SE355957B - - Google Patents

Info

Publication number
SE355957B
SE355957B SE03678/70A SE367870A SE355957B SE 355957 B SE355957 B SE 355957B SE 03678/70 A SE03678/70 A SE 03678/70A SE 367870 A SE367870 A SE 367870A SE 355957 B SE355957 B SE 355957B
Authority
SE
Sweden
Application number
SE03678/70A
Inventor
W Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE355957B publication Critical patent/SE355957B/xx

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SE03678/70A 1969-03-19 1970-03-18 SE355957B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691913881 DE1913881A1 (de) 1969-03-19 1969-03-19 Vorrichtung zum tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
SE355957B true SE355957B (de) 1973-05-14

Family

ID=5728595

Family Applications (1)

Application Number Title Priority Date Filing Date
SE03678/70A SE355957B (de) 1969-03-19 1970-03-18

Country Status (7)

Country Link
US (1) US3644151A (de)
CH (1) CH557199A (de)
DE (1) DE1913881A1 (de)
FR (1) FR2039037A5 (de)
GB (1) GB1256438A (de)
NL (1) NL6918529A (de)
SE (1) SE355957B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2220519C3 (de) * 1972-04-26 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben
JPS5382603A (en) * 1976-12-27 1978-07-21 Monsanto Co Zone refining apparatus for semiconductive material rod
US4220626A (en) * 1978-04-13 1980-09-02 Monsanto Company RF Induction heating circuits for float zone refining of semiconductor rods
DE3143146A1 (de) * 1981-10-30 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen
DE3226713A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen
DE3229461A1 (de) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum tiegelfreien zonenschmelzen eines, insbesondere aus silicium bestehenden halbleiterstabes
DE3836239A1 (de) * 1988-10-25 1990-04-26 Deutsche Forsch Luft Raumfahrt Vorrichtung zum behaelterlosen positionieren und schmelzen von elektrisch leitenden materialien
JP2016157567A (ja) * 2015-02-24 2016-09-01 高周波熱錬株式会社 加熱装置及び加熱コイル

Also Published As

Publication number Publication date
DE1913881B2 (de) 1970-10-22
CH557199A (de) 1974-12-31
US3644151A (en) 1972-02-22
FR2039037A5 (de) 1971-01-08
NL6918529A (de) 1970-09-22
GB1256438A (en) 1971-12-08
DE1913881A1 (de) 1970-10-22

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