PL417057A1 - Method for obtaining porous SiC/{C/SiC}/SiC-type composite - Google Patents
Method for obtaining porous SiC/{C/SiC}/SiC-type compositeInfo
- Publication number
- PL417057A1 PL417057A1 PL417057A PL41705716A PL417057A1 PL 417057 A1 PL417057 A1 PL 417057A1 PL 417057 A PL417057 A PL 417057A PL 41705716 A PL41705716 A PL 41705716A PL 417057 A1 PL417057 A1 PL 417057A1
- Authority
- PL
- Poland
- Prior art keywords
- sic
- composite
- temperature
- hours
- subjected
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title abstract 9
- 238000000034 method Methods 0.000 title abstract 2
- 239000011204 carbon fibre-reinforced silicon carbide Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 20
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 4
- 229910052799 carbon Inorganic materials 0.000 abstract 4
- 229920001558 organosilicon polymer Polymers 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000003960 organic solvent Substances 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000001143 conditioned effect Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000000265 homogenisation Methods 0.000 abstract 1
- 239000011858 nanopowder Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
Landscapes
- Ceramic Products (AREA)
- Porous Artificial Stone Or Porous Ceramic Products (AREA)
Abstract
Sposób otrzymywania porowatego kompozytu typu SiC/{C/SiC}/SiC, polega na tym, że kompozyt C/SiC, zawierający nanoproszkowy węglik krzemu SiC i wolny węgiel C, poddaje się mieszaniu z polimerem krzemoorganicznym o średniej masie cząsteczkowej rzędu od 800 do 10000, w obecności rozpuszczalnika organicznego, przy czym zawartość węgla w kompozycie C/SiC wynosi do 50% wagowych, a ilość polimeru krzemoorganicznego w mieszaninie z kompozytem C/SiC wynosi 5 - 80% wagowych. Po homogenizacji z mieszaniny częściowo odparowuje się rozpuszczalnik organiczny, a z uzyskanej masy formuje się drogą prasowania kształtki o pożądanych kształtach. Następnie wytworzone kształtki poddaje się suszeniu, po czym poddaje się je kondycjonowaniu w atmosferze powietrza lub tlenu w temperaturze od 50°C do 300°C, w czasie od 10 minut do 10 godzin. Z kolei kształtki z usieciowanym polimerem krzemoorganicznym poddaje się wygrzewaniu w atmosferze gazu inertnego w zakresie temperatur od 500 do 1700°C z szybkością ogrzewania od 0,5 do 30°C/min, po czym poddaje się je wygrzewaniu w wybranej temperaturze końcowej przez okres od 0,5 do 10 godzin. Uzyskany produkt chłodzi się wraz z piecem do temperatury otoczenia albo przemieszcza się do kolejnych stref o coraz niższych temperaturach, otrzymując mezoporowaty hierarchiczny kompozyt typu SiC/{C/SiC}, w którym cząstki wyjściowego kompozytu C/SiC otoczone są warstewką wtórnego węglika krzemu SiC oraz nadmiarowego węgla, który nie jest pokryty warstewką SiC. W celu usunięcia nadmiarowego węgla produkt poddaje się kontrolowanemu utlenianiu w atmosferze gazu utleniającego w temperaturze od 400 do 1000°C w czasie od 30 minut do 10 godzin albo kontrolowanemu nakrzemowaniu przy użyciu SiO w atmosferze gazu obojętnego lub w próżni w temperaturze od 1000 do 1600°C przez okres od 30 minut do 10 godzin otrzymując mezoporowaty hierarchiczny kompozyt typu SiC/{C/SiC}/SiC, w którym cząstki wyjściowego kompozytu SiC/{C/SiC} otoczone są warstewką wtórnego SiC.The method of obtaining a SiC / {C / SiC} / SiC porous composite is that the C / SiC composite, containing SiC nanopowder silicon carbide and C free carbon, is mixed with an organosilicon polymer with an average molecular weight of 800 to 10,000 , in the presence of an organic solvent, the carbon content of the C / SiC composite is up to 50% by weight, and the amount of organosilicon polymer in the mixture with the C / SiC composite is 5 - 80% by weight. After homogenization, the organic solvent is partially evaporated from the mixture, and the obtained mass is formed by pressing the shaped bodies with the desired shapes. Then, the formed bodies are subjected to drying, after which they are conditioned in an atmosphere of air or oxygen at a temperature of 50 ° C to 300 ° C for 10 minutes to 10 hours. In turn, fittings with crosslinked organosilicon polymer are subjected to soaking in an inert gas atmosphere in the temperature range from 500 to 1700 ° C with a heating rate from 0.5 to 30 ° C / min, after which they are subjected to heating at a selected final temperature for a period of from 0.5 to 10 hours. The resulting product is cooled with the furnace to ambient temperature or moves to subsequent zones with lower temperatures, obtaining a mesoporous hierarchical SiC / {C / SiC} composite in which the particles of the original C / SiC composite are surrounded by a layer of SiC secondary silicon carbide and excess carbon that is not covered with a SiC layer. To remove excess carbon, the product is subjected to controlled oxidation in an atmosphere of oxidizing gas at a temperature of 400 to 1000 ° C for 30 minutes to 10 hours, or controlled siliconization using SiO in an inert gas atmosphere or in a vacuum at a temperature of 1000 to 1600 ° C for a period of 30 minutes to 10 hours to obtain a mesoporous hierarchical SiC / {C / SiC} / SiC type composite in which the particles of the original SiC / {C / SiC} composite are surrounded by a layer of secondary SiC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL417057A PL231705B1 (en) | 2016-04-29 | 2016-04-29 | Method for obtaining porous SiC/{C/SiC}/SiC-type composite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL417057A PL231705B1 (en) | 2016-04-29 | 2016-04-29 | Method for obtaining porous SiC/{C/SiC}/SiC-type composite |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL417057A1 true PL417057A1 (en) | 2016-12-19 |
| PL231705B1 PL231705B1 (en) | 2019-03-29 |
Family
ID=57542512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL417057A PL231705B1 (en) | 2016-04-29 | 2016-04-29 | Method for obtaining porous SiC/{C/SiC}/SiC-type composite |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL231705B1 (en) |
-
2016
- 2016-04-29 PL PL417057A patent/PL231705B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL231705B1 (en) | 2019-03-29 |
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