PL373857A1 - System do obróbki płytek półprzewodnikowych z zastosowaniem suszącego kolektora menisku, podciśnienia i par alkoholu izopropylowego - Google Patents

System do obróbki płytek półprzewodnikowych z zastosowaniem suszącego kolektora menisku, podciśnienia i par alkoholu izopropylowego

Info

Publication number
PL373857A1
PL373857A1 PL03373857A PL37385703A PL373857A1 PL 373857 A1 PL373857 A1 PL 373857A1 PL 03373857 A PL03373857 A PL 03373857A PL 37385703 A PL37385703 A PL 37385703A PL 373857 A1 PL373857 A1 PL 373857A1
Authority
PL
Poland
Prior art keywords
meniscus
vacuum
substrate processing
ipa vapor
drying manifold
Prior art date
Application number
PL03373857A
Other languages
English (en)
Other versions
PL208010B1 (pl
Inventor
Carl Woode
James P. Garcia
Larios John De
Mike Ravkin
Fred C. Redeker
Afshin Nickhou
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/261,839 external-priority patent/US7234477B2/en
Priority claimed from US10/330,897 external-priority patent/US7240679B2/en
Priority claimed from US10/404,270 external-priority patent/US7069937B2/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Publication of PL373857A1 publication Critical patent/PL373857A1/pl
Publication of PL208010B1 publication Critical patent/PL208010B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
PL373857A 2002-09-30 2003-09-30 Sposób obróbki płytek półprzewodnikowych i głowica do przygotowania powierzchni płytek półprzewodnikowych PL208010B1 (pl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/261,839 US7234477B2 (en) 2000-06-30 2002-09-30 Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US10/330,897 US7240679B2 (en) 2002-09-30 2002-12-24 System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US10/330,843 US7198055B2 (en) 2002-09-30 2002-12-24 Meniscus, vacuum, IPA vapor, drying manifold
US10/404,270 US7069937B2 (en) 2002-09-30 2003-03-31 Vertical proximity processor

Publications (2)

Publication Number Publication Date
PL373857A1 true PL373857A1 (pl) 2005-09-19
PL208010B1 PL208010B1 (pl) 2011-03-31

Family

ID=32046058

Family Applications (1)

Application Number Title Priority Date Filing Date
PL373857A PL208010B1 (pl) 2002-09-30 2003-09-30 Sposób obróbki płytek półprzewodnikowych i głowica do przygotowania powierzchni płytek półprzewodnikowych

Country Status (9)

