PL435887A1 - Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego - Google Patents

Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego

Info

Publication number
PL435887A1
PL435887A1 PL435887A PL43588720A PL435887A1 PL 435887 A1 PL435887 A1 PL 435887A1 PL 435887 A PL435887 A PL 435887A PL 43588720 A PL43588720 A PL 43588720A PL 435887 A1 PL435887 A1 PL 435887A1
Authority
PL
Poland
Prior art keywords
layer
photovoltaic cell
electrical contact
deposited
thickness
Prior art date
Application number
PL435887A
Other languages
English (en)
Other versions
PL245092B1 (pl
Inventor
Bartłomiej WITKOWSKI
Marek GODLEWSKi
Monika Ożga
Original Assignee
Instytut Fizyki Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Fizyki Polskiej Akademii Nauk filed Critical Instytut Fizyki Polskiej Akademii Nauk
Priority to PL435887A priority Critical patent/PL245092B1/pl
Publication of PL435887A1 publication Critical patent/PL435887A1/pl
Publication of PL245092B1 publication Critical patent/PL245092B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Struktura ogniwa fotowoltaicznego ma krzemowe podłoże (1) typu n, które od spodu ma dolny kontakt elektryczny (2). Natomiast, od góry ma cienką warstwę zarodkującą (3) o grubości 1 – 3 nm, a na niej warstwę (4) o przeciwnym typie przewodnictwa w postaci warstwy tlenku miedzi o grubości 10 – 2000 nm i górny kontakt elektryczny (5). Według sposobu, najpierw na krzemowym podłożu typu n, z dolnym kontaktem elektrycznym osadza się cienką warstwę zarodkującą. Następnie przystępuje się do osadzania warstwy CuO umieszczając podłoże w roztworze o stężeniu miedzi od mM/dm3 do 100 mM/dm3, o wartości pH 5,5 — 9, podgrzewając do temperatury 30 - 100°C i utrzymując w tej temperaturze przez od 1 sek. do 30 min. Po zakończeniu procesu osadzania warstwy CuO, strukturę płucze się i suszy po czym wykonuje się w typowy sposób górny kontakt elektryczny.
PL435887A 2020-11-04 2020-11-04 Sposób wykonania struktury ogniwa fotowoltaicznego PL245092B1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL435887A PL245092B1 (pl) 2020-11-04 2020-11-04 Sposób wykonania struktury ogniwa fotowoltaicznego

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL435887A PL245092B1 (pl) 2020-11-04 2020-11-04 Sposób wykonania struktury ogniwa fotowoltaicznego

Publications (2)

Publication Number Publication Date
PL435887A1 true PL435887A1 (pl) 2022-05-09
PL245092B1 PL245092B1 (pl) 2024-05-13

Family

ID=81534673

Family Applications (1)

Application Number Title Priority Date Filing Date
PL435887A PL245092B1 (pl) 2020-11-04 2020-11-04 Sposób wykonania struktury ogniwa fotowoltaicznego

Country Status (1)

Country Link
PL (1) PL245092B1 (pl)

Also Published As

Publication number Publication date
PL245092B1 (pl) 2024-05-13

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