SE434446B - Halvledaranordning med lag leckstrom - Google Patents

Halvledaranordning med lag leckstrom

Info

Publication number: SE434446B
Authority: SE; Sweden
Prior art keywords: region; substrate; area; charge carriers; recombination
Prior art date: 1976-12-03

Application number

SE7713184A

Other languages

English (en)

Swedish (sv)

Other versions

SE7713184L (sv

Inventor

F A Daltroy

A R Hartman

R M Jacobs

R L Pritchett

P W Shackle

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-12-03

Filing date

1977-11-22

Publication date

1984-07-23

1977-11-22 Application filed by Western Electric Co filed Critical Western Electric Co

1978-06-04 Publication of SE7713184L publication Critical patent/SE7713184L/

1984-07-23 Publication of SE434446B publication Critical patent/SE434446B/sv

Links

239000004065 semiconductor Substances 0.000 title claims description 23
239000000758 substrate Substances 0.000 claims description 51
239000002800 charge carrier Substances 0.000 claims description 24
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
238000005215 recombination Methods 0.000 claims description 22
230000006798 recombination Effects 0.000 claims description 22
239000000463 material Substances 0.000 claims description 6
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 2
230000005855 radiation Effects 0.000 claims description 2
WYUYEJNGHIOFOC-VVTVMFAVSA-N 2-[(z)-1-(4-methylphenyl)-3-pyrrolidin-1-ylprop-1-enyl]pyridine;hydrochloride Chemical compound Cl.C1=CC(C)=CC=C1C(\C=1N=CC=CC=1)=C\CN1CCCC1 WYUYEJNGHIOFOC-VVTVMFAVSA-N 0.000 claims 1
230000015556 catabolic process Effects 0.000 claims 1
239000004020 conductor Substances 0.000 description 18
239000010931 gold Substances 0.000 description 13
229910052737 gold Inorganic materials 0.000 description 13
238000000034 method Methods 0.000 description 7
230000008569 process Effects 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
238000009792 diffusion process Methods 0.000 description 5
238000005468 ion implantation Methods 0.000 description 4
229910052710 silicon Inorganic materials 0.000 description 4
239000010703 silicon Substances 0.000 description 4
239000000126 substance Substances 0.000 description 4
230000007704 transition Effects 0.000 description 4
229910004298 SiO 2 Inorganic materials 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
230000002452 interceptive effect Effects 0.000 description 2
239000011159 matrix material Substances 0.000 description 2
238000001465 metallisation Methods 0.000 description 2
244000045947 parasite Species 0.000 description 2
235000005747 Carum carvi Nutrition 0.000 description 1
240000000467 Carum carvi Species 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 description 1
230000002146 bilateral effect Effects 0.000 description 1
230000008033 biological extinction Effects 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
210000004899 c-terminal region Anatomy 0.000 description 1
239000002775 capsule Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
235000013305 food Nutrition 0.000 description 1
230000004927 fusion Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
230000009467 reduction Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

Thyristors (AREA)
Electronic Switches (AREA)
Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
Power Conversion In General (AREA)
Element Separation (AREA)
Interface Circuits In Exchanges (AREA)

SE7713184A 1976-12-03 1977-11-22 Halvledaranordning med lag leckstrom SE434446B (sv)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/747,366 US4130827A (en)	1976-12-03	1976-12-03	Integrated circuit switching network using low substrate leakage current thyristor construction

Publications (2)

Publication Number	Publication Date
SE7713184L SE7713184L (sv)	1978-06-04
SE434446B true SE434446B (sv)	1984-07-23

Family

ID=25004764

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE7713184A SE434446B (sv)	1976-12-03	1977-11-22	Halvledaranordning med lag leckstrom

Country Status (10)

