PL357704A1 - Method of obtaining voluminal mono-crystalline nitride containing gallium - Google Patents

Method of obtaining voluminal mono-crystalline nitride containing gallium

Info

Publication number
PL357704A1
PL357704A1 PL02357704A PL35770402A PL357704A1 PL 357704 A1 PL357704 A1 PL 357704A1 PL 02357704 A PL02357704 A PL 02357704A PL 35770402 A PL35770402 A PL 35770402A PL 357704 A1 PL357704 A1 PL 357704A1
Authority
PL
Poland
Prior art keywords
voluminal
mono
obtaining
nitride containing
containing gallium
Prior art date
Application number
PL02357704A
Other languages
Polish (pl)
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek P. Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL02357704A priority Critical patent/PL357704A1/en
Priority to JP2004558480A priority patent/JP2006509707A/en
Priority to US10/538,349 priority patent/US7314517B2/en
Priority to PCT/JP2003/015903 priority patent/WO2004053208A1/en
Priority to AU2003285766A priority patent/AU2003285766A1/en
Priority to PL379548A priority patent/PL225430B1/en
Publication of PL357704A1 publication Critical patent/PL357704A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
PL02357704A 2002-12-11 2002-12-11 Method of obtaining voluminal mono-crystalline nitride containing gallium PL357704A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PL02357704A PL357704A1 (en) 2002-12-11 2002-12-11 Method of obtaining voluminal mono-crystalline nitride containing gallium
JP2004558480A JP2006509707A (en) 2002-12-11 2003-12-11 An improved process for obtaining bulk single crystals of gallium-containing nitrides
US10/538,349 US7314517B2 (en) 2002-12-11 2003-12-11 Process for obtaining bulk mono-crystalline gallium-containing nitride
PCT/JP2003/015903 WO2004053208A1 (en) 2002-12-11 2003-12-11 Process for obtaining bulk-crystalline gallium-containing nitride
AU2003285766A AU2003285766A1 (en) 2002-12-11 2003-12-11 Process for obtaining bulk-crystalline gallium-containing nitride
PL379548A PL225430B1 (en) 2002-12-11 2003-12-11 Process for obtaining bulk-crystalline gallium-containing nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL02357704A PL357704A1 (en) 2002-12-11 2002-12-11 Method of obtaining voluminal mono-crystalline nitride containing gallium

Publications (1)

Publication Number Publication Date
PL357704A1 true PL357704A1 (en) 2004-06-14

Family

ID=32733404

Family Applications (1)

Application Number Title Priority Date Filing Date
PL02357704A PL357704A1 (en) 2002-12-11 2002-12-11 Method of obtaining voluminal mono-crystalline nitride containing gallium

Country Status (1)

Country Link
PL (1) PL357704A1 (en)

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Legal Events

Date Code Title Description
REFS Decisions on refusal to grant patents (taken after the publication of the particulars of the applications)