SE0200965L - Thin Film Diode Device - Google Patents

Thin Film Diode Device

Info

Publication number
SE0200965L
SE0200965L SE0200965A SE0200965A SE0200965L SE 0200965 L SE0200965 L SE 0200965L SE 0200965 A SE0200965 A SE 0200965A SE 0200965 A SE0200965 A SE 0200965A SE 0200965 L SE0200965 L SE 0200965L
Authority
SE
Sweden
Prior art keywords
thin film
diode device
film diode
transparent substrate
optical filter
Prior art date
Application number
SE0200965A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE0200965D0 (en
Inventor
Jan Wipenmyr
Henrik Roedjegaard
Original Assignee
Imego Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imego Ab filed Critical Imego Ab
Priority to SE0200965A priority Critical patent/SE0200965L/en
Publication of SE0200965D0 publication Critical patent/SE0200965D0/en
Priority to PCT/SE2003/000451 priority patent/WO2003081682A1/en
Priority to AU2003214744A priority patent/AU2003214744A1/en
Publication of SE0200965L publication Critical patent/SE0200965L/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Optical Filters (AREA)
  • Physical Vapour Deposition (AREA)
  • Diaphragms For Cameras (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention relates to a thin film compound arrangement (13) provided with an integrated optical filter (11). The arrangement comprises: an illumination transparent substrate (10), at least one coating constituting said integrated optical filter (11); applied directly on one surface of said illumination transparent substrate, and an optically sensitive layer of said thin film compound (12), applied directly to at least one of said illumination transparent substrate (10) or said at least one coating constituting said integrated optical filter (11).
SE0200965A 2002-03-26 2002-03-26 Thin Film Diode Device SE0200965L (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE0200965A SE0200965L (en) 2002-03-26 2002-03-26 Thin Film Diode Device
PCT/SE2003/000451 WO2003081682A1 (en) 2002-03-26 2003-03-18 Thin film compound arrangement
AU2003214744A AU2003214744A1 (en) 2002-03-26 2003-03-18 Thin film compound arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0200965A SE0200965L (en) 2002-03-26 2002-03-26 Thin Film Diode Device

Publications (2)

Publication Number Publication Date
SE0200965D0 SE0200965D0 (en) 2002-03-26
SE0200965L true SE0200965L (en) 2003-09-27

Family

ID=20287435

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0200965A SE0200965L (en) 2002-03-26 2002-03-26 Thin Film Diode Device

Country Status (3)

Country Link
AU (1) AU2003214744A1 (en)
SE (1) SE0200965L (en)
WO (1) WO2003081682A1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996461A (en) * 1975-03-31 1976-12-07 Texas Instruments Incorporated Silicon photosensor with optical thin film filter

Also Published As

Publication number Publication date
AU2003214744A1 (en) 2003-10-08
WO2003081682A1 (en) 2003-10-02
SE0200965D0 (en) 2002-03-26

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Legal Events

Date Code Title Description
NAV Patent application has lapsed