PL3960911T3 - Sposób wytwarzania bloku węglika krzemu - Google Patents

Sposób wytwarzania bloku węglika krzemu

Info

Publication number
PL3960911T3
PL3960911T3 PL21192965.8T PL21192965T PL3960911T3 PL 3960911 T3 PL3960911 T3 PL 3960911T3 PL 21192965 T PL21192965 T PL 21192965T PL 3960911 T3 PL3960911 T3 PL 3960911T3
Authority
PL
Poland
Prior art keywords
manufacturing
silicon carbide
carbide block
block
silicon
Prior art date
Application number
PL21192965.8T
Other languages
English (en)
Inventor
Jong Hwi Park
Kap-Ryeol KU
Jung-Gyu Kim
Jung Woo Choi
Sang Ki Ko
Byung Kyu Jang
Eun Su Yang
Jung Doo Seo
Original Assignee
Senic Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020200110065A external-priority patent/KR102239736B1/ko
Priority claimed from KR1020200162868A external-priority patent/KR102245213B1/ko
Application filed by Senic Inc. filed Critical Senic Inc.
Publication of PL3960911T3 publication Critical patent/PL3960911T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
PL21192965.8T 2020-08-31 2021-08-25 Sposób wytwarzania bloku węglika krzemu PL3960911T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020200110065A KR102239736B1 (ko) 2020-08-31 2020-08-31 탄화규소 잉곳의 제조방법 및 이에 따라 제조된 탄화규소 잉곳
KR1020200162868A KR102245213B1 (ko) 2020-11-27 2020-11-27 탄화규소 잉곳의 제조방법 및 탄화규소 잉곳 제조 시스템

Publications (1)

Publication Number Publication Date
PL3960911T3 true PL3960911T3 (pl) 2024-08-19

Family

ID=77499680

Family Applications (1)

Application Number Title Priority Date Filing Date
PL21192965.8T PL3960911T3 (pl) 2020-08-31 2021-08-25 Sposób wytwarzania bloku węglika krzemu

Country Status (7)

