PL391416A1 - Sposób wytwarzania grafenu - Google Patents

Sposób wytwarzania grafenu

Info

Publication number
PL391416A1
PL391416A1 PL39141610A PL39141610A PL391416A1 PL 391416 A1 PL391416 A1 PL 391416A1 PL 39141610 A PL39141610 A PL 39141610A PL 39141610 A PL39141610 A PL 39141610A PL 391416 A1 PL391416 A1 PL 391416A1
Authority
PL
Poland
Prior art keywords
graphene preparation
substrate
graphene
epitaxing
sublimation
Prior art date
Application number
PL39141610A
Other languages
English (en)
Other versions
PL213291B1 (pl
Inventor
Włodzimierz Strupiński
Original Assignee
Instytut Technologii Materiałów Elektronicznych
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Technologii Materiałów Elektronicznych filed Critical Instytut Technologii Materiałów Elektronicznych
Priority to PL391416A priority Critical patent/PL213291B1/pl
Priority to JP2011121274A priority patent/JP5662249B2/ja
Priority to DK11168749.7T priority patent/DK2392547T3/en
Priority to CN201180027996.XA priority patent/CN102933491B/zh
Priority to KR20127031787A priority patent/KR101465452B1/ko
Priority to PCT/PL2011/050023 priority patent/WO2011155858A2/en
Priority to EP11168749.7A priority patent/EP2392547B1/en
Priority to US13/154,920 priority patent/US9067796B2/en
Publication of PL391416A1 publication Critical patent/PL391416A1/pl
Publication of PL213291B1 publication Critical patent/PL213291B1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/025—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Przedmiotem wynalazku jest sposób wytwarzania grafenu poprzez jego epitaksję z fazy gazowej na podłożu posiadającym powierzchnię z SiC, charakteryzujący się tym, że proces sublimacji krzemu z podłoża kontroluje się za pomocą przepływu gazu, obojętnego (10) przez reaktor epitaksjalny. Wynalazek obejmuje także grafen otrzymany tym sposobem.
PL391416A 2010-06-07 2010-06-07 Sposób wytwarzania grafenu PL213291B1 (pl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
PL391416A PL213291B1 (pl) 2010-06-07 2010-06-07 Sposób wytwarzania grafenu
JP2011121274A JP5662249B2 (ja) 2010-06-07 2011-05-31 グラフェンの製造方法
DK11168749.7T DK2392547T3 (en) 2010-06-07 2011-06-06 Process for producing graphene
CN201180027996.XA CN102933491B (zh) 2010-06-07 2011-06-06 石墨烯的生产方法
KR20127031787A KR101465452B1 (ko) 2010-06-07 2011-06-06 그래핀 제조 방법
PCT/PL2011/050023 WO2011155858A2 (en) 2010-06-07 2011-06-06 Method of graphene manufacturing
EP11168749.7A EP2392547B1 (en) 2010-06-07 2011-06-06 Method of graphene manufacturing
US13/154,920 US9067796B2 (en) 2010-06-07 2011-06-07 Method of graphene manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL391416A PL213291B1 (pl) 2010-06-07 2010-06-07 Sposób wytwarzania grafenu

Publications (2)

Publication Number Publication Date
PL391416A1 true PL391416A1 (pl) 2011-12-19
PL213291B1 PL213291B1 (pl) 2013-02-28

Family

ID=44759809

Family Applications (1)

Application Number Title Priority Date Filing Date
PL391416A PL213291B1 (pl) 2010-06-07 2010-06-07 Sposób wytwarzania grafenu

Country Status (8)

Country Link
US (1) US9067796B2 (pl)
EP (1) EP2392547B1 (pl)
JP (1) JP5662249B2 (pl)
KR (1) KR101465452B1 (pl)
CN (1) CN102933491B (pl)
DK (1) DK2392547T3 (pl)
PL (1) PL213291B1 (pl)
WO (1) WO2011155858A2 (pl)

