PL3970209T3 - Urządzenie fotowoltaiczne - Google Patents
Urządzenie fotowoltaiczneInfo
- Publication number
- PL3970209T3 PL3970209T3 PL20728150.2T PL20728150T PL3970209T3 PL 3970209 T3 PL3970209 T3 PL 3970209T3 PL 20728150 T PL20728150 T PL 20728150T PL 3970209 T3 PL3970209 T3 PL 3970209T3
- Authority
- PL
- Poland
- Prior art keywords
- photovoltaic device
- photovoltaic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1906926.9A GB2583965A (en) | 2019-05-16 | 2019-05-16 | Photovoltaic device |
| PCT/GB2020/051173 WO2020229826A1 (en) | 2019-05-16 | 2020-05-14 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3970209T3 true PL3970209T3 (pl) | 2024-06-10 |
Family
ID=67385252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL20728150.2T PL3970209T3 (pl) | 2019-05-16 | 2020-05-14 | Urządzenie fotowoltaiczne |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US12349530B2 (pl) |
| EP (1) | EP3970209B1 (pl) |
| JP (2) | JP2022533037A (pl) |
| KR (1) | KR102762334B1 (pl) |
| CN (1) | CN114424356A (pl) |
| AU (1) | AU2020274424B2 (pl) |
| ES (1) | ES2978894T3 (pl) |
| GB (1) | GB2583965A (pl) |
| PL (1) | PL3970209T3 (pl) |
| WO (1) | WO2020229826A1 (pl) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020252342A2 (en) * | 2019-06-12 | 2020-12-17 | President And Fellows Of Harvard College | Copper halide layers |
| EP4199126B1 (en) * | 2021-12-19 | 2024-07-31 | Imec Vzw | Forming of perovskite-based optoelectronic devices |
| TWI831655B (zh) * | 2023-03-21 | 2024-02-01 | 明志科技大學 | 多元陽離子摻雜的鈣鈦礦化合物及鈣鈦礦太陽能電池 |
| WO2025109103A1 (fr) * | 2023-11-23 | 2025-05-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure photovoltaïque tandem de type pin à base de pérovskite comportant une couche tampon en alo x |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3468485B2 (ja) * | 1995-05-29 | 2003-11-17 | 松下電器産業株式会社 | 薄膜太陽電池 |
| GB201208793D0 (en) | 2012-05-18 | 2012-07-04 | Isis Innovation | Optoelectronic device |
| ES2989735T3 (es) | 2012-09-18 | 2024-11-27 | Univ Oxford Innovation Ltd | Dispositivo optoelectrónico |
| JP5783984B2 (ja) * | 2012-09-26 | 2015-09-24 | 株式会社東芝 | 光電変換素子と太陽電池及びこれらの製造方法 |
| US9416279B2 (en) * | 2013-11-26 | 2016-08-16 | Hunt Energy Enterprises, L.L.C. | Bi- and tri-layer interfacial layers in perovskite material devices |
| GB201412201D0 (en) | 2014-07-09 | 2014-08-20 | Isis Innovation | Two-step deposition process |
| KR20160046092A (ko) * | 2014-10-20 | 2016-04-28 | 영남대학교 산학협력단 | 태양전지 및 그 제조 방법 |
| AU2015349902B2 (en) * | 2014-11-21 | 2017-11-23 | Cubicpv Inc. | Bi-and tri-layer interfacial layers in perovskite material devices |
| CN105428438B (zh) * | 2015-05-18 | 2017-03-08 | 北京科技大学 | 一种高效钙钛矿太阳能电池及其制备方法 |
| WO2016198889A1 (en) * | 2015-06-12 | 2016-12-15 | Oxford Photovoltaics Limited | Photovoltaic device |
| US9773991B2 (en) * | 2015-08-05 | 2017-09-26 | Uchicago Argonne, Llc | Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization |
| KR101793640B1 (ko) * | 2015-09-24 | 2017-11-20 | 재단법인대구경북과학기술원 | 인듐을 이용한 태양전지용 czts계 흡수층 박막, 이의 제조방법 및 이를 이용한 태양전지 |
| WO2017083077A1 (en) * | 2015-10-22 | 2017-05-18 | The Board Of Trustees Of The Leland Stanford Junior University | Solar cell comprising an oxide-nanoparticle buffer layer and method of fabrication |
| GB201520972D0 (en) | 2015-11-27 | 2016-01-13 | Isis Innovation | Mixed cation perovskite |
| JP7768664B2 (ja) | 2016-07-07 | 2025-11-12 | ネーデルランツェ・オルガニザーティ・フォール・トゥーヘパストナトゥールウェテンシャッペレイク・オンダーズーク・テーエヌオー | 太陽電池用のペロブスカイトに接触する不動態化バリア層 |
| US11296244B2 (en) * | 2016-09-20 | 2022-04-05 | The Board Of Trustees Of The Leland Stanford Junior University | Solar cell comprising a metal-oxide buffer layer and method of fabrication |
| US20180174762A1 (en) * | 2016-12-16 | 2018-06-21 | Uchicago Argonne, Llc | Hybrid organic-inorganic electron selective overlayers for halide perovoskites |
| CN206758471U (zh) * | 2017-06-06 | 2017-12-15 | 辽宁工业大学 | 一种钙钛矿太阳能电池 |
-
2019
- 2019-05-16 GB GB1906926.9A patent/GB2583965A/en not_active Withdrawn
-
2020
- 2020-05-14 PL PL20728150.2T patent/PL3970209T3/pl unknown
- 2020-05-14 KR KR1020217041368A patent/KR102762334B1/ko active Active
- 2020-05-14 WO PCT/GB2020/051173 patent/WO2020229826A1/en not_active Ceased
- 2020-05-14 ES ES20728150T patent/ES2978894T3/es active Active
- 2020-05-14 AU AU2020274424A patent/AU2020274424B2/en active Active
- 2020-05-14 CN CN202080048531.1A patent/CN114424356A/zh active Pending
- 2020-05-14 EP EP20728150.2A patent/EP3970209B1/en active Active
- 2020-05-14 JP JP2021565922A patent/JP2022533037A/ja active Pending
- 2020-05-14 US US17/611,616 patent/US12349530B2/en active Active
-
2025
- 2025-03-19 JP JP2025044220A patent/JP2025098100A/ja active Pending
- 2025-05-22 US US19/216,217 patent/US20250287769A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025098100A (ja) | 2025-07-01 |
| EP3970209B1 (en) | 2024-02-14 |
| ES2978894T3 (es) | 2024-09-23 |
| EP3970209A1 (en) | 2022-03-23 |
| GB201906926D0 (en) | 2019-07-03 |
| GB2583965A (en) | 2020-11-18 |
| US20250287769A1 (en) | 2025-09-11 |
| US12349530B2 (en) | 2025-07-01 |
| KR20220045107A (ko) | 2022-04-12 |
| AU2020274424B2 (en) | 2025-06-05 |
| WO2020229826A1 (en) | 2020-11-19 |
| JP2022533037A (ja) | 2022-07-21 |
| KR102762334B1 (ko) | 2025-02-03 |
| US20220246872A1 (en) | 2022-08-04 |
| CN114424356A (zh) | 2022-04-29 |
| AU2020274424A1 (en) | 2021-11-18 |
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