PL398153A1 - Sposób wytwarzania pólprzewodnikowych laserów kaskadowych - Google Patents

Sposób wytwarzania pólprzewodnikowych laserów kaskadowych

Info

Publication number
PL398153A1
PL398153A1 PL398153A PL39815312A PL398153A1 PL 398153 A1 PL398153 A1 PL 398153A1 PL 398153 A PL398153 A PL 398153A PL 39815312 A PL39815312 A PL 39815312A PL 398153 A1 PL398153 A1 PL 398153A1
Authority
PL
Poland
Prior art keywords
semiconductor cascade
cascade lasers
producing semiconductor
layers
parameters
Prior art date
Application number
PL398153A
Other languages
English (en)
Inventor
Marek Wesolowski
Włodzimierz Strupiński
Original Assignee
Isos Technologies Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isos Technologies Sarl filed Critical Isos Technologies Sarl
Priority to PL398153A priority Critical patent/PL398153A1/pl
Priority to PCT/EP2013/053063 priority patent/WO2013120988A1/en
Publication of PL398153A1 publication Critical patent/PL398153A1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Sposób wytwarzania pólprzewodnikowych laserów kaskadowych z warstwami naprezonymi polega na tym, ze obejmuje wykonanie okreslonych warstw testowych, ich pomiary, wyznaczenie parametrów procesu wzrostu epitaksjalnego warstw w oparciu o te pomiary oraz wykonanie pólprzewodnikowego lasera kaskadowego metodami epitaksjalnymi z wykorzystaniem parametrów wzrostu epitaksjalnego.
PL398153A 2012-02-17 2012-02-17 Sposób wytwarzania pólprzewodnikowych laserów kaskadowych PL398153A1 (pl)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PL398153A PL398153A1 (pl) 2012-02-17 2012-02-17 Sposób wytwarzania pólprzewodnikowych laserów kaskadowych
PCT/EP2013/053063 WO2013120988A1 (en) 2012-02-17 2013-02-15 Method of semiconductor quantum cascade lasers manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL398153A PL398153A1 (pl) 2012-02-17 2012-02-17 Sposób wytwarzania pólprzewodnikowych laserów kaskadowych

Publications (1)

Publication Number Publication Date
PL398153A1 true PL398153A1 (pl) 2013-08-19

Family

ID=47843248

Family Applications (1)

Application Number Title Priority Date Filing Date
PL398153A PL398153A1 (pl) 2012-02-17 2012-02-17 Sposób wytwarzania pólprzewodnikowych laserów kaskadowych

Country Status (2)

Country Link
PL (1) PL398153A1 (pl)
WO (1) WO2013120988A1 (pl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115020268A (zh) * 2022-08-09 2022-09-06 华灿光电（浙江）有限公司 InP生长速率测量方法及装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112730549A (zh) * 2021-01-13 2021-04-30 福建中科光芯光电科技有限公司 一种提高半导体掺杂浓度测试精度的方法
CN117558644B (zh) * 2023-12-21 2024-03-26 苏州焜原光电有限公司 标定InGaxAs/InAsSby超晶格组分的方法
CN119315373B (zh) * 2024-12-13 2025-03-25 苏州长光华芯光电技术股份有限公司 半导体激光器材料的校验方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115020268A (zh) * 2022-08-09 2022-09-06 华灿光电（浙江）有限公司 InP生长速率测量方法及装置

Also Published As

Publication number Publication date
WO2013120988A1 (en) 2013-08-22

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