PL451924A1 - Wzmacniacz ładunkowy z równoważeniem biegun-zero - Google Patents

Wzmacniacz ładunkowy z równoważeniem biegun-zero

Info

Publication number
PL451924A1
PL451924A1 PL451924A PL45192423A PL451924A1 PL 451924 A1 PL451924 A1 PL 451924A1 PL 451924 A PL451924 A PL 451924A PL 45192423 A PL45192423 A PL 45192423A PL 451924 A1 PL451924 A1 PL 451924A1
Authority
PL
Poland
Prior art keywords
input
output
charge amplifier
gain stage
pole
Prior art date
Application number
PL451924A
Other languages
English (en)
Inventor
Grzegorz W. Deptuch
Piotr OTFINOWSKI
Original Assignee
Brookhaven Science Associates, Llc
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brookhaven Science Associates, Llc, Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie filed Critical Brookhaven Science Associates, Llc
Publication of PL451924A1 publication Critical patent/PL451924A1/pl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/301—CMOS common drain output SEPP amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/70—Charge amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/153—Feedback used to stabilise the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30036—A feedback circuit to stabilise the SEPP being used
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30084—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the pull circuit of the SEPP amplifier being a cascode circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30117—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push circuit of the SEPP amplifier being a cascode circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45514—Indexing scheme relating to differential amplifiers the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Przedmiotem zgłoszenia przedstawionym na rysunku jest wzmacniacz ładunkowy skonfigurowany do odbierania sygnału ładunku wejściowego z czujnika promieniowania zawiera stopień wzmocnienia o wysokim współczynniku wzmocnienia napięcia w pętli otwartej zawierający co najmniej jeden spośród wzmacniacza operacyjnego i/lub transkonduktancyjnego wzmacniacza operacyjnego, sieć pojemnościową połączoną elektrycznie między wejściem i wyjściem stopnia wzmocnienia o wysokim współczynniku wzmocnienia napięcia w pętli otwartej i siec obwodu aktywnego sprzężenia zwrotnego połączoną elektrycznie między wejściem i wyjściem stopnia wzmocnienia o wysokim współczynniku wzmocnienia napięcia w pętli otwartej. Sieć pojemnościowa zapewnia całkowanie sygnału ładunku wejściowego i konwersję sygnału ładunku wejściowego na napięcie dostępne na wyjściu wzmacniacza ładunkowego.
PL451924A 2022-10-17 2023-10-16 Wzmacniacz ładunkowy z równoważeniem biegun-zero PL451924A1 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263379887P 2022-10-17 2022-10-17
PCT/US2023/035170 WO2024086081A1 (en) 2022-10-17 2023-10-16 Charge-sensitive amplifier with pole-zero cancellation

Publications (1)

Publication Number Publication Date
PL451924A1 true PL451924A1 (pl) 2025-12-08

Family

ID=90738111

Family Applications (1)

Application Number Title Priority Date Filing Date
PL451924A PL451924A1 (pl) 2022-10-17 2023-10-16 Wzmacniacz ładunkowy z równoważeniem biegun-zero

Country Status (2)

Country Link
PL (1) PL451924A1 (pl)
WO (1) WO2024086081A1 (pl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118466660B (zh) * 2024-05-28 2026-03-20 玄武石半导体(武汉)有限公司 一种基于带隙基准核心的预稳压电路
EP4729991A1 (en) 2024-10-17 2026-04-22 Siemens Healthineers AG X-ray detection system
CN120523278B (zh) * 2025-07-24 2025-09-30 成都瓴科微电子有限责任公司 一种动态零点补偿电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0813338A2 (en) * 1996-06-13 1997-12-17 Rockwell International Corporation Low noise amplifier for passive pixel cmos imager
US5793254A (en) * 1996-09-24 1998-08-11 Brookhaven Science Associates Llc Monolithic amplifier with stable, high resistance feedback element and method for fabricating the same
US6998913B2 (en) * 2004-06-14 2006-02-14 Brookhaven Science Associates, Llc Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers
US20100019842A1 (en) * 2008-07-24 2010-01-28 Texas Instruments Incorporated Low-noise, wide offset range, programmable input offset amplifier front end and method
US20220345100A1 (en) * 2019-06-25 2022-10-27 Oxford Instruments Technologies Oy A preamplifier circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113555A (en) * 1975-03-31 1976-10-06 Japan Atom Energy Res Inst Self-feedback-type low noise electric charge amplifier
US6054705A (en) * 1995-03-20 2000-04-25 Carroll; Lewis Charge-integrating preamplifier for capacitive transducer
US7403065B1 (en) * 2006-08-22 2008-07-22 Sandia Corporation Differential transimpedance amplifier circuit for correlated differential amplification
JP6483150B2 (ja) * 2014-11-27 2019-03-13 シャープ株式会社 放射線検出器
DE112022000995T5 (de) * 2021-04-08 2024-01-11 Ams International Ag Elektronische Front-End-Schaltung für eine Sensoranwendung für elektromagnetische Strahlung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0813338A2 (en) * 1996-06-13 1997-12-17 Rockwell International Corporation Low noise amplifier for passive pixel cmos imager
US5793254A (en) * 1996-09-24 1998-08-11 Brookhaven Science Associates Llc Monolithic amplifier with stable, high resistance feedback element and method for fabricating the same
US6998913B2 (en) * 2004-06-14 2006-02-14 Brookhaven Science Associates, Llc Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers
US20100019842A1 (en) * 2008-07-24 2010-01-28 Texas Instruments Incorporated Low-noise, wide offset range, programmable input offset amplifier front end and method
US20220345100A1 (en) * 2019-06-25 2022-10-27 Oxford Instruments Technologies Oy A preamplifier circuit

Also Published As

Publication number Publication date
WO2024086081A9 (en) 2025-02-20
WO2024086081A1 (en) 2024-04-25

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