PL3970209T3 - Urządzenie fotowoltaiczne - Google Patents

Urządzenie fotowoltaiczne

Info

Publication number
PL3970209T3
PL3970209T3 PL20728150.2T PL20728150T PL3970209T3 PL 3970209 T3 PL3970209 T3 PL 3970209T3 PL 20728150 T PL20728150 T PL 20728150T PL 3970209 T3 PL3970209 T3 PL 3970209T3
Authority
PL
Poland
Prior art keywords
photovoltaic device
photovoltaic
Prior art date
Application number
PL20728150.2T
Other languages
English (en)
Inventor
Ben Williams
Nicola BEAUMONT
Edward James William CROSSLAND
Original Assignee
Oxford Photovoltaics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Photovoltaics Limited filed Critical Oxford Photovoltaics Limited
Publication of PL3970209T3 publication Critical patent/PL3970209T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
PL20728150.2T 2019-05-16 2020-05-14 Urządzenie fotowoltaiczne PL3970209T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1906926.9A GB2583965A (en) 2019-05-16 2019-05-16 Photovoltaic device
PCT/GB2020/051173 WO2020229826A1 (en) 2019-05-16 2020-05-14 Photovoltaic device

Publications (1)

Publication Number Publication Date
PL3970209T3 true PL3970209T3 (pl) 2024-06-10

Family

ID=67385252

Family Applications (1)

Application Number Title Priority Date Filing Date
PL20728150.2T PL3970209T3 (pl) 2019-05-16 2020-05-14 Urządzenie fotowoltaiczne

Country Status (10)

Country Link
US (2) US12349530B2 (pl)
EP (1) EP3970209B1 (pl)
JP (2) JP2022533037A (pl)
KR (1) KR102762334B1 (pl)
CN (1) CN114424356A (pl)
AU (1) AU2020274424B2 (pl)
ES (1) ES2978894T3 (pl)
GB (1) GB2583965A (pl)
PL (1) PL3970209T3 (pl)
WO (1) WO2020229826A1 (pl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12252784B2 (en) * 2019-06-12 2025-03-18 President And Fellows Of Harvard College Copper halide layers
ES2991273T3 (es) 2021-12-19 2024-12-03 Imec Vzw Formación de dispositivos optoelectrónicos basados en perovskita
TWI831655B (zh) * 2023-03-21 2024-02-01 明志科技大學 多元陽離子摻雜的鈣鈦礦化合物及鈣鈦礦太陽能電池
WO2025109103A1 (fr) * 2023-11-23 2025-05-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure photovoltaïque tandem de type pin à base de pérovskite comportant une couche tampon en alo x

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3468485B2 (ja) * 1995-05-29 2003-11-17 松下電器産業株式会社 薄膜太陽電池
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
PL4102586T3 (pl) * 2012-09-18 2024-11-12 Oxford University Innovation Limited Urządzenie optoelektroniczne
JP5783984B2 (ja) 2012-09-26 2015-09-24 株式会社東芝 光電変換素子と太陽電池及びこれらの製造方法
US9416279B2 (en) * 2013-11-26 2016-08-16 Hunt Energy Enterprises, L.L.C. Bi- and tri-layer interfacial layers in perovskite material devices
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
KR20160046092A (ko) * 2014-10-20 2016-04-28 영남대학교 산학협력단 태양전지 및 그 제조 방법
EP3221898B1 (en) * 2014-11-21 2020-05-27 Hunt Perovskite Technologies, L.L.C. Bi-and tri-layer interfacial layers in perovskite material devices
CN105428438B (zh) * 2015-05-18 2017-03-08 北京科技大学 一种高效钙钛矿太阳能电池及其制备方法
KR102164354B1 (ko) * 2015-06-12 2020-10-12 옥스퍼드 포토발테익스 리미티드 광기전 디바이스
US9773991B2 (en) * 2015-08-05 2017-09-26 Uchicago Argonne, Llc Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization
KR101793640B1 (ko) 2015-09-24 2017-11-20 재단법인대구경북과학기술원 인듐을 이용한 태양전지용 czts계 흡수층 박막, 이의 제조방법 및 이를 이용한 태양전지
CN108292688B (zh) * 2015-10-22 2021-09-07 小利兰·斯坦福大学理事会 含氧化物纳米颗粒缓冲层的太阳能电池和制造方法
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
JP7768664B2 (ja) 2016-07-07 2025-11-12 ネーデルランツェ・オルガニザーティ・フォール・トゥーヘパストナトゥールウェテンシャッペレイク・オンダーズーク・テーエヌオー 太陽電池用のペロブスカイトに接触する不動態化バリア層
US11296244B2 (en) * 2016-09-20 2022-04-05 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising a metal-oxide buffer layer and method of fabrication
US20180174762A1 (en) * 2016-12-16 2018-06-21 Uchicago Argonne, Llc Hybrid organic-inorganic electron selective overlayers for halide perovoskites
CN206758471U (zh) * 2017-06-06 2017-12-15 辽宁工业大学 一种钙钛矿太阳能电池

Also Published As

Publication number Publication date
KR102762334B1 (ko) 2025-02-03
EP3970209B1 (en) 2024-02-14
KR20220045107A (ko) 2022-04-12
JP2025098100A (ja) 2025-07-01
JP2022533037A (ja) 2022-07-21
US20220246872A1 (en) 2022-08-04
ES2978894T3 (es) 2024-09-23
AU2020274424A1 (en) 2021-11-18
US12349530B2 (en) 2025-07-01
WO2020229826A1 (en) 2020-11-19
AU2020274424B2 (en) 2025-06-05
CN114424356A (zh) 2022-04-29
US20250287769A1 (en) 2025-09-11
EP3970209A1 (en) 2022-03-23
GB2583965A (en) 2020-11-18
GB201906926D0 (en) 2019-07-03

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