PL3930013T3 - Sposób wytwarzania fotowoltaicznego ogniwa słonecznego z co najmniej jednym heterozłączem - Google Patents
Sposób wytwarzania fotowoltaicznego ogniwa słonecznego z co najmniej jednym heterozłączemInfo
- Publication number
- PL3930013T3 PL3930013T3 PL21191337.1T PL21191337T PL3930013T3 PL 3930013 T3 PL3930013 T3 PL 3930013T3 PL 21191337 T PL21191337 T PL 21191337T PL 3930013 T3 PL3930013 T3 PL 3930013T3
- Authority
- PL
- Poland
- Prior art keywords
- heterojunction
- producing
- solar cell
- photovoltaic solar
- photovoltaic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/94—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013219561.3A DE102013219561A1 (de) | 2013-09-27 | 2013-09-27 | Verfahren zum Herstellen einer photovoltaischen Solarzelle mit zumindest einem Heteroübergang |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3930013T3 true PL3930013T3 (pl) | 2024-06-24 |
Family
ID=51582411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL21191337.1T PL3930013T3 (pl) | 2013-09-27 | 2014-09-22 | Sposób wytwarzania fotowoltaicznego ogniwa słonecznego z co najmniej jednym heterozłączem |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9716204B2 (pl) |
| EP (2) | EP3050124B1 (pl) |
| DE (1) | DE102013219561A1 (pl) |
| ES (2) | ES2976484T3 (pl) |
| HR (1) | HRP20240417T1 (pl) |
| PL (1) | PL3930013T3 (pl) |
| WO (1) | WO2015044070A1 (pl) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599450A (zh) | 2013-04-03 | 2019-04-09 | Lg电子株式会社 | 太阳能电池 |
| KR101867855B1 (ko) | 2014-03-17 | 2018-06-15 | 엘지전자 주식회사 | 태양 전지 |
| KR102219804B1 (ko) | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
| US9722104B2 (en) | 2014-11-28 | 2017-08-01 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| KR102272433B1 (ko) | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| NL2015534B1 (en) * | 2015-09-30 | 2017-05-10 | Tempress Ip B V | Method of manufacturing a solar cell. |
| US20170236972A1 (en) * | 2016-02-12 | 2017-08-17 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
| CN105845761A (zh) * | 2016-04-29 | 2016-08-10 | 常州大学 | 一种接触钝化晶体硅太阳能电池的结构及制备方法 |
| FR3051074B1 (fr) * | 2016-05-03 | 2018-05-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une cellule photovoltaique a heterojonction |
| JP6414159B2 (ja) * | 2016-07-29 | 2018-10-31 | トヨタ自動車株式会社 | 半導体装置およびその製造方法 |
| JP6655791B2 (ja) * | 2016-08-25 | 2020-02-26 | パナソニックＩｐマネジメント株式会社 | 太陽電池セル及びその製造方法 |
| EP3336905B1 (en) * | 2016-10-25 | 2020-12-02 | Shin-Etsu Chemical Co., Ltd | Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency |
| PT3321973T (pt) * | 2016-11-09 | 2021-03-16 | Meyer Burger Germany Ag | Célula solar cristalina com uma camada transparente e condutora entre os contactos de lado dianteiro e procedimento para fabrico de uma tal célula solar |
| NL2017872B1 (en) * | 2016-11-25 | 2018-06-08 | Stichting Energieonderzoek Centrum Nederland | Photovoltaic cell with passivating contact |
| CN110199376A (zh) * | 2016-12-06 | 2019-09-03 | 澳大利亚国立大学 | 太阳能电池制造 |
| WO2018168785A1 (ja) * | 2017-03-13 | 2018-09-20 | 国立大学法人北陸先端科学技術大学院大学 | ヘテロ接合型太陽電池の製造方法、ヘテロ接合型太陽電池およびヘテロ接合型結晶シリコン電子デバイス |
| CN108899374B (zh) * | 2017-05-15 | 2020-02-18 | 中国科学院微电子研究所 | 一种硅基太阳能电池及其制备方法 |
