SE0802294L - Förfarande för tillverkning av en kiselkarbid-halvledarkrets - Google Patents

Förfarande för tillverkning av en kiselkarbid-halvledarkrets

Info

Publication number
SE0802294L
SE0802294L SE0802294A SE0802294A SE0802294L SE 0802294 L SE0802294 L SE 0802294L SE 0802294 A SE0802294 A SE 0802294A SE 0802294 A SE0802294 A SE 0802294A SE 0802294 L SE0802294 L SE 0802294L
Authority
SE
Sweden
Prior art keywords
manufacturing
silicon carbide
carbide semiconductor
semiconductor circuit
semiconductor substrate
Prior art date
Application number
SE0802294A
Other languages
English (en)
Other versions
SE533497C2 (sv
Inventor
Masatake Nagaya
Yuuichi Takeuchi
Katsuhiro Nagata
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of SE0802294L publication Critical patent/SE0802294L/sv
Publication of SE533497C2 publication Critical patent/SE533497C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H01L21/302—
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
SE0802294A 2007-11-13 2008-10-28 Förfarande för tillverkning av en kiselkarbid-halvledarkrets SE533497C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007294163A JP4732423B2 (ja) 2007-11-13 2007-11-13 炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
SE0802294L true SE0802294L (sv) 2009-05-14
SE533497C2 SE533497C2 (sv) 2010-10-12

Family

ID=40624093

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0802294A SE533497C2 (sv) 2007-11-13 2008-10-28 Förfarande för tillverkning av en kiselkarbid-halvledarkrets

Country Status (3)

Country Link
US (1) US7763543B2 (sv)
JP (1) JP4732423B2 (sv)
SE (1) SE533497C2 (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113561053A (zh) * 2021-08-03 2021-10-29 青岛佳恩半导体有限公司 一种超薄碳化硅单晶衬底的制备设备及方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008125543A2 (en) * 2007-04-17 2008-10-23 Interuniversitair Microelektronica Centrum (Imec) Method for reducing the thickness of substrates
JP5335576B2 (ja) * 2009-06-26 2013-11-06 株式会社ディスコ 半導体ウエーハの加工方法
JP5350127B2 (ja) * 2009-08-13 2013-11-27 株式会社ディスコ 被加工物の研削方法
DE102009051007B4 (de) * 2009-10-28 2011-12-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP5666897B2 (ja) * 2010-12-28 2015-02-12 日本電産サンキョー株式会社 多チャンネル磁気センサ装置の製造方法および多チャンネル磁気センサ装置
JP5534038B2 (ja) * 2011-01-06 2014-06-25 日立金属株式会社 炭化珪素単結晶基板への識別マークの形成方法、及び炭化珪素単結晶基板
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
JP6106419B2 (ja) * 2012-12-12 2017-03-29 昭和電工株式会社 ＳｉＣ基板の製造方法
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6648743B2 (ja) 2016-10-05 2020-02-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP7614707B2 (ja) * 2019-11-08 2025-01-16 株式会社ディスコ ＳｉＣ基板の再生方法
KR102759345B1 (ko) * 2020-09-08 2025-01-22 어플라이드 머티어리얼스, 인코포레이티드 Cmp 프로세싱을 위한 방법들 및 기판 핸들링 시스템들
US12176202B2 (en) * 2020-10-08 2024-12-24 Okmetic Oy Manufacture method of a high-resistivity silicon handle wafer for a hybrid substrate structure
JP7852695B1 (ja) * 2024-12-17 2026-04-28 株式会社ゼネラル ベーンの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144638A (ja) 1996-11-15 1998-05-29 Sony Corp 半導体装置の製造方法
US5816900A (en) * 1997-07-17 1998-10-06 Lsi Logic Corporation Apparatus for polishing a substrate at radially varying polish rates
US5997392A (en) * 1997-07-22 1999-12-07 International Business Machines Corporation Slurry injection technique for chemical-mechanical polishing
US7129110B1 (en) 1999-08-23 2006-10-31 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
JP4028163B2 (ja) * 1999-11-16 2007-12-26 株式会社デンソー メカノケミカル研磨方法及びメカノケミカル研磨装置
JP2002151786A (ja) * 2000-11-10 2002-05-24 Sharp Corp 半導体レーザ素子
JP4719991B2 (ja) * 2001-03-12 2011-07-06 株式会社デンソー 炭化珪素半導体装置の製造方法
US7485962B2 (en) 2002-12-10 2009-02-03 Fujitsu Limited Semiconductor device, wiring substrate forming method, and substrate processing apparatus
JP4489016B2 (ja) * 2002-12-10 2010-06-23 富士通株式会社 配線基板の形成方法、配線薄膜の形成方法及び基板処理装置
JP2006032655A (ja) * 2004-07-16 2006-02-02 Kyoto Univ 炭化珪素基板の製造方法
WO2006031641A2 (en) * 2004-09-10 2006-03-23 Cree, Inc. Method of manufacturing carrier wafer and resulting carrier wafer structures
JP2007197302A (ja) * 2005-12-28 2007-08-09 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法および製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113561053A (zh) * 2021-08-03 2021-10-29 青岛佳恩半导体有限公司 一种超薄碳化硅单晶衬底的制备设备及方法
CN113561053B (zh) * 2021-08-03 2024-05-31 青岛佳恩半导体有限公司 一种超薄碳化硅单晶衬底的制备设备及方法

