PL451924A1 - Wzmacniacz ładunkowy z równoważeniem biegun-zero - Google Patents
Wzmacniacz ładunkowy z równoważeniem biegun-zeroInfo
- Publication number
- PL451924A1 PL451924A1 PL451924A PL45192423A PL451924A1 PL 451924 A1 PL451924 A1 PL 451924A1 PL 451924 A PL451924 A PL 451924A PL 45192423 A PL45192423 A PL 45192423A PL 451924 A1 PL451924 A1 PL 451924A1
- Authority
- PL
- Poland
- Prior art keywords
- input
- output
- charge amplifier
- gain stage
- pole
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/301—CMOS common drain output SEPP amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/70—Charge amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/02—Manually-operated control
- H03G3/04—Manually-operated control in untuned amplifiers
- H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/153—Feedback used to stabilise the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
- H03F2203/30036—A feedback circuit to stabilise the SEPP being used
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
- H03F2203/30084—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the pull circuit of the SEPP amplifier being a cascode circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
- H03F2203/30117—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push circuit of the SEPP amplifier being a cascode circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45514—Indexing scheme relating to differential amplifiers the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Przedmiotem zgłoszenia przedstawionym na rysunku jest wzmacniacz ładunkowy skonfigurowany do odbierania sygnału ładunku wejściowego z czujnika promieniowania zawiera stopień wzmocnienia o wysokim współczynniku wzmocnienia napięcia w pętli otwartej zawierający co najmniej jeden spośród wzmacniacza operacyjnego i/lub transkonduktancyjnego wzmacniacza operacyjnego, sieć pojemnościową połączoną elektrycznie między wejściem i wyjściem stopnia wzmocnienia o wysokim współczynniku wzmocnienia napięcia w pętli otwartej i siec obwodu aktywnego sprzężenia zwrotnego połączoną elektrycznie między wejściem i wyjściem stopnia wzmocnienia o wysokim współczynniku wzmocnienia napięcia w pętli otwartej. Sieć pojemnościowa zapewnia całkowanie sygnału ładunku wejściowego i konwersję sygnału ładunku wejściowego na napięcie dostępne na wyjściu wzmacniacza ładunkowego.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263379887P | 2022-10-17 | 2022-10-17 | |
| PCT/US2023/035170 WO2024086081A1 (en) | 2022-10-17 | 2023-10-16 | Charge-sensitive amplifier with pole-zero cancellation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL451924A1 true PL451924A1 (pl) | 2025-12-08 |
Family
ID=90738111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL451924A PL451924A1 (pl) | 2022-10-17 | 2023-10-16 | Wzmacniacz ładunkowy z równoważeniem biegun-zero |
Country Status (2)
| Country | Link |
|---|---|
| PL (1) | PL451924A1 (pl) |
| WO (1) | WO2024086081A1 (pl) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118466660B (zh) * | 2024-05-28 | 2026-03-20 | 玄武石半导体(武汉)有限公司 | 一种基于带隙基准核心的预稳压电路 |
| EP4729991A1 (en) | 2024-10-17 | 2026-04-22 | Siemens Healthineers AG | X-ray detection system |
| CN120523278B (zh) * | 2025-07-24 | 2025-09-30 | 成都瓴科微电子有限责任公司 | 一种动态零点补偿电路 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0813338A2 (en) * | 1996-06-13 | 1997-12-17 | Rockwell International Corporation | Low noise amplifier for passive pixel cmos imager |
| US5793254A (en) * | 1996-09-24 | 1998-08-11 | Brookhaven Science Associates Llc | Monolithic amplifier with stable, high resistance feedback element and method for fabricating the same |
| US6998913B2 (en) * | 2004-06-14 | 2006-02-14 | Brookhaven Science Associates, Llc | Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers |
| US20100019842A1 (en) * | 2008-07-24 | 2010-01-28 | Texas Instruments Incorporated | Low-noise, wide offset range, programmable input offset amplifier front end and method |
| US20220345100A1 (en) * | 2019-06-25 | 2022-10-27 | Oxford Instruments Technologies Oy | A preamplifier circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51113555A (en) * | 1975-03-31 | 1976-10-06 | Japan Atom Energy Res Inst | Self-feedback-type low noise electric charge amplifier |
| US6054705A (en) * | 1995-03-20 | 2000-04-25 | Carroll; Lewis | Charge-integrating preamplifier for capacitive transducer |
| US7403065B1 (en) * | 2006-08-22 | 2008-07-22 | Sandia Corporation | Differential transimpedance amplifier circuit for correlated differential amplification |
| US10180501B2 (en) * | 2014-11-27 | 2019-01-15 | Sharp Kabushiki Kaisha | Radiation detector |
| DE112022000995T5 (de) * | 2021-04-08 | 2024-01-11 | Ams International Ag | Elektronische Front-End-Schaltung für eine Sensoranwendung für elektromagnetische Strahlung |
-
2023
- 2023-10-16 WO PCT/US2023/035170 patent/WO2024086081A1/en not_active Ceased
- 2023-10-16 PL PL451924A patent/PL451924A1/pl unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0813338A2 (en) * | 1996-06-13 | 1997-12-17 | Rockwell International Corporation | Low noise amplifier for passive pixel cmos imager |
| US5793254A (en) * | 1996-09-24 | 1998-08-11 | Brookhaven Science Associates Llc | Monolithic amplifier with stable, high resistance feedback element and method for fabricating the same |
| US6998913B2 (en) * | 2004-06-14 | 2006-02-14 | Brookhaven Science Associates, Llc | Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers |
| US20100019842A1 (en) * | 2008-07-24 | 2010-01-28 | Texas Instruments Incorporated | Low-noise, wide offset range, programmable input offset amplifier front end and method |
| US20220345100A1 (en) * | 2019-06-25 | 2022-10-27 | Oxford Instruments Technologies Oy | A preamplifier circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024086081A9 (en) | 2025-02-20 |
| WO2024086081A1 (en) | 2024-04-25 |
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