| US10693030B2 (en) | 2018-01-15 | 2020-06-23 | Industrial Technology Research Institute | Solar cell |
| JP2020167228A (ja) * | 2019-03-28 | 2020-10-08 | 株式会社アルバック | 結晶太陽電池の製造方法 |
| CN113748522B (zh) | 2019-03-29 | 2025-01-17 | 迈可晟太阳能有限公司 | 具有包括区分开的p型和n型区与偏置触点的混合结构的太阳能电池 |
| KR20210010095A (ko) | 2019-07-19 | 2021-01-27 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| CN112071951B (zh) * | 2020-08-31 | 2022-06-14 | 晶澳（扬州）太阳能科技有限公司 | 一种太阳能电池的制备方法和太阳能电池 |
| CN115274871B (zh) * | 2021-04-30 | 2024-04-02 | 泰州中来光电科技有限公司 | 一种应用于隧穿型太阳能电池上的接触结构、带有该接触结构的太阳能电池及其制造方法 |
| CN113972300A (zh) * | 2021-10-20 | 2022-01-25 | 晶澳（扬州）太阳能科技有限公司 | 一种太阳能电池以及太阳能电池的制备方法 |
| CN115985991B (zh) * | 2022-12-22 | 2024-08-20 | 通威太阳能（成都）有限公司 | 太阳电池及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7468485B1 (en) | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
| US7851698B2 (en) | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
| DE102008030693A1 (de) | 2008-07-01 | 2010-01-14 | Institut Für Solarenergieforschung Gmbh | Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil |
| US8242354B2 (en) | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| EP4350782A3 (en) | 2009-04-21 | 2024-07-10 | Tetrasun, Inc. | High-efficiency solar cell structures and methods of manufacture |
| US8772068B2 (en) * | 2009-10-26 | 2014-07-08 | Newsouth Innovations Pty Limited | Metallization method for silicon solar cells |
| KR101103330B1 (ko) * | 2010-06-25 | 2012-01-11 | 한국표준과학연구원 | ＩｎＰ의 강제도핑에 의한 고농도 Ｐ 도핑 양자점 태양전지 및 제조방법 |
| US20120073650A1 (en) | 2010-09-24 | 2012-03-29 | David Smith | Method of fabricating an emitter region of a solar cell |
| US9276163B2 (en) * | 2010-10-14 | 2016-03-01 | Kaneka Corporation | Method for manufacturing silicon-based solar cell |
| DE102011001937A1 (de) * | 2011-04-11 | 2012-10-11 | Roth & Rau Ag | Siliziumsolarzelle mit einem Heterojunction-pn-Übergang und Verfahren zu deren Herstellung |
| KR101918737B1 (ko) | 2012-03-19 | 2019-02-08 | 엘지전자 주식회사 | 태양 전지 |
-
2013
- 2013-09-27 DE DE102013219561.3A patent/DE102013219561A1/de active Pending
-
2014
- 2014-09-22 ES ES21191337T patent/ES2976484T3/es active Active
- 2014-09-22 EP EP14771325.9A patent/EP3050124B1/de active Active
- 2014-09-22 WO PCT/EP2014/070089 patent/WO2015044070A1/de not_active Ceased
- 2014-09-22 EP EP21191337.1A patent/EP3930013B1/de active Active
- 2014-09-22 US US15/022,092 patent/US9716204B2/en active Active
- 2014-09-22 ES ES14771325T patent/ES2900817T3/es active Active
- 2014-09-22 PL PL21191337.1T patent/PL3930013T3/pl unknown
- 2014-09-22 HR HRP20240417TT patent/HRP20240417T1/hr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| HRP20240417T1 (hr) | 2024-06-21 |
| ES2976484T3 (es) | 2024-08-02 |
| WO2015044070A1 (de) | 2015-04-02 |
| EP3930013C0 (de) | 2024-01-31 |
| US20160225938A1 (en) | 2016-08-04 |
| EP3930013A1 (de) | 2021-12-29 |
| EP3930013B1 (de) | 2024-01-31 |
| EP3050124B1 (de) | 2021-09-29 |
| EP3050124A1 (de) | 2016-08-03 |
| ES2900817T3 (es) | 2022-03-18 |
| DE102013219561A1 (de) | 2015-04-02 |
| US9716204B2 (en) | 2017-07-25 |
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