PT102297A - Circuitos integrados inteligentes de potencia configuraveis e dispositivos semicondutores - Google Patents

Circuitos integrados inteligentes de potencia configuraveis e dispositivos semicondutores

Info

Publication number
PT102297A
PT102297A PT102297A PT10229799A PT102297A PT 102297 A PT102297 A PT 102297A PT 102297 A PT102297 A PT 102297A PT 10229799 A PT10229799 A PT 10229799A PT 102297 A PT102297 A PT 102297A
Authority
PT
Portugal
Prior art keywords
integrated circuits
semiconductor devices
intelligent power
power integrated
circuits configurable
Prior art date
Application number
PT102297A
Other languages
English (en)
Inventor
Maria Ines Castro Simas
A P Casimiro
P Santos
S Finco
F Behrens
C Mammana
Original Assignee
Inst Superior Tecnico
Fundacao Ct Tecnologico Para A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Superior Tecnico, Fundacao Ct Tecnologico Para A filed Critical Inst Superior Tecnico
Priority to PT102297A priority Critical patent/PT102297A/pt
Priority to EP00967408A priority patent/EP1101284A1/en
Priority to KR1020007014940A priority patent/KR20010078751A/ko
Priority to JP2000616123A priority patent/JP2002543630A/ja
Priority to PCT/PT2000/000003 priority patent/WO2000067377A2/en
Priority to AU72114/00A priority patent/AU7211400A/en
Priority to BR0006053-4A priority patent/BR0006053A/pt
Priority to CA002336107A priority patent/CA2336107A1/en
Priority to CN00801020A priority patent/CN1310883A/zh
Publication of PT102297A publication Critical patent/PT102297A/pt
Priority to US09/915,571 priority patent/US20020158299A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
PT102297A 1999-04-28 1999-04-28 Circuitos integrados inteligentes de potencia configuraveis e dispositivos semicondutores PT102297A (pt)

Priority Applications (10)

Application Number Priority Date Filing Date Title
PT102297A PT102297A (pt) 1999-04-28 1999-04-28 Circuitos integrados inteligentes de potencia configuraveis e dispositivos semicondutores
EP00967408A EP1101284A1 (en) 1999-04-28 2000-04-28 Mask configurable smart power circuits - applications and gs-nmos devices
KR1020007014940A KR20010078751A (ko) 1999-04-28 2000-04-28 마스크로 구성 가능한 스마트 파워 회로－그의애플리케이션과 게이트 시프트된 ｎｍｏｓ 소자
JP2000616123A JP2002543630A (ja) 1999-04-28 2000-04-28 マスク構成の変更が可能なスマートパワー回路、その応用、および、ｇｓ−ｎｍｏｓデバイス
PCT/PT2000/000003 WO2000067377A2 (en) 1999-04-28 2000-04-28 Mask configurable smart power circuits - applications and gs-nmos devices
AU72114/00A AU7211400A (en) 1999-04-28 2000-04-28 Mask configurable smart power circuits - applications and GS-NMOS devices
BR0006053-4A BR0006053A (pt) 1999-04-28 2000-04-28 Circuitos de força inteligente configuráveis por máscara-aplicações e dispositivos gs-nmos
CA002336107A CA2336107A1 (en) 1999-04-28 2000-04-28 Mask configurable smart power circuits - applications and gs-nmos devices
CN00801020A CN1310883A (zh) 1999-04-28 2000-04-28 掩模可配置的智能功率电路－应用和g s－nmos器件
US09/915,571 US20020158299A1 (en) 1999-04-28 2001-07-27 Mask configurable smart power circuits - applications and GF-NMOS devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PT102297A PT102297A (pt) 1999-04-28 1999-04-28 Circuitos integrados inteligentes de potencia configuraveis e dispositivos semicondutores

Publications (1)

Publication Number Publication Date
PT102297A true PT102297A (pt) 2000-10-31

Family

ID=20085846

Family Applications (1)

Application Number Title Priority Date Filing Date
PT102297A PT102297A (pt) 1999-04-28 1999-04-28 Circuitos integrados inteligentes de potencia configuraveis e dispositivos semicondutores