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JP5885198B2 (ja) * 2012-02-28 2016-03-15 国立大学法人九州大学 グラフェン薄膜の製造方法及びグラフェン薄膜
CN103367121B (zh) * 2012-03-28 2016-04-13 清华大学 外延结构体的制备方法
PL2836460T3 (pl) * 2012-04-09 2022-12-27 Ohio University Sposób wytwarzania grafenu
CN103378223B (zh) * 2012-04-25 2016-07-06 清华大学 外延结构体的制备方法
PL224447B1 (pl) 2012-08-25 2016-12-30 Advanced Graphene Products Spółka Z Ograniczoną Odpowiedzialnością Sposób oddzielania grafenu od ciekłej matrycy formującej
US9059013B2 (en) * 2013-03-21 2015-06-16 International Business Machines Corporation Self-formation of high-density arrays of nanostructures
US20150005887A1 (en) * 2013-06-30 2015-01-01 International Business Machines Corporation Intrinsically lubricated joint replacement materials, structure, and process
JP2015040156A (ja) * 2013-08-23 2015-03-02 日本電信電話株式会社 グラフェン形成方法および形成装置
JP5960666B2 (ja) * 2013-09-30 2016-08-02 日本電信電話株式会社 炭化ケイ素導波路素子
JP6002106B2 (ja) * 2013-09-30 2016-10-05 日本電信電話株式会社 炭化ケイ素光導波路素子
ES2589793T3 (es) 2013-10-28 2016-11-16 Advanced Graphene Products Sp. Z O. O. Procedimiento de producción de grafeno sobre un metal líquido
US9284640B2 (en) 2013-11-01 2016-03-15 Advanced Graphene Products Sp. Z.O.O. Method of producing graphene from liquid metal
CN104805505A (zh) * 2014-01-24 2015-07-29 泉州市博泰半导体科技有限公司 一种制备目标薄膜层的方法
CN103864064A (zh) * 2014-03-06 2014-06-18 新疆大学 一种制备氮掺杂石墨烯的方法
US10562278B2 (en) * 2014-05-30 2020-02-18 University Of Massachusetts Multilayer graphene structures with enhanced mechanical properties resulting from deterministic control of interlayer twist angles and chemical functionalization
CN104404620B (zh) * 2014-12-01 2017-05-17 山东大学 一种在大直径6H/4H‑SiC硅面和碳面双面同时生长石墨烯的方法
CN104477899B (zh) * 2014-12-12 2016-05-25 重庆墨希科技有限公司 一种制备石墨烯的夹具以及制备石墨烯的方法
CN105984865A (zh) * 2015-02-11 2016-10-05 中国科学院物理研究所 用于热解碳化硅片生长石墨烯的坩埚
CN104726845B (zh) * 2015-03-05 2018-05-01 中国科学院上海微系统与信息技术研究所 h-BN上石墨烯纳米带的制备方法
EP3070754A1 (en) 2015-03-17 2016-09-21 Instytut Technologii Materialów Elektronicznych A Hall effect element
EP3106432B1 (de) * 2015-06-18 2017-07-19 Bundesrepublik Deutschland, vertreten durch das Bundesmisterium für Wirtschaft und Energie, endvertreten durch den Präsidenten der PTB Verfahren zum herstellen von graphen
US10850496B2 (en) 2016-02-09 2020-12-01 Global Graphene Group, Inc. Chemical-free production of graphene-reinforced inorganic matrix composites
EP3222580A1 (en) 2016-03-21 2017-09-27 Instytut Technologii Materialów Elektronicznych Method for passivating graphene
JP6720067B2 (ja) * 2016-04-19 2020-07-08 住友電気工業株式会社 グラフェントランジスタおよびその製造方法
CN107845567A (zh) * 2017-09-25 2018-03-27 重庆文理学院 石墨烯双异质结及其制备方法
CN107500277B (zh) * 2017-09-27 2019-12-24 中国科学院上海微系统与信息技术研究所 石墨烯边界调控方法
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CN109437148B (zh) * 2018-11-02 2020-10-02 山东天岳先进材料科技有限公司 由碳化硅长晶剩料制备高纯碳材料的方法
CN109852944B (zh) * 2019-01-25 2020-08-04 中国科学院半导体研究所 基于微波等离子体化学气相沉积的石墨烯制备方法
CN110184585B (zh) * 2019-06-25 2023-04-18 福建闽烯科技有限公司 一种石墨烯铜粉的制备方法及装置
WO2021156196A1 (en) * 2020-02-03 2021-08-12 Cealtech As Process and device for large-scale production of graphene
CN112978718B (zh) * 2021-03-12 2022-04-12 上海瑟赫新材料科技有限公司 一种石墨烯制备用反应炉
KR102675622B1 (ko) * 2021-12-30 2024-06-17 한국세라믹기술원 입실론 갈륨 옥사이드 에피택셜 기판 제조 방법 및 그에 의해 제조된 입실론 갈륨 옥사이드 에피택셜 기판
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Also Published As

Publication number Publication date
CN102933491B (zh) 2016-02-17
EP2392547A2 (en) 2011-12-07
CN102933491A (zh) 2013-02-13
EP2392547B1 (en) 2018-12-26
JP2011256100A (ja) 2011-12-22
PL213291B1 (pl) 2013-02-28
WO2011155858A2 (en) 2011-12-15
KR101465452B1 (ko) 2014-11-26
JP5662249B2 (ja) 2015-01-28
KR20130040904A (ko) 2013-04-24
EP2392547A3 (en) 2012-01-04
WO2011155858A3 (en) 2012-03-01
DK2392547T3 (en) 2019-04-15
US20110300058A1 (en) 2011-12-08
US9067796B2 (en) 2015-06-30

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