PL4228012T3 - Dioda elektroluminescencyjna o zmiennej barwie emisji i sposób wytwarzania takiej diody - Google Patents

Dioda elektroluminescencyjna o zmiennej barwie emisji i sposób wytwarzania takiej diody

Info

Publication number
PL4228012T3
PL4228012T3 PL22461577.3T PL22461577T PL4228012T3 PL 4228012 T3 PL4228012 T3 PL 4228012T3 PL 22461577 T PL22461577 T PL 22461577T PL 4228012 T3 PL4228012 T3 PL 4228012T3
Authority
PL
Poland
Prior art keywords
making
light emitting
same
emitting diode
wavelength tunable
Prior art date
Application number
PL22461577.3T
Other languages
English (en)
Inventor
Mikołaj Żak
Henryk TURSKI
Mikołaj Chlipała
Krzesimir NOWAKOWSKI-SZKUDLAREK
Grzegorz Muzioł
Mateusz HAJDEL
Paweł Wolny
Czesław Skierbiszewski
Original Assignee
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Wysokich Ciśnień Polskiej Akademii Nauk filed Critical Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Publication of PL4228012T3 publication Critical patent/PL4228012T3/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/811Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/8215Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/816Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162Current-blocking structures
PL22461577.3T 2022-02-12 2022-06-23 Dioda elektroluminescencyjna o zmiennej barwie emisji i sposób wytwarzania takiej diody PL4228012T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL440375A PL440375A1 (pl) 2022-02-12 2022-02-12 Dioda elektroluminescencyjna o zmiennej barwie emisji i sposób wytwarzania takiej diody

Publications (1)

Publication Number Publication Date
PL4228012T3 true PL4228012T3 (pl) 2025-01-27

Family

ID=83006096

Family Applications (2)

Application Number Title Priority Date Filing Date
PL440375A PL440375A1 (pl) 2022-02-12 2022-02-12 Dioda elektroluminescencyjna o zmiennej barwie emisji i sposób wytwarzania takiej diody
PL22461577.3T PL4228012T3 (pl) 2022-02-12 2022-06-23 Dioda elektroluminescencyjna o zmiennej barwie emisji i sposób wytwarzania takiej diody

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PL440375A PL440375A1 (pl) 2022-02-12 2022-02-12 Dioda elektroluminescencyjna o zmiennej barwie emisji i sposób wytwarzania takiej diody

Country Status (2)

Country Link
EP (1) EP4228012B1 (pl)
PL (2) PL440375A1 (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117457821B (zh) * 2023-12-21 2024-03-08 江西兆驰半导体有限公司 Micro-LED外延片及其制备方法、Micro-LED

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4027609B2 (ja) * 2001-02-13 2007-12-26 独立行政法人科学技術振興機構 発光ダイオードの発光色制御方法
CN101589478B (zh) * 2006-09-08 2013-01-23 新加坡科技研究局 可调波长发光二极管
KR20220058643A (ko) 2015-06-05 2022-05-09 오스텐도 테크놀로지스 인코포레이티드 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체

Also Published As

Publication number Publication date
EP4228012B1 (en) 2024-09-25
EP4228012A1 (en) 2023-08-16
PL440375A1 (pl) 2023-08-14
EP4228012C0 (en) 2024-09-25

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