Country Status (10)

Country Link
US (1) US20020158299A1 (pt)
EP (1) EP1101284A1 (pt)
JP (1) JP2002543630A (pt)
KR (1) KR20010078751A (pt)
CN (1) CN1310883A (pt)
AU (1) AU7211400A (pt)
BR (1) BR0006053A (pt)
CA (1) CA2336107A1 (pt)
PT (1) PT102297A (pt)
WO (1) WO2000067377A2 (pt)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3964334B2 (ja) * 2003-02-06 2007-08-22 ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー 超音波診断装置
CN100514340C (zh) * 2003-06-23 2009-07-15 阿尔特拉公司 给掩模可编程逻辑器件编程的方法及如此编程的器件
CN1857166B (zh) * 2005-04-30 2010-09-08 Ge医疗系统环球技术有限公司 超声波诊断装置
US7402846B2 (en) * 2005-10-20 2008-07-22 Atmel Corporation Electrostatic discharge (ESD) protection structure and a circuit using the same
KR100707594B1 (ko) * 2005-12-28 2007-04-13 동부일렉트로닉스 주식회사 반도체 소자의 싸이리스터형 격리 구조
US7528651B2 (en) * 2006-05-08 2009-05-05 International Rectifier Corporation Noise free implementation of PWM modulator combined with gate driver stage in a single die
US8108803B2 (en) * 2009-10-22 2012-01-31 International Business Machines Corporation Geometry based electrical hotspot detection in integrated circuit layouts
US9209098B2 (en) 2011-05-19 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. HVMOS reliability evaluation using bulk resistances as indices
TW201306416A (zh) * 2011-07-28 2013-02-01 Raydium Semiconductor Corp 具有靜電放電保護效應的電子裝置
US8502274B1 (en) * 2012-04-06 2013-08-06 Infineon Technologies Ag Integrated circuit including power transistor cells and a connecting line
CN103474462B (zh) * 2012-06-07 2016-05-18 立锜科技股份有限公司 横向双扩散金属氧化物半导体元件及其制造方法
US20140001551A1 (en) * 2012-06-29 2014-01-02 Richtek Technology Corporation, R.O.C. Lateral Double Diffused Metal Oxide Semiconductor Device and Manufacturing Method Thereof
US9189582B2 (en) * 2013-08-23 2015-11-17 Mentor Graphics Corporation Programmable pattern aware voltage analysis
JP2015056472A (ja) 2013-09-11 2015-03-23 株式会社東芝 半導体装置
CN109145511B (zh) * 2018-09-28 2022-11-15 珠海一微半导体股份有限公司 一种mos管的栅极的交互式打孔方法
CN110959676B (zh) * 2018-09-30 2022-11-25 内蒙古伊利实业集团股份有限公司 一种含乳双歧杆菌的发酵乳制品及其应用
US10892236B2 (en) * 2019-04-30 2021-01-12 Qualcomm Incorporated Integrated circuit having a periphery of input/output cells
CN114531018B (zh) * 2022-03-14 2025-12-16 上海美仁半导体有限公司 智能功率模块及控制设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610503A (en) * 1995-05-10 1997-03-11 Celestica, Inc. Low voltage DC-to-DC power converter integrated circuit and related methods
US6459331B1 (en) * 1997-09-02 2002-10-01 Kabushiki Kaisha Toshiba Noise suppression circuit, ASIC, navigation apparatus communication circuit, and communication apparatus having the same

Also Published As

Publication number Publication date
CA2336107A1 (en) 2000-11-09
US20020158299A1 (en) 2002-10-31
WO2000067377A2 (en) 2000-11-09
CN1310883A (zh) 2001-08-29
KR20010078751A (ko) 2001-08-21
EP1101284A1 (en) 2001-05-23
BR0006053A (pt) 2001-06-19
AU7211400A (en) 2000-11-17
JP2002543630A (ja) 2002-12-17

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BB1A Laying open of patent application

Effective date: 19990630

FC3A Refusal

Effective date: 20030307