Country	Link
US (1)	US4130827A (fr)
JP (1)	JPS5948556B2 (fr)
BE (1)	BE861272A (fr)
CA (1)	CA1095184A (fr)
DE (1)	DE2753320C2 (fr)
ES (1)	ES464707A1 (fr)
FR (1)	FR2373162A1 (fr)
GB (1)	GB1572379A (fr)
NL (1)	NL7713078A (fr)
SE (1)	SE434446B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2462028A1 (fr) *	1979-07-17	1981-02-06	Thomson Csf	Structure de thyristor pour circuit integre et son procede de fabrication
DE2942777A1 (de) *	1979-10-23	1981-05-07	Siemens AG, 1000 Berlin und 8000 München	Matrix-anordnung bistabiler schaltelemente
CA1145057A (fr) *	1979-12-28	1983-04-19	Adrian R. Hartman	Commutateur a semiconducteur pour hautes tensions
JPS5792860A (en) *	1980-12-01	1982-06-09	Hitachi Ltd	Manufacture of semiconductor integrated circuit device
US4467344A (en) *	1981-12-23	1984-08-21	At&T Bell Telephone Laboratories, Incorporated	Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US5066869A (en) *	1990-04-09	1991-11-19	Unitrode Corporation	Reset circuit with PNP saturation detector
GB2261795A (en) *	1991-11-22	1993-05-26	Motorola Israel Ltd	Signal routing
US5793126A (en) *	1995-11-29	1998-08-11	Elantec, Inc.	Power control chip with circuitry that isolates switching elements and bond wires for testing
US6137142A (en) *	1998-02-24	2000-10-24	Sun Microsystems, Inc.	MOS device structure and method for reducing PN junction leakage
TWI506776B (zh) *	2013-08-14	2015-11-01	Macronix Int Co Ltd	半導體裝置及其製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1073551A (en) *	1964-07-02	1967-06-28	Westinghouse Electric Corp	Integrated circuit comprising a diode and method of making the same
US3640783A (en) *	1969-08-11	1972-02-08	Trw Semiconductors Inc	Semiconductor devices with diffused platinum
JPS5019437B1 (fr) *	1970-06-08	1975-07-07
US3872493A (en) *	1972-08-25	1975-03-18	Westinghouse Electric Corp	Selective irradiation of junctioned semiconductor devices
US3786425A (en) *	1972-12-18	1974-01-15	Bell Telephone Labor Inc	Integrated circuit switching network providing crosspoint gain

1976
- 1976-12-03 US US05/747,366 patent/US4130827A/en not_active Expired - Lifetime
1977
- 1977-10-26 CA CA289,611A patent/CA1095184A/fr not_active Expired
- 1977-11-22 SE SE7713184A patent/SE434446B/sv not_active IP Right Cessation
- 1977-11-28 BE BE182983A patent/BE861272A/fr not_active IP Right Cessation
- 1977-11-28 NL NL7713078A patent/NL7713078A/xx not_active Application Discontinuation
- 1977-11-30 FR FR7736188A patent/FR2373162A1/fr active Granted
- 1977-11-30 DE DE2753320A patent/DE2753320C2/de not_active Expired
- 1977-12-01 GB GB50030/77A patent/GB1572379A/en not_active Expired
- 1977-12-02 ES ES464707A patent/ES464707A1/es not_active Expired
- 1977-12-03 JP JP52144641A patent/JPS5948556B2/ja not_active Expired

Also Published As

Publication number	Publication date
JPS5948556B2 (ja)	1984-11-27
US4130827A (en)	1978-12-19
DE2753320A1 (de)	1978-06-08
DE2753320C2 (de)	1984-08-30
NL7713078A (nl)	1978-06-06
FR2373162B1 (fr)	1982-04-23
SE7713184L (sv)	1978-06-04
ES464707A1 (es)	1978-07-01
JPS5370684A (en)	1978-06-23
FR2373162A1 (fr)	1978-06-30
GB1572379A (en)	1980-07-30
CA1095184A (fr)	1981-02-03
BE861272A (fr)	1978-03-16

Legal Events

Date

Code

Title

Description

1995-01-31

NUG

Patent has lapsed

Ref document number: 7713184-5

Effective date: 19880322

Format of ref document f/p: F

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