Country Link
US (2) US11339497B2 (pl)
EP (2) EP4163423A1 (pl)
JP (1) JP7057014B2 (pl)
CN (1) CN114108077B (pl)
HU (1) HUE067757T2 (pl)
PL (1) PL3960911T3 (pl)
TW (1) TWI765810B (pl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT524251B1 (de) * 2020-09-28 2023-04-15 Ebner Ind Ofenbau Vorrichtung zum Züchten von Einkristallen
KR102321229B1 (ko) 2021-03-30 2021-11-03 주식회사 쎄닉 탄화규소 웨이퍼 및 이를 적용한 반도체 소자
TWI762351B (zh) * 2021-06-08 2022-04-21 環球晶圓股份有限公司 碳化矽晶圓及其研磨方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001245270A1 (en) 2000-02-15 2001-09-03 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
JP3961750B2 (ja) 2000-08-21 2007-08-22 独立行政法人産業技術総合研究所 単結晶の成長装置および成長方法
JP2006096578A (ja) 2004-09-28 2006-04-13 Nippon Steel Corp 炭化珪素単結晶の製造方法及び炭化珪素単結晶インゴット
US7422634B2 (en) 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
JP2007204309A (ja) 2006-02-01 2007-08-16 Matsushita Electric Ind Co Ltd 単結晶成長装置及び単結晶成長方法
JP2008110907A (ja) 2006-10-31 2008-05-15 Nippon Steel Corp 炭化珪素単結晶インゴットの製造方法及び炭化珪素単結晶インゴット
JP2010515661A (ja) 2007-01-16 2010-05-13 トゥー‐シックス・インコーポレイテッド 多層成長ガイドを用いた誘導直径ＳｉＣ昇華成長
WO2008134568A2 (en) 2007-04-25 2008-11-06 Kagan Ceran Deposition of high-purity silicon via high-surface area gas-solid or gas-liquid interfaces and recovery via liqued phase
JP5143139B2 (ja) 2007-11-08 2013-02-13 パナソニック株式会社 単結晶成長装置
JP2010111521A (ja) 2008-11-04 2010-05-20 Bridgestone Corp 炭化珪素単結晶の製造装置及び炭化珪素単結晶の製造方法
JP5779171B2 (ja) * 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
JP2010241628A (ja) 2009-04-03 2010-10-28 Bridgestone Corp 炭化珪素単結晶の製造装置
JP5526866B2 (ja) * 2010-03-02 2014-06-18 住友電気工業株式会社 炭化珪素結晶の製造方法および炭化珪素結晶の製造装置
JP5381957B2 (ja) 2010-10-27 2014-01-08 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
KR20130000294A (ko) 2011-06-22 2013-01-02 엘지이노텍 주식회사 잉곳 제조 장치
EP2752508A4 (en) 2011-08-29 2015-02-25 Nippon Steel & Sumitomo Metal Corp SILICON CARBIDE CRYSTAL WAFERS AND MANUFACTURING METHOD THEREFOR
JP5699963B2 (ja) 2012-02-16 2015-04-15 三菱電機株式会社 単結晶の製造方法および製造装置
KR101372710B1 (ko) 2012-05-04 2014-03-12 재단법인 포항산업과학연구원 대구경 단결정 성장장치 및 이를 이용하는 성장방법
JP5668724B2 (ja) 2012-06-05 2015-02-12 トヨタ自動車株式会社 ＳｉＣ単結晶のインゴット、ＳｉＣ単結晶、及び製造方法
KR101339377B1 (ko) 2012-06-19 2013-12-09 주식회사 인솔텍 실리콘 잉곳 제조장치 및 이를 이용한 잉곳 제조방법
JP6033650B2 (ja) 2012-11-19 2016-11-30 株式会社豊田中央研究所 単結晶製造装置、および単結晶の製造方法
US9657409B2 (en) * 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
JP6489191B2 (ja) 2013-09-25 2019-03-27 住友電気工業株式会社 炭化珪素半導体基板
JP2015224169A (ja) 2014-05-29 2015-12-14 住友電気工業株式会社 炭化珪素インゴットの製造方法
JP6223290B2 (ja) 2014-06-27 2017-11-01 三菱電機株式会社 単結晶の製造装置
KR101640313B1 (ko) 2014-11-14 2016-07-18 오씨아이 주식회사 잉곳 제조 장치
JP6489891B2 (ja) 2015-03-24 2019-03-27 昭和電工株式会社 昇華再結晶法に用いるＳｉＣ原料の製造方法
CN107208310B (zh) 2015-03-24 2019-10-11 昭和电工株式会社 碳化硅单晶的制造方法
US20170137962A1 (en) * 2015-11-16 2017-05-18 National Chung-Shan Institute Of Science And Technology Fabrication Method for Growing Single Crystal of Multi-Type Compound
KR101744287B1 (ko) 2015-12-17 2017-06-08 재단법인 포항산업과학연구원 탄화규소(SiC) 단결정 성장 장치
KR101742103B1 (ko) 2015-12-29 2017-05-31 주식회사 알앤비 단열재 균열방지를 위한 가열로용 커버부재 및 이를 장착한 가열로
KR101760030B1 (ko) 2016-03-02 2017-08-01 한국세라믹기술원 대구경 탄화규소 단결정 성장 장치로부터 소구경 탄화규소 단결정을 성장시키는 방법 및 장치
JP6742183B2 (ja) 2016-07-25 2020-08-19 昭和電工株式会社 炭化珪素単結晶インゴットの製造方法
CN106906515A (zh) 2017-04-20 2017-06-30 山东大学 一种能实现温度场实时调整的SiC单晶生长装置及利用该装置生长SiC单晶的方法
JP2019091798A (ja) 2017-11-14 2019-06-13 昭和電工株式会社 ＳｉＣエピタキシャルウェハ
JP7030506B2 (ja) * 2017-12-22 2022-03-07 昭和電工株式会社 炭化珪素単結晶インゴットの製造方法
JP6986960B2 (ja) 2017-12-28 2021-12-22 昭和電工株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶の製造方法
KR102109805B1 (ko) 2018-08-10 2020-05-12 에스케이씨 주식회사 탄화규소 단결정 잉곳 성장 장치
KR102202447B1 (ko) 2018-12-18 2021-01-14 주식회사 포스코 탄화규소 단결정 성장장치
KR102104751B1 (ko) 2019-06-17 2020-04-24 에스케이씨 주식회사 탄화규소 잉곳 및 이의 제조방법
KR102245213B1 (ko) * 2020-11-27 2021-04-26 에스케이씨 주식회사 탄화규소 잉곳의 제조방법 및 탄화규소 잉곳 제조 시스템
KR102239736B1 (ko) * 2020-08-31 2021-04-13 에스케이씨 주식회사 탄화규소 잉곳의 제조방법 및 이에 따라 제조된 탄화규소 잉곳

