priority to KR1020047006130A priority patent/KR100679387B1/ko
Priority to CNB028212312A priority patent/CN1263206C/zh
Priority to US10/493,594 priority patent/US7750355B2/en
Priority to KR20-2003-0008719U priority patent/KR200318416Y1/ko
Priority to KR20-2003-0008720U priority patent/KR200326032Y1/ko
Priority to JP2004517425A priority patent/JP2005531154A/ja
Priority to PCT/PL2003/000061 priority patent/WO2004004085A2/en
Priority to EP03761877A priority patent/EP1520329A2/en
Priority to CNB038150077A priority patent/CN100550543C/zh
Priority to PL376672A priority patent/PL216522B1/pl
Priority to US10/519,501 priority patent/US7315559B2/en
Priority to AU2003258919A priority patent/AU2003258919A1/en
Priority to KR1020047020979A priority patent/KR20050054482A/ko
Priority to KR20-2003-0025325U priority patent/KR200332762Y1/ko
Publication of PL354739A1 publication Critical patent/PL354739A1/pl
Priority to US11/976,167 priority patent/US20080050855A1/en
Priority to US11/969,735 priority patent/US7935550B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
PL02354739A 2001-10-26 2002-06-26 Azotkowy laser półprzewodnikowyAzotkowy laser półprzewodnikowy PL354739A1 (pl)

Priority Applications (29)

Application Number Priority Date Filing Date Title
PL02354739A PL354739A1 (pl) 2002-06-26 2002-06-26 Azotkowy laser półprzewodnikowyAzotkowy laser półprzewodnikowy
KR1020047006130A KR100679387B1 (ko) 2001-10-26 2002-10-28 질화물 반도체 레이저 소자 및 이의 제조방법
US10/493,594 US7750355B2 (en) 2001-10-26 2002-10-28 Light emitting element structure using nitride bulk single crystal layer
PCT/JP2002/011136 WO2003036771A1 (en) 2001-10-26 2002-10-28 Nitride semiconductor laser element, and production method therefor
KR1020047006131A KR100679377B1 (ko) 2001-10-26 2002-10-28 질화물 벌크 단결정층을 사용한 발광 디바이스 구조
TW091132111A TWI263387B (en) 2001-10-26 2002-10-28 Light emitting device structure provided with nitride bulk mono-crystal layers
EP02803072.4A EP1453159B8 (en) 2001-10-26 2002-10-28 Light emitting device structure using nitride bulk single crystal layer
PCT/IB2002/004441 WO2003043150A1 (en) 2001-10-26 2002-10-28 Light emitting element structure using nitride bulk single crystal layer
US10/493,746 US7057211B2 (en) 2001-10-26 2002-10-28 Nitride semiconductor laser device and manufacturing method thereof
JP2003544869A JP4383172B2 (ja) 2001-10-26 2002-10-28 窒化物バルク単結晶層を用いる発光素子構造及びその製造方法
PL02374180A PL374180A1 (pl) 2001-10-26 2002-10-28 Azotkowy półprzewodnikowy element laserowy oraz sposób jego wytwarzania
JP2003539145A JP4097601B2 (ja) 2001-10-26 2002-10-28 窒化物半導体レーザ素子、及びその製造方法
PL374184A PL214287B1 (pl) 2001-10-26 2002-10-28 Struktura urzadzenia emitujacego swiatlo z monokrystaliczna objetosciowa warstwa azotku
EP02775396A EP1453158A4 (en) 2001-10-26 2002-10-28 NITRIDE SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREFOR
CNB028212312A CN1263206C (zh) 2001-10-26 2002-10-28 氮化物半导体激光元件及其制造方法
CNB028212304A CN1300901C (zh) 2001-10-26 2002-10-28 使用氮化物块状单晶层的发光元件结构
KR20-2003-0008720U KR200326032Y1 (ko) 2002-06-26 2003-03-24 질화물 벌크 단결정을 이용하는 발광 소자 구조
KR20-2003-0008719U KR200318416Y1 (ko) 2002-06-26 2003-03-24 질화물 반도체 레이저 소자
EP03761877A EP1520329A2 (en) 2002-06-26 2003-06-26 Nitride semiconductor laser device and a method for improving its performance
PCT/PL2003/000061 WO2004004085A2 (en) 2002-06-26 2003-06-26 Nitride semiconductor laser device and a method for improving its performance
JP2004517425A JP2005531154A (ja) 2002-06-26 2003-06-26 窒化物半導体レーザ素子及びその性能を向上させる方法
CNB038150077A CN100550543C (zh) 2002-06-26 2003-06-26 氮化物半导体激光装置及其制造方法
PL376672A PL216522B1 (pl) 2002-06-26 2003-06-26 Azotkowe półprzewodnikowe urządzenie laserowe oraz sposób wytwarzania półprzewodnikowego urządzenia laserowego
US10/519,501 US7315559B2 (en) 2002-06-26 2003-06-26 Nitride semiconductor laser device and a method for improving its performance
AU2003258919A AU2003258919A1 (en) 2002-06-26 2003-06-26 Nitride semiconductor laser device and a method for improving its performance
KR1020047020979A KR20050054482A (ko) 2002-06-26 2003-06-26 질화물 반도체 레이저 디바이스 및 그의 성능을향상시키기 위한 방법
KR20-2003-0025325U KR200332762Y1 (ko) 2002-06-26 2003-08-06 질화물 벌크 단결정을 이용하는 발광 소자 구조
US11/976,167 US20080050855A1 (en) 2002-06-26 2007-10-22 Nitride semiconductor laser device and a method for improving its performance
US11/969,735 US7935550B2 (en) 2001-10-26 2008-01-04 Method of forming light-emitting device using nitride bulk single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL02354739A PL354739A1 (pl) 2002-06-26 2002-06-26 Azotkowy laser półprzewodnikowyAzotkowy laser półprzewodnikowy

Publications (1)

Publication Number Publication Date
PL354739A1 true PL354739A1 (pl) 2003-12-29

Family

ID=30768634

Family Applications (1)

Application Number Title Priority Date Filing Date
PL02354739A PL354739A1 (pl) 2001-10-26 2002-06-26 Azotkowy laser półprzewodnikowyAzotkowy laser półprzewodnikowy

Country Status (2)

Country Link
KR (3) KR200318416Y1 (pl)
PL (1) PL354739A1 (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3848956A4 (en) * 2018-09-07 2021-11-03 Sumitomo Heavy Industries, Ltd. Semiconductor manufacturing method and semiconductor manufacturing device

Also Published As

Publication number Publication date
KR200318416Y1 (ko) 2003-06-28
KR200332762Y1 (ko) 2003-11-07
KR200326032Y1 (ko) 2003-09-13

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