PL4386823T3 - Sposób pasywacji rozszczepionej struktury półprzewodnikowej - Google Patents

Sposób pasywacji rozszczepionej struktury półprzewodnikowej

Info

Publication number
PL4386823T3
PL4386823T3 PL22212687.2T PL22212687T PL4386823T3 PL 4386823 T3 PL4386823 T3 PL 4386823T3 PL 22212687 T PL22212687 T PL 22212687T PL 4386823 T3 PL4386823 T3 PL 4386823T3
Authority
PL
Poland
Prior art keywords
passivating
semiconductor structure
cleaved semiconductor
cleaved
semiconductor
Prior art date
Application number
PL22212687.2T
Other languages
English (en)
Inventor
Jaakko MÄKELÄ
Jouko LÅNG
Vicente Calvo Alonso
Original Assignee
Comptek Solutions Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comptek Solutions Oy filed Critical Comptek Solutions Oy
Publication of PL4386823T3 publication Critical patent/PL4386823T3/pl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282Passivation layers or treatments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282Passivation layers or treatments
    • H01S5/0283Optically inactive coating on the facet, e.g. half-wave coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504In-situ cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302Mechanical parts of transfer devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306Horizontal transfer of a single workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
  • Dicing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PL22212687.2T 2022-12-12 2022-12-12 Sposób pasywacji rozszczepionej struktury półprzewodnikowej PL4386823T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP22212687.2A EP4386823B1 (en) 2022-12-12 2022-12-12 Method of passivating cleaved semiconductor structure

Publications (1)

Publication Number Publication Date
PL4386823T3 true PL4386823T3 (pl) 2025-04-28

Family

ID=84488681

Family Applications (1)

Application Number Title Priority Date Filing Date
PL22212687.2T PL4386823T3 (pl) 2022-12-12 2022-12-12 Sposób pasywacji rozszczepionej struktury półprzewodnikowej

Country Status (6)

Country Link
US (1) US20240194477A1 (pl)
EP (1) EP4386823B1 (pl)
JP (1) JP2024084128A (pl)
CN (1) CN118198853A (pl)
PL (1) PL4386823T3 (pl)
TW (1) TW202431386A (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121307620B (zh) * 2025-12-12 2026-03-17 江苏永鼎股份有限公司 一种dfb激光器中有源区的防氧化处理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
JP4033626B2 (ja) * 2000-10-06 2008-01-16 日本オプネクスト株式会社 半導体レーザ装置の製造方法
WO2003021642A2 (en) * 2001-08-31 2003-03-13 Applied Materials, Inc. Method and apparatus for processing a wafer
JP4178022B2 (ja) * 2002-12-10 2008-11-12 シャープ株式会社 半導体レーザ素子およびその製造方法、並びに、その製造方法に用いる治具
US7687291B2 (en) * 2005-03-25 2010-03-30 Trumpf Photonics Inc. Laser facet passivation
JP2007109737A (ja) * 2005-10-11 2007-04-26 Toshiba Corp 窒化物半導体レーザ装置及びその製造方法
EP3399606B1 (en) * 2015-12-28 2023-07-26 Furukawa Electric Co., Ltd. Method for manufacturing semiconductor laser element
US10410943B2 (en) * 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
CN110249417B (zh) * 2017-02-10 2023-10-24 应用材料公司 用于深沟槽内的低温选择性外延的方法及设备
DE102017129603B4 (de) * 2017-09-27 2021-07-01 VON ARDENNE Asset GmbH & Co. KG Vakuumkammeranordnung und Verfahren zum Prozessieren eines Substrats
US10418781B1 (en) * 2018-07-06 2019-09-17 Ii-Vi Delaware, Inc. Quantum well passivation structure for laser facets

Also Published As

Publication number Publication date
CN118198853A (zh) 2024-06-14
EP4386823C0 (en) 2025-02-12
EP4386823B1 (en) 2025-02-12
TW202431386A (zh) 2024-08-01
EP4386823A1 (en) 2024-06-19
US20240194477A1 (en) 2024-06-13
JP2024084128A (ja) 2024-06-24

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