Also Published As

Publication number Publication date
US20090124060A1 (en) 2009-05-14
US7763543B2 (en) 2010-07-27
SE533497C2 (sv) 2010-10-12
JP2009123806A (ja) 2009-06-04
JP4732423B2 (ja) 2011-07-27

Similar Documents

Publication Publication Date Title
EP1983575A3 (en) Method for manufacturing bonded substrate
WO2009153422A8 (fr) Traitement de surface par plasma d'azote dans un procédé de collage direct
EP2629326A3 (en) Substrate transport method and substrate transport apparatus
PH12012501962A1 (en) Sheet for protecting surface of semiconductor wafer, semiconductor device manufacturing method and semiconductor wafer protection method using sheet
TWD179095S (zh) 基板保持環
SG166717A1 (en) A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of sige deposited on the front side
TW200637041A (en) Nitride semiconductor light-emitting device and method for fabrication thereof
TW200735201A (en) CMP method providing reduced thickness variations
MY153077A (en) Method to selectively polish silicon carbide films
WO2010124213A3 (en) A method for processing a substrate having a non-planar substrate surface
TW200739775A (en) Semiconductor-wafer processing method using fluid-like layer
FR2926671B1 (fr) Procede de traitement de defauts lors de collage de plaques
ATE554149T1 (de) Klebefolie zum abschleifen der oberfläche eines halbleiterwafers und verfahren zum abschleifen der oberfläche eines halbleiterwafers unter verwendung der klebefolie
TW200733230A (en) Semiconductor processing
GB0317854D0 (en) Method of manufacturing diamond substrates
TW200705681A (en) Image sensor package, optical glass used thereby, and processing method thereof
MY189253A (en) Semiconductor wafer comprising a monocrystalline group-iiia nitride layer
WO2011090572A3 (en) A method to form lateral pad on edge of wafer
TW200731380A (en) Semiconductor wafer manufacturing method, semiconductor wafer double-sided grinding method, and semiconductor wafer double-sided grinding apparatus
TW200640283A (en) Method of manufacturing an organic electronic device
TW200746265A (en) Methods and apparatus for epitaxial film formation
SG155826A1 (en) Wafer processing method and wafer processing apparatus
ITMI20091294A1 (it) Modulo a semiconduttore e un procedimento per la produzione di un circuito elettronico
JP2012015344A5 (ja) 半導体装置の製造方法、基板処理方法及び基板処理装置
SG131917A1 (en) Method of grinding back surface of semiconductor wafer and semiconductor wafer grinding apparatus

Legal Events

Date Code Title Description
NUG Patent has lapsed