SE404975B - Metod for joninplantation i ett halvledarsubstrat - Google Patents

Metod for joninplantation i ett halvledarsubstrat

Info

Publication number
SE404975B
SE404975B SE7507114A SE7507114A SE404975B SE 404975 B SE404975 B SE 404975B SE 7507114 A SE7507114 A SE 7507114A SE 7507114 A SE7507114 A SE 7507114A SE 404975 B SE404975 B SE 404975B
Authority
SE
Sweden
Prior art keywords
semiconductor substrate
ion implantation
implantation
ion
semiconductor
Prior art date
Application number
SE7507114A
Other languages
English (en)
Swedish (sv)
Other versions
SE7507114L (sv
Inventor
W G Koenig
J S Makris
B J Masters
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SE7507114L publication Critical patent/SE7507114L/xx
Publication of SE404975B publication Critical patent/SE404975B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
SE7507114A 1974-07-15 1975-06-19 Metod for joninplantation i ett halvledarsubstrat SE404975B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/488,376 US3945856A (en) 1974-07-15 1974-07-15 Method of ion implantation through an electrically insulative material

Publications (2)

Publication Number Publication Date
SE7507114L SE7507114L (sv) 1976-01-16
SE404975B true SE404975B (sv) 1978-11-06

Family

ID=23939499

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7507114A SE404975B (sv) 1974-07-15 1975-06-19 Metod for joninplantation i ett halvledarsubstrat

Country Status (11)

Country Link
US (1) US3945856A (de)
JP (1) JPS5119475A (de)
BR (1) BR7504456A (de)
CA (1) CA1034683A (de)
CH (1) CH594987A5 (de)
DE (1) DE2531003B2 (de)
FR (1) FR2279223A1 (de)
GB (1) GB1457223A (de)
IT (1) IT1038940B (de)
NL (1) NL7507742A (de)
SE (1) SE404975B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
CA1131797A (en) * 1979-08-20 1982-09-14 Jagir S. Multani Fabrication of a semiconductor device in a simulated epitaxial layer
JPS56101757A (en) * 1980-01-18 1981-08-14 Mitsubishi Electric Corp Manufacture of semiconductor device
US4507159A (en) * 1981-10-07 1985-03-26 Advanced Micro Devices, Inc. Method of manufacturing high capacity semiconductor capacitance devices
US4567645A (en) * 1983-09-16 1986-02-04 International Business Machines Corporation Method for forming a buried subcollector in a semiconductor substrate by ion implantation
JPS60134478A (ja) * 1983-11-28 1985-07-17 ローム・コーポレーション 電気的プログラム式記憶装置を製造する方法
JPS60249319A (ja) * 1984-05-24 1985-12-10 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
US5021358A (en) * 1987-05-14 1991-06-04 North American Philips Corp. Signetics Division Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition
US5026437A (en) * 1990-01-22 1991-06-25 Tencor Instruments Cantilevered microtip manufacturing by ion implantation and etching
US5244819A (en) * 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices
US5316981A (en) * 1992-10-09 1994-05-31 Advanced Micro Devices, Inc. Method for achieving a high quality thin oxide using a sacrificial oxide anneal
US5362685A (en) * 1992-10-29 1994-11-08 Advanced Micro Devices, Inc. Method for achieving a high quality thin oxide in integrated circuit devices
US5498577A (en) * 1994-07-26 1996-03-12 Advanced Micro Devices, Inc. Method for fabricating thin oxides for a semiconductor technology
US5525529A (en) * 1994-11-16 1996-06-11 Texas Instruments Incorporated Method for reducing dopant diffusion
JP2007142134A (ja) * 2005-11-18 2007-06-07 Sumco Corp Ｓｏｉ基板の製造方法
CN113611600B (zh) * 2021-07-29 2024-08-23 上海华力微电子有限公司 半导体器件的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
GB1209914A (en) * 1967-03-29 1970-10-21 Marconi Co Ltd Improvements in or relating to semi-conductor devices
US3632438A (en) * 1967-09-29 1972-01-04 Texas Instruments Inc Method for increasing the stability of semiconductor devices
US3566519A (en) * 1968-04-01 1971-03-02 Sprague Electric Co Method of making field effect transistor device
US3704178A (en) * 1969-11-05 1972-11-28 Bryan H Hill Process for forming a p-n junction in a semiconductor material
US3717790A (en) * 1971-06-24 1973-02-20 Bell Telephone Labor Inc Ion implanted silicon diode array targets for electron beam camera tubes
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit

Also Published As

Publication number Publication date
DE2531003A1 (de) 1976-02-05
CA1034683A (en) 1978-07-11
SE7507114L (sv) 1976-01-16
AU8258175A (en) 1977-01-06
IT1038940B (it) 1979-11-30
US3945856A (en) 1976-03-23
DE2531003B2 (de) 1977-02-17
FR2279223A1 (fr) 1976-02-13
FR2279223B1 (de) 1979-04-27
JPS5119475A (en) 1976-02-16
NL7507742A (nl) 1976-01-19
GB1457223A (en) 1976-12-01
JPS5238385B2 (de) 1977-09-28
BR7504456A (pt) 1976-07-06
CH594987A5 (de) 1978-01-31

Similar Documents

Publication Publication Date Title
SE7507114L (sv) Metod for joninplantation i ett halvledarsubstrat
BG26398A3 (bg) Метод за получаване на n-фосфонометилглицин
GB2063524B (en) Method of positioning a wafer in a projection aligner
SE7608635L (sv) Metod och anordning for att styra berarlivslengden i halvledarkretsar
SE415312B (sv) Metod for trafikstyrning i ett digitalt kommunikationsvexelnet
IT1191118B (it) Metodo per creare una stretta scana latura o fessura in una regione di un substrato,in particolare una regione di un substrato,a carattere di semiconduttore
IT1055161B (it) Memoria a sola lettura a semiconduttore
FR2321768A2 (fr) Procede de fabrication d'une memoire a semi-conducteur
SE402745B (sv) Sett och anordning for att i lengdriktningen frammata ett fordon
FR2301092A1 (fr) Procede de fabrication d'un semi-conducteur et semi-conducteur obtenu
BE828188A (fr) Procede de fabrication d'un dispositif semi-conducteur
SE411814B (sv) Metod for tillverkning av integrerade kretsar med dielektriskt isolerade omraden utformade i ett kiselsubstrat
KR840005928A (ko) 반도체 장치의 제조방법
IT1042428B (it) Custodia per unita a semiconduttori
IT1033295B (it) Procedimento per fabbricare un dispositivo a semiconduttori
SE7415823L (sv) Anordning for instellning av ett verktyg
SE409247B (sv) Metanordning for bestemning av komponentkoncentrationer i ett provemne
IT1090514B (it) Dispositivo per posizionare un oggetto secondo un angolo predeterminato rispetto ad un piano di riferimento
GB1543737A (en) Method of manufacturing a semiconductor device
BE832455A (fr) Procede de fabrication de matiere semi-conductrice a dopage homogene
IT1039921B (it) Procedimento per fabbricare undispositivo a semiconduttori
FR2277809A1 (fr) Procede de fabrication d'un compose dicetonique
FI65813B (fi) Hydrometallurgisk metod foer behandling av nickelskaersten
FR2284205A1 (fr) Laser a injection a semi-conducteur
SE405183B (sv) Sett att tillverka ett halvledardon i form av ett inkapslat halvledarelement