PL3597797T3 - Podłoże półprzewodnikowe z azotku grupy iii - Google Patents
Podłoże półprzewodnikowe z azotku grupy iiiInfo
- Publication number
- PL3597797T3 PL3597797T3 PL18768215T PL18768215T PL3597797T3 PL 3597797 T3 PL3597797 T3 PL 3597797T3 PL 18768215 T PL18768215 T PL 18768215T PL 18768215 T PL18768215 T PL 18768215T PL 3597797 T3 PL3597797 T3 PL 3597797T3
- Authority
- PL
- Poland
- Prior art keywords
- semiconductor substrate
- nitride semiconductor
- group iii
- iii nitride
- group
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017052384A JP6831276B2 (ja) | 2017-03-17 | 2017-03-17 | Ｉｉｉ族窒化物半導体基板 |
| PCT/JP2018/009296 WO2018168706A1 (ja) | 2017-03-17 | 2018-03-09 | Ｉｉｉ族窒化物半導体基板 |
| EP18768215.8A EP3597797B1 (en) | 2017-03-17 | 2018-03-09 | Group iii nitride semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3597797T3 true PL3597797T3 (pl) | 2022-05-02 |
Family
ID=63522279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL18768215T PL3597797T3 (pl) | 2017-03-17 | 2018-03-09 | Podłoże półprzewodnikowe z azotku grupy iii |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11662374B2 (pl) |
| EP (1) | EP3597797B1 (pl) |
| JP (1) | JP6831276B2 (pl) |
| KR (1) | KR102464462B1 (pl) |
| CN (1) | CN110431258A (pl) |
| PL (1) | PL3597797T3 (pl) |
| TW (1) | TWI753134B (pl) |
| WO (1) | WO2018168706A1 (pl) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7046496B2 (ja) | 2017-03-28 | 2022-04-04 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板、及び、バルク結晶 |
| JP7055595B2 (ja) | 2017-03-29 | 2022-04-18 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法 |
| JP7775708B2 (ja) * | 2019-03-29 | 2025-11-26 | 三菱ケミカル株式会社 | ＧａＮ基板ウエハおよびＧａＮ基板ウエハの製造方法 |
| US12224344B2 (en) * | 2021-04-08 | 2025-02-11 | Semiconductor Components Industries, Llc | Method and system for control of sidewall orientation in vertical gallium nitride field effect transistors |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5219409A (en) | 1975-08-04 | 1977-02-14 | Ouyou Chishitsu Chiyousa Jimus | Triaxial pressing apparatus |
| JPS577866A (en) | 1980-06-16 | 1982-01-16 | Shinagawa Refractories Co | Refractory heat insulating plate for tandish |
| JP4581490B2 (ja) | 2004-05-31 | 2010-11-17 | 日立電線株式会社 | Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法 |
| JP2008078613A (ja) * | 2006-08-24 | 2008-04-03 | Rohm Co Ltd | 窒化物半導体の製造方法及び窒化物半導体素子 |
| JP5271489B2 (ja) | 2006-10-02 | 2013-08-21 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体基板及びその製造方法 |
| US9064706B2 (en) | 2006-11-17 | 2015-06-23 | Sumitomo Electric Industries, Ltd. | Composite of III-nitride crystal on laterally stacked substrates |
| JP5332168B2 (ja) | 2006-11-17 | 2013-11-06 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の製造方法 |
| US7727874B2 (en) * | 2007-09-14 | 2010-06-01 | Kyma Technologies, Inc. | Non-polar and semi-polar GaN substrates, devices, and methods for making them |
| JP2009238772A (ja) * | 2008-03-25 | 2009-10-15 | Sumitomo Electric Ind Ltd | エピタキシャル基板及びエピタキシャル基板の製造方法 |
| JP2011042542A (ja) * | 2009-08-24 | 2011-03-03 | Furukawa Co Ltd | Ｉｉｉ族窒化物基板の製造方法およびｉｉｉ族窒化物基板 |
| JP6137197B2 (ja) | 2012-12-17 | 2017-05-31 | 三菱化学株式会社 | 窒化ガリウム基板、および、窒化物半導体結晶の製造方法 |
| JP2014172797A (ja) * | 2013-03-11 | 2014-09-22 | Aetech Corp | 窒化ガリウム（ＧａＮ）自立基板の製造方法及び製造装置 |
| TWI638071B (zh) | 2013-08-08 | 2018-10-11 | 三菱化學股份有限公司 | 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ單結晶之製造方法及半導體裝置之製造方法 |
| WO2015107813A1 (ja) | 2014-01-17 | 2015-07-23 | 三菱化学株式会社 | ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法 |
| WO2015137266A1 (ja) | 2014-03-10 | 2015-09-17 | 日本碍子株式会社 | 窒化物結晶の製造方法 |
| JP6573154B2 (ja) | 2014-06-05 | 2019-09-11 | パナソニックＩｐマネジメント株式会社 | 窒化物半導体構造、窒化物半導体構造を備えた電子デバイス、窒化物半導体構造を備えた発光デバイス、および窒化物半導体構造を製造する方法 |
| JP2017052384A (ja) | 2015-09-09 | 2017-03-16 | 小島プレス工業株式会社 | 車両の衝撃吸収構造 |
| JP6266742B1 (ja) | 2016-12-20 | 2018-01-24 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法 |
| JP6232150B1 (ja) | 2017-01-10 | 2017-11-15 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法 |
-
2017
- 2017-03-17 JP JP2017052384A patent/JP6831276B2/ja active Active
-
2018
- 2018-03-09 CN CN201880019839.6A patent/CN110431258A/zh active Pending
- 2018-03-09 WO PCT/JP2018/009296 patent/WO2018168706A1/ja not_active Ceased
- 2018-03-09 EP EP18768215.8A patent/EP3597797B1/en active Active
- 2018-03-09 PL PL18768215T patent/PL3597797T3/pl unknown
- 2018-03-09 US US16/493,659 patent/US11662374B2/en active Active
- 2018-03-09 KR KR1020197025828A patent/KR102464462B1/ko active Active
- 2018-03-14 TW TW107108617A patent/TWI753134B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102464462B1 (ko) | 2022-11-04 |
| US11662374B2 (en) | 2023-05-30 |
| WO2018168706A1 (ja) | 2018-09-20 |
| KR20190122695A (ko) | 2019-10-30 |
| EP3597797A1 (en) | 2020-01-22 |
| TWI753134B (zh) | 2022-01-21 |
| EP3597797A4 (en) | 2020-12-30 |
| JP2018154523A (ja) | 2018-10-04 |
| CN110431258A (zh) | 2019-11-08 |
| EP3597797B1 (en) | 2022-03-30 |
| JP6831276B2 (ja) | 2021-02-17 |
| US20200132750A1 (en) | 2020-04-30 |
| TW201900951A (zh) | 2019-01-01 |
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