Also Published As

Publication number Publication date
EP3960911B1 (en) 2024-06-12
US20220220632A1 (en) 2022-07-14
US20220064817A1 (en) 2022-03-03
TWI765810B (zh) 2022-05-21
JP2022041903A (ja) 2022-03-11
EP4163423A1 (en) 2023-04-12
HUE067757T2 (hu) 2024-11-28
TW202210667A (zh) 2022-03-16
JP7057014B2 (ja) 2022-04-19
US11339497B2 (en) 2022-05-24
EP3960911A1 (en) 2022-03-02
CN114108077B (zh) 2024-04-05
CN114108077A (zh) 2022-03-01

Similar Documents

Publication Publication Date Title
PL3960911T3 (pl) Sposób wytwarzania bloku węglika krzemu
EP4254503A4 (en) CELLULAR STRUCTURE OF SILICON CARBIDE DEVICE, PREPARATION METHOD THEREOF, AND SILICON CARBIDE DEVICE
PL3940122T3 (pl) Sposób wytwarzania wafla SiC
PL4063374T3 (pl) Sposób wytwarzania l-glufosynatu
EP3760581A4 (en) METHOD FOR MANUFACTURING SILICON NITRIDE POWDER
EP4282848A4 (en) Preparation method for copper plate-covered silicon nitride ceramic substrate
KR102737019B9 (ko) 에칭 방법
EP3828318A4 (en) SIC WAFER AND MANUFACTURING PROCESS FOR SIC WAFER
EA202100102A1 (ru) СПОСОБ ПОЛУЧЕНИЯ МОНОКРИСТАЛЛИЧЕСКОГО SiC
PL4046129T3 (pl) Sposób wytwarzania
LT4157831T (lt) Jak1 inhibitoriaus gamybos būdas
PL4126862T3 (pl) Sposób wytwarzania związku będącego inhibitorem cot
EP4089720A4 (en) METHOD FOR PRODUCING AN EPITACTIC WAFER AND EPITACTIC WAFER
PL3942107T3 (pl) Sposób wytwarzania
PL4126854T3 (pl) Sposób wytwarzania inhibitorów ferroportyny
EP4481794A4 (en) ENGRAVING PROCESS
EP4421219A4 (en) Monocrystalline silicon substrate and its production process
EP4110977A4 (en) PLASMA SHAPING FOR DIAMOND GROWTH
EP4163955C0 (en) METHOD FOR MANUFACTURING SIC SEMICONDUCTOR ELEMENT AND SIC SEMICONDUCTOR ELEMENT
EP4447093A4 (en) Wafer manufacturing method
EP4433683A4 (en) DOWNHOLE VIBRATION TOOL
EP4266354C0 (en) SIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
EP4481795A4 (en) ENGRAVING PROCESS
GB2601404B (en) Method of preparing a silicon carbide wafer
IL290312A (en) Etching method for silicon nitride and production method for semiconductor element