SE351747B - - Google Patents
Info
- Publication number
- SE351747B SE351747B SE06205/68A SE620568A SE351747B SE 351747 B SE351747 B SE 351747B SE 06205/68 A SE06205/68 A SE 06205/68A SE 620568 A SE620568 A SE 620568A SE 351747 B SE351747 B SE 351747B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/19—Diffusion sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/04—Dopants, special
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63750967A | 1967-05-10 | 1967-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE351747B true SE351747B (fr) | 1972-12-04 |
Family
ID=24556242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE06205/68A SE351747B (fr) | 1967-05-10 | 1968-05-08 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3514348A (fr) |
| BR (2) | BR6898065D0 (fr) |
| CH (1) | CH465065A (fr) |
| DE (1) | DE1771341A1 (fr) |
| FR (1) | FR1561859A (fr) |
| GB (1) | GB1151830A (fr) |
| NL (1) | NL6806595A (fr) |
| SE (1) | SE351747B (fr) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3718502A (en) * | 1969-10-15 | 1973-02-27 | J Gibbons | Enhancement of diffusion of atoms into a heated substrate by bombardment |
| DE2007752B2 (de) * | 1970-02-19 | 1978-07-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
| US3870576A (en) * | 1970-04-29 | 1975-03-11 | Ilya Leonidovich Isitovsky | Method of making a profiled p-n junction in a plate of semiconductive material |
| CA1008564A (en) * | 1974-04-18 | 1977-04-12 | Robert L. Luce | Method of mos circuit fabrication |
| US3931056A (en) * | 1974-08-26 | 1976-01-06 | The Carborundum Company | Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates |
| US4048350A (en) * | 1975-09-19 | 1977-09-13 | International Business Machines Corporation | Semiconductor device having reduced surface leakage and methods of manufacture |
| JPS5676538A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Formation of insulating film on semiconductor substrate |
| EP0031180A3 (fr) * | 1979-12-19 | 1983-07-20 | Philips Electronics Uk Limited | Procédé de croissance d'une couche d'un composé III-V dopé par épitaxie par faisceau moléculaire et dispositif semiconducteur comportant un substrat semiconducteur muni d'une couche épitaxiale d'un composé III-V dopé déposé par ce procédé |
| US4605450A (en) * | 1982-02-11 | 1986-08-12 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
| US4571366A (en) * | 1982-02-11 | 1986-02-18 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
| US4490192A (en) * | 1983-06-08 | 1984-12-25 | Allied Corporation | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
| JPS60153119A (ja) * | 1984-01-20 | 1985-08-12 | Fuji Electric Corp Res & Dev Ltd | 不純物拡散方法 |
| US5278097A (en) * | 1989-07-31 | 1994-01-11 | Texas Instruments Incorporated | Method of making doped silicon spheres |
| JPH08119787A (ja) * | 1994-10-14 | 1996-05-14 | Komatsu Electron Metals Co Ltd | 連続チャージ法におけるドーパント供給方法およびドーパント組成物 |
| KR20070010868A (ko) * | 2005-07-20 | 2007-01-24 | 삼성전자주식회사 | 박막트랜지스터 기판의 제조방법 |
| CN100398195C (zh) * | 2005-08-18 | 2008-07-02 | 清华大学 | 掺硼纳米氧化物的合成方法及用途 |
| JP5283824B2 (ja) * | 2006-01-18 | 2013-09-04 | 東京応化工業株式会社 | 膜形成組成物 |
| DE102007023103A1 (de) * | 2007-05-16 | 2008-11-20 | Evonik Degussa Gmbh | Siliciumdioxid-Dispersion und Verfahren zur Beschichtung von Substraten |
| CN113053736B (zh) * | 2021-03-11 | 2024-05-03 | 捷捷半导体有限公司 | 一种半导体器件制作方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1156384B (de) * | 1960-12-23 | 1963-10-31 | Wacker Chemie Gmbh | Verfahren zum Dotieren von hochreinen Stoffen |
| US3212929A (en) * | 1962-03-22 | 1965-10-19 | Ibm | Method of forming a glass film on an object |
| US3354005A (en) * | 1965-10-23 | 1967-11-21 | Western Electric Co | Methods of applying doping compositions to base materials |
-
1967
- 1967-05-10 US US637509A patent/US3514348A/en not_active Expired - Lifetime
-
1968
- 1968-04-02 BR BR198065/68A patent/BR6898065D0/pt unknown
- 1968-04-02 BR BR198066/68A patent/BR6898066D0/pt unknown
- 1968-04-24 GB GB19360/68A patent/GB1151830A/en not_active Expired
- 1968-05-08 CH CH705268A patent/CH465065A/fr unknown
- 1968-05-08 SE SE06205/68A patent/SE351747B/xx unknown
- 1968-05-09 FR FR1561859D patent/FR1561859A/fr not_active Expired
- 1968-05-09 NL NL6806595A patent/NL6806595A/xx not_active Application Discontinuation
- 1968-05-09 DE DE19681771341 patent/DE1771341A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1151830A (en) | 1969-05-14 |
| BR6898065D0 (pt) | 1973-01-11 |
| FR1561859A (fr) | 1969-03-28 |
| NL6806595A (fr) | 1968-11-11 |
| DE1771341A1 (de) | 1971-12-23 |
| CH465065A (fr) | 1968-11-15 |
| US3514348A (en) | 1970-05-26 |
| BR6898066D0 (pt) | 1973-02-15 |