Country Link
EP (1) EP1472720B1 (pl)
JP (1) JP4589866B2 (pl)
KR (1) KR101338797B1 (pl)
CN (1) CN100350552C (pl)
AU (1) AU2003277185A1 (pl)
PL (1) PL208010B1 (pl)
SG (2) SG140470A1 (pl)
TW (1) TWI230396B (pl)
WO (1) WO2004030051A2 (pl)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7597765B2 (en) * 2002-09-30 2009-10-06 Lam Research Corporation Post etch wafer surface cleaning with liquid meniscus
US8236382B2 (en) 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7520285B2 (en) 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7997288B2 (en) * 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
DE10361075A1 (de) * 2003-12-22 2005-07-28 Pac Tech - Packaging Technologies Gmbh Verfahren und Vorichtung zur Trocknung von Schaltungssubstraten
US8062471B2 (en) 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
WO2006038472A1 (ja) * 2004-10-06 2006-04-13 Ebara Corporation 基板処理装置及び基板処理方法
JP4641964B2 (ja) * 2006-03-30 2011-03-02 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US7928366B2 (en) 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US8291921B2 (en) * 2008-08-19 2012-10-23 Lam Research Corporation Removing bubbles from a fluid flowing down through a plenum
US8813764B2 (en) 2009-05-29 2014-08-26 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
US8146902B2 (en) 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US7975708B2 (en) * 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
JP4924226B2 (ja) * 2007-06-14 2012-04-25 東ソー株式会社 表面加工方法及び表面加工装置
US8141566B2 (en) 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8739805B2 (en) * 2008-11-26 2014-06-03 Lam Research Corporation Confinement of foam delivered by a proximity head
US20110289795A1 (en) 2010-02-16 2011-12-01 Tomoatsu Ishibashi Substrate drying apparatus, substrate drying method and control program
JP5503323B2 (ja) * 2010-02-16 2014-05-28 株式会社荏原製作所 基板乾燥装置
CN102441843B (zh) * 2011-08-29 2014-12-10 上海华力微电子有限公司 一种cmp机台内置清洗结构及方法
US20150090299A1 (en) * 2013-09-27 2015-04-02 Applied Materials, Inc. Processes and apparatus for cleaning, rinsing, and drying substrates
CN116564846A (zh) * 2022-01-27 2023-08-08 长鑫存储技术有限公司 一种晶圆加工装置及晶圆加工控制方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910006087B1 (ko) * 1988-06-29 1991-08-12 삼성반도체통신 주식회사 반도체 제조용 웨이퍼 세정기
JPH03125453A (ja) * 1989-10-09 1991-05-28 Toshiba Corp 半導体ウエハ移送装置
KR910010643A (ko) * 1989-11-24 1991-06-29 김광호 웨이퍼 세정방법 및 그 장치
JPH08264626A (ja) * 1994-04-28 1996-10-11 Hitachi Ltd 試料保持方法及び試料表面の流体処理方法並びにそれらの装置
US5660642A (en) * 1995-05-26 1997-08-26 The Regents Of The University Of California Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
JPH1092784A (ja) * 1996-09-10 1998-04-10 Toshiba Microelectron Corp ウェーハ処理装置およびウェーハ処理方法
JP3735175B2 (ja) * 1997-03-04 2006-01-18 大日本スクリーン製造株式会社 基板処理装置
DE69832567T2 (de) * 1997-09-24 2007-01-18 Interuniversitair Micro-Electronica Centrum Vzw Verfahren und Vorrichtung zum Entfernen von einer Flüssigkeit von der Oberfläche eines rotierenden Substrats
EP0905746A1 (en) * 1997-09-24 1999-03-31 Interuniversitair Micro-Elektronica Centrum Vzw Method of removing a liquid from a surface of a rotating substrate
US6334902B1 (en) * 1997-09-24 2002-01-01 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for removing a liquid from a surface
EP0970511B1 (en) * 1997-09-24 2005-01-12 Interuniversitair Micro-Elektronica Centrum Vzw Method and apparatus for removing a liquid from a surface
US6398975B1 (en) * 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
JP2000015159A (ja) * 1998-07-02 2000-01-18 Dainippon Screen Mfg Co Ltd 処理液供給装置
JP2001077069A (ja) * 1999-06-30 2001-03-23 Sony Corp 基板処理方法及び基板処理装置
JP3873099B2 (ja) * 2000-01-13 2007-01-24 アルプス電気株式会社 基板ガイド装置ならびにこれを用いた洗浄装置
US6555017B1 (en) * 2000-10-13 2003-04-29 The Regents Of The University Of Caliofornia Surface contouring by controlled application of processing fluid using Marangoni effect
JP4016598B2 (ja) * 2001-01-16 2007-12-05 株式会社日立製作所 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI230396B (en) 2005-04-01
PL208010B1 (pl) 2011-03-31
SG140470A1 (en) 2008-03-28
CN1685472A (zh) 2005-10-19
AU2003277185A1 (en) 2004-04-19
CN100350552C (zh) 2007-11-21
TW200410299A (en) 2004-06-16
EP1472720B1 (en) 2009-11-11
SG140469A1 (en) 2008-03-28
KR20050060029A (ko) 2005-06-21
KR101338797B1 (ko) 2013-12-06
WO2004030051A3 (en) 2004-09-02
EP1472720A2 (en) 2004-11-03
WO2004030051A2 (en) 2004-04-08
JP2006501693A (ja) 2006-01-12
JP4589866B2 (ja) 2010-12-01

Similar Documents

Publication Publication Date Title
PL373857A1 (pl) System do obróbki płytek półprzewodnikowych z zastosowaniem suszącego kolektora menisku, podciśnienia i par alkoholu izopropylowego
EP1370971A4 (en) PROCESSING MODULES FOR A COMPUTER ARCHITECTURE FOR BROADBAND NETWORKS
AU2001290171A1 (en) High pressure processing chamber for semiconductor substrate
AU2003233994A1 (en) Vapor augmented heatsink with multi-wick structure
AU2003231869A1 (en) Dual arm substrate transport apparatus
WO2007112454A3 (en) Apparatus and method for processing substrates using one or more vacuum transfer chamber units
AU2002343583A1 (en) Chemical vapor deposition system
WO2007117583A3 (en) Cluster tool for epitaxial film formation
EP1501961A4 (en) HIGH PRESSURE PROCESSING CHAMBER FOR MULTIPLE SEMICONDUCTOR SUBSTRATES
MX247357B (es) Dispositivos fotovoltaicos organicos.
EP1454998A4 (en) VACUUM CARBONITURING PROCESS
AU2003210012A1 (en) Dehydration drying method and apparatus, and substrate processing apparatus
AU2224600A (en) Heating device for heating semiconductor wafers in thermal processing chambers
AU2003207185A1 (en) Organic semiconductor structure, process for producing the same, and organic semiconductor device
AU2001253513A1 (en) Substrate processing system
SG108942A1 (en) Vacuum arc vapor deposition apparatus
AU2003265634A1 (en) Substrate processing system
AU2002327463A1 (en) Methods, apparatuses, system, and articles for associating metadata with datastream
TW200513426A (en) Docking-type system and method for transferring and treating substrate
AU2003248121A1 (en) Substrate processing container
CA2431531A1 (en) Arrangement for conveying a plate-like product from one position to another
AU2002354086A1 (en) Conductive film, manufacturing method thereof, substrate having the same
AU2003231451A1 (en) Substrate processing device
MXPA03009051A (es) Correccion de errores por transformacion iterativa rapida de fourier.
WO2007001663A3 (en) A semiconductor substrate processing apparatus with a passive substrate gripper

Legal Events

Date Code Title Description
LAPS Decisions on the lapse of the protection rights

Effective date: 20130930