PL4386823T3 - Sposób pasywacji rozszczepionej struktury półprzewodnikowej - Google Patents
Sposób pasywacji rozszczepionej struktury półprzewodnikowejInfo
- Publication number
- PL4386823T3 PL4386823T3 PL22212687.2T PL22212687T PL4386823T3 PL 4386823 T3 PL4386823 T3 PL 4386823T3 PL 22212687 T PL22212687 T PL 22212687T PL 4386823 T3 PL4386823 T3 PL 4386823T3
- Authority
- PL
- Poland
- Prior art keywords
- passivating
- semiconductor structure
- cleaved semiconductor
- cleaved
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
- H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6504—In-situ cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3302—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP22212687.2A EP4386823B1 (en) | 2022-12-12 | 2022-12-12 | Method of passivating cleaved semiconductor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL4386823T3 true PL4386823T3 (pl) | 2025-04-28 |
Family
ID=84488681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL22212687.2T PL4386823T3 (pl) | 2022-12-12 | 2022-12-12 | Sposób pasywacji rozszczepionej struktury półprzewodnikowej |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240194477A1 (pl) |
| EP (1) | EP4386823B1 (pl) |
| JP (1) | JP2024084128A (pl) |
| CN (1) | CN118198853A (pl) |
| PL (1) | PL4386823T3 (pl) |
| TW (1) | TW202431386A (pl) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121307620B (zh) * | 2025-12-12 | 2026-03-17 | 江苏永鼎股份有限公司 | 一种dfb激光器中有源区的防氧化处理方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6069021A (en) * | 1997-05-14 | 2000-05-30 | Showa Denko K.K. | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer |
| JP4033626B2 (ja) * | 2000-10-06 | 2008-01-16 | 日本オプネクスト株式会社 | 半導体レーザ装置の製造方法 |
| WO2003021642A2 (en) * | 2001-08-31 | 2003-03-13 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| JP4178022B2 (ja) * | 2002-12-10 | 2008-11-12 | シャープ株式会社 | 半導体レーザ素子およびその製造方法、並びに、その製造方法に用いる治具 |
| US7687291B2 (en) * | 2005-03-25 | 2010-03-30 | Trumpf Photonics Inc. | Laser facet passivation |
| JP2007109737A (ja) * | 2005-10-11 | 2007-04-26 | Toshiba Corp | 窒化物半導体レーザ装置及びその製造方法 |
| EP3399606B1 (en) * | 2015-12-28 | 2023-07-26 | Furukawa Electric Co., Ltd. | Method for manufacturing semiconductor laser element |
| US10410943B2 (en) * | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
| CN110249417B (zh) * | 2017-02-10 | 2023-10-24 | 应用材料公司 | 用于深沟槽内的低温选择性外延的方法及设备 |
| DE102017129603B4 (de) * | 2017-09-27 | 2021-07-01 | VON ARDENNE Asset GmbH & Co. KG | Vakuumkammeranordnung und Verfahren zum Prozessieren eines Substrats |
| US10418781B1 (en) * | 2018-07-06 | 2019-09-17 | Ii-Vi Delaware, Inc. | Quantum well passivation structure for laser facets |
-
2022
- 2022-12-12 PL PL22212687.2T patent/PL4386823T3/pl unknown
- 2022-12-12 EP EP22212687.2A patent/EP4386823B1/en active Active
-
2023
- 2023-11-24 CN CN202311588740.7A patent/CN118198853A/zh active Pending
- 2023-11-27 JP JP2023199564A patent/JP2024084128A/ja active Pending
- 2023-11-28 US US18/520,980 patent/US20240194477A1/en active Pending
- 2023-12-11 TW TW112148175A patent/TW202431386A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN118198853A (zh) | 2024-06-14 |
| EP4386823C0 (en) | 2025-02-12 |
| EP4386823B1 (en) | 2025-02-12 |
| TW202431386A (zh) | 2024-08-01 |
| EP4386823A1 (en) | 2024-06-19 |
| US20240194477A1 (en) | 2024-06-13 |
| JP2024084128A (ja) | 2024-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| PL4386823T3 (pl) | Sposób pasywacji rozszczepionej struktury półprzewodnikowej | |
| HUE065016T2 (hu) | Eljárás SiC-ostya elõállítására | |
| NL2027546A (en) | Method of producing an organoid | |
| EP4322203A4 (en) | METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE | |
| SG10202101446XA (en) | Polishing composition, polishing method, and method of producing semiconductor substrate | |
| EP4195253A4 (en) | Semiconductor structure forming method and semiconductor structure | |
| EP4442868A4 (en) | Nitride Semiconductor Substrate and its Production Process | |
| GB202219567D0 (en) | Method of plasma etching | |
| TWI924083B (zh) | 半導體元件的製造方法 | |
| GB202212686D0 (en) | Method of providing a wafer | |
| GB202404375D0 (en) | Method of etching | |
| GB202303019D0 (en) | Method of lyophilisation | |
| GB202005730D0 (en) | Semiconductor structure and method of manufacture | |
| EP4191672A4 (en) | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE | |
| KR102722103B9 (ko) | 나노마스크를 이용한 투명 전도성 네트워크 제조방법 | |
| EP4195274A4 (en) | METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE | |
| KR102654253B9 (ko) | 질화탄탈륨 기반 광전극 제조방법 및 이에 의하여 제조된 광전극 | |
| GB2636304B (en) | Semiconductor structure for photonic integrated circuit and method of manufacture | |
| GB2602963B (en) | Semiconductor structure for photonic integrated circuit and method of manufacture | |
| GB202406994D0 (en) | Block splitting device vand method of manufacturing thereof | |
| TWI924074B (zh) | 半導體晶圓的製造方法 | |
| GB202504389D0 (en) | Method of bonding | |
| GB202308344D0 (en) | Method of manufacturing component | |
| GB202414925D0 (en) | Method of hydrogen manufacture | |
| GB202419108D0 (en) | Method of plasma dicing |