SE543632C2 - Perovskite photoelectronic device with defect passivation - Google Patents

Perovskite photoelectronic device with defect passivation

Info

Publication number
SE543632C2
SE543632C2 SE1950272A SE1950272A SE543632C2 SE 543632 C2 SE543632 C2 SE 543632C2 SE 1950272 A SE1950272 A SE 1950272A SE 1950272 A SE1950272 A SE 1950272A SE 543632 C2 SE543632 C2 SE 543632C2
Authority
SE
Sweden
Prior art keywords
perovskite
photoelectronic device
defect passivation
relates
passivation
Prior art date
Application number
SE1950272A
Other versions
SE1950272A1 (en
Inventor
Feng Gao
Weidong Xu
Original Assignee
Feng Gao
Weidong Xu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Feng Gao, Weidong Xu filed Critical Feng Gao
Priority to SE1950272A priority Critical patent/SE543632C2/en
Priority to EP20766113.3A priority patent/EP3931878A4/en
Priority to PCT/SE2020/050225 priority patent/WO2020180230A1/en
Priority to CN202080032884.2A priority patent/CN114072923B/en
Publication of SE1950272A1 publication Critical patent/SE1950272A1/en
Publication of SE543632C2 publication Critical patent/SE543632C2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Light Receiving Elements (AREA)
  • Luminescent Compositions (AREA)

Abstract

The present invention relates to optoelectronic devices based on a perovskite material comprising organic passivation agents for reducing unwanted recombination effects and to a method of producing such. In particular the invention relates to PeLED with exceptional high EQE up to 21.6%.
SE1950272A 2019-03-01 2019-03-01 Perovskite photoelectronic device with defect passivation SE543632C2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE1950272A SE543632C2 (en) 2019-03-01 2019-03-01 Perovskite photoelectronic device with defect passivation
EP20766113.3A EP3931878A4 (en) 2019-03-01 2020-02-28 DEFECT PASSIVATION PEROVSKITE PHOTOELECTRONIC DEVICE
PCT/SE2020/050225 WO2020180230A1 (en) 2019-03-01 2020-02-28 Perovskite photoelectronic device with defect passivation
CN202080032884.2A CN114072923B (en) 2019-03-01 2020-02-28 Perovskite optoelectronic devices with defect passivation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1950272A SE543632C2 (en) 2019-03-01 2019-03-01 Perovskite photoelectronic device with defect passivation

Publications (2)

Publication Number Publication Date
SE1950272A1 SE1950272A1 (en) 2020-09-02
SE543632C2 true SE543632C2 (en) 2021-04-27

Family

ID=72338049

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1950272A SE543632C2 (en) 2019-03-01 2019-03-01 Perovskite photoelectronic device with defect passivation

Country Status (4)

Country Link
EP (1) EP3931878A4 (en)
CN (1) CN114072923B (en)
SE (1) SE543632C2 (en)
WO (1) WO2020180230A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112885913A (en) * 2021-01-22 2021-06-01 苏州大学 Preparation method of perovskite quantum dot surface passivation layer suitable for HIT battery
CN113013333B (en) * 2021-02-24 2022-09-09 重庆大学 Application of multi-active-site ligand molecules in perovskite solar cells and preparation methods of devices
CN114188488A (en) * 2021-11-04 2022-03-15 华南师范大学 Perovskite luminescent layer, light emitting diode, preparation method and application thereof
CN114220922B (en) * 2021-11-18 2024-07-16 华中科技大学 A method for in-situ passivation of thermally evaporated perovskite materials
CN113999670B (en) * 2021-11-29 2024-07-23 复旦大学 A Lewis base modified colloidal metal halide perovskite and preparation method thereof
CN116096194B (en) * 2023-04-07 2023-08-18 合肥市旭熠科技有限公司 Novel method for preparing large-area perovskite film and application
CN121568497A (en) * 2026-01-22 2026-02-24 浙江大学 Perovskite light-emitting diode device based on interface reaction activation and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170283693A1 (en) * 2016-03-31 2017-10-05 Florida State University Research Foundation, Inc. Luminescent halide perovskites, methods, compositions, and devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2776161T3 (en) * 2013-12-17 2020-07-29 Univ Oxford Innovation Ltd Photovoltaic device comprising a metal halide perovskite and a passivating agent
JP2020506548A (en) * 2017-01-30 2020-02-27 ザ ガバニング カウンシル オブ ザ ユニバーシティ オブ トロント Contact passivation for perovskite optoelectronics
KR101899428B1 (en) * 2017-04-10 2018-09-17 울산과학기술원 Passivated perovsikite light-emitting diodes and preparation method thereof
CN108493343B (en) * 2018-04-04 2020-04-24 清华大学 Perovskite film, preparation method thereof and application of film in photoelectric device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170283693A1 (en) * 2016-03-31 2017-10-05 Florida State University Research Foundation, Inc. Luminescent halide perovskites, methods, compositions, and devices

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Zhao, Ting et al, "Defect passivation of organic-inorganic hybrid perovskite by diammonium iodide towards high-performance photovoltaic devices", ACS Energy Lett, 2016, 1, 757-763 *
Zhao, Ting et al, "Defect passivation of organic-inorganic hybrid perovskite by diammonium iodide towards high-performance photovoltaic devices, Supporting information", ACS Energy Lett, 2016, 1, 757-763 *
Zhongcheng, Yuan et al, "Unveiling the synergistic effect of precursor stoichiometry snd interfacial reactions got perovskite light-emitting diodes", Nature Communications (2019), 10(1), 1-9 *

Also Published As

Publication number Publication date
SE1950272A1 (en) 2020-09-02
CN114072923A (en) 2022-02-18
EP3931878A1 (en) 2022-01-05
CN114072923B (en) 2025-04-18
EP3931878A4 (en) 2023-03-01
WO2020180230A1 (en) 2020-09-10

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