PL3791421T3 - Reaktor do chemicznego osadzania z fazy gazowej ze wspomaganiem plazmowym generowanym mikrofalowo na dużej powierzchni (LA MPCVD) i sposób jego wytwarzania - Google Patents

Reaktor do chemicznego osadzania z fazy gazowej ze wspomaganiem plazmowym generowanym mikrofalowo na dużej powierzchni (LA MPCVD) i sposób jego wytwarzania

Info

Publication number
PL3791421T3
PL3791421T3 PL19727111T PL19727111T PL3791421T3 PL 3791421 T3 PL3791421 T3 PL 3791421T3 PL 19727111 T PL19727111 T PL 19727111T PL 19727111 T PL19727111 T PL 19727111T PL 3791421 T3 PL3791421 T3 PL 3791421T3
Authority
PL
Poland
Prior art keywords
mpcvd
manufacture
vapor deposition
chemical vapor
large area
Prior art date
Application number
PL19727111T
Other languages
English (en)
Inventor
Justas ZALIECKAS
Original Assignee
Vestlandets Innovasjonsselskap As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vestlandets Innovasjonsselskap As filed Critical Vestlandets Innovasjonsselskap As
Publication of PL3791421T3 publication Critical patent/PL3791421T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL19727111T 2018-05-08 2019-05-08 Reaktor do chemicznego osadzania z fazy gazowej ze wspomaganiem plazmowym generowanym mikrofalowo na dużej powierzchni (LA MPCVD) i sposób jego wytwarzania PL3791421T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20180654A NO345052B1 (en) 2018-05-08 2018-05-08 Large area microwave plasma chemical vapour deposition (la mpcvd) reactor apparatus and method for providing same
PCT/NO2019/050103 WO2019216772A1 (en) 2018-05-08 2019-05-08 Large area microwave plasma cvd apparatus and corresponding method for providing such deposition
EP19727111.7A EP3791421B1 (en) 2018-05-08 2019-05-08 Large area microwave plasma chemical vapour deposition (la mpcvd) reactor apparatus and method for providing same

Publications (1)

Publication Number Publication Date
PL3791421T3 true PL3791421T3 (pl) 2022-06-27

Family

ID=66668997

Family Applications (1)

Application Number Title Priority Date Filing Date
PL19727111T PL3791421T3 (pl) 2018-05-08 2019-05-08 Reaktor do chemicznego osadzania z fazy gazowej ze wspomaganiem plazmowym generowanym mikrofalowo na dużej powierzchni (LA MPCVD) i sposób jego wytwarzania

Country Status (15)

Country Link
US (1) US12437971B2 (pl)
EP (1) EP3791421B1 (pl)
JP (1) JP7438136B2 (pl)
CN (1) CN112088419B (pl)
DK (1) DK3791421T3 (pl)
ES (1) ES2912575T3 (pl)
HR (1) HRP20220625T1 (pl)
IL (1) IL278483B (pl)
LT (1) LT3791421T (pl)
NO (1) NO345052B1 (pl)
PL (1) PL3791421T3 (pl)
PT (1) PT3791421T (pl)
RS (1) RS63181B1 (pl)
SG (1) SG11202010162XA (pl)
WO (1) WO2019216772A1 (pl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116544635A (zh) * 2021-05-21 2023-08-04 北京华镁钛科技有限公司 一种液晶移相器、液晶天线和移相方法
CN115354311A (zh) * 2022-07-15 2022-11-18 杭州电子科技大学 复合左右手波导的缝隙阵列天线表面波等离子沉积装置
WO2026064920A1 (en) * 2024-09-24 2026-04-02 Qualcomm Incorporated Tuner-adjusted antenna pattern

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US5302803A (en) * 1991-12-23 1994-04-12 Consortium For Surface Processing, Inc. Apparatus and method for uniform microwave plasma processing using TE1101 modes
JP3176493B2 (ja) * 1993-09-17 2001-06-18 株式会社神戸製鋼所 高配向性ダイヤモンド薄膜の形成方法
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TW200415726A (en) * 2002-12-05 2004-08-16 Adv Lcd Tech Dev Ct Co Ltd Plasma processing apparatus and plasma processing method
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KR100520635B1 (ko) 2003-12-10 2005-10-13 삼성전자주식회사 플레어 각이 변화하는 혼 안테나를 구비하는 전자사이클로트론 공명 장비
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KR101638051B1 (ko) * 2015-07-23 2016-07-08 서울대학교산학협력단 복합 좌우현 전송선로 및 접지면을 이용한 비대칭 공면 도파관 안테나
KR101781290B1 (ko) * 2016-02-29 2017-09-22 부산대학교 산학협력단 대면적 표면파 플라즈마 장치 및 이를 이용하여 전기전도성 다이아몬드 코팅방법
CN106202634A (zh) * 2016-06-28 2016-12-07 中国人民解放军空军工程大学 一种crlh传输线结构的等效电路结构及其设计方法
CN107475692A (zh) * 2017-08-14 2017-12-15 甘志银 一种金刚石薄膜微波等离子体化学气相沉积方法及装置

Also Published As

Publication number Publication date
NO20180654A1 (en) 2019-11-11
JP7438136B2 (ja) 2024-02-26
US20210057190A1 (en) 2021-02-25
DK3791421T3 (da) 2022-05-09
JP2021523296A (ja) 2021-09-02
WO2019216772A1 (en) 2019-11-14
US12437971B2 (en) 2025-10-07
NO345052B1 (en) 2020-09-07
HRP20220625T1 (hr) 2022-06-24
LT3791421T (lt) 2022-05-25
PT3791421T (pt) 2022-05-04
EP3791421B1 (en) 2022-02-16
SG11202010162XA (en) 2020-11-27
CN112088419A (zh) 2020-12-15
ES2912575T3 (es) 2022-05-26
IL278483B (en) 2022-03-01
RS63181B1 (sr) 2022-06-30
CN112088419B (zh) 2025-03-07
EP3791421A1 (en) 2021-03-17

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