SE7606368L - Integrerad kretsanordning - Google Patents

Integrerad kretsanordning

Info

Publication number
SE7606368L
SE7606368L SE7606368A SE7606368A SE7606368L SE 7606368 L SE7606368 L SE 7606368L SE 7606368 A SE7606368 A SE 7606368A SE 7606368 A SE7606368 A SE 7606368A SE 7606368 L SE7606368 L SE 7606368L
Authority
SE
Sweden
Prior art keywords
gate
transistors
integrated circuit
surrounded
frame
Prior art date
Application number
SE7606368A
Other languages
English (en)
Other versions
SE416599B (sv
Inventor
A G F Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7606368L publication Critical patent/SE7606368L/sv
Publication of SE416599B publication Critical patent/SE416599B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
SE7606368A 1975-06-11 1976-06-04 Integrerad kretsanordning och sett for dess tillverkning SE416599B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58587475A 1975-06-11 1975-06-11

Publications (2)

Publication Number Publication Date
SE7606368L true SE7606368L (sv) 1976-12-12
SE416599B SE416599B (sv) 1981-01-19

Family

ID=24343323

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7606368A SE416599B (sv) 1975-06-11 1976-06-04 Integrerad kretsanordning och sett for dess tillverkning

Country Status (15)

Country Link
JP (1) JPS5234677A (sv)
AU (1) AU497683B2 (sv)
BE (1) BE842774A (sv)
BR (1) BR7603615A (sv)
CA (1) CA1057413A (sv)
CH (1) CH620049A5 (sv)
DE (1) DE2625576A1 (sv)
FR (1) FR2314583A1 (sv)
GB (1) GB1526503A (sv)
HU (1) HU175524B (sv)
IN (1) IN144541B (sv)
IT (1) IT1079501B (sv)
NL (1) NL7606272A (sv)
SE (1) SE416599B (sv)
YU (1) YU139376A (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081896A (en) * 1977-04-11 1978-04-04 Rca Corporation Method of making a substrate contact for an integrated circuit
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (sv) * 1969-03-25 1970-09-29
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
FR2129827B1 (sv) * 1971-03-15 1976-09-03 Gen Electric
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5535869B2 (sv) * 1972-05-15 1980-09-17
JPS4921080A (sv) * 1972-06-15 1974-02-25

Also Published As

Publication number Publication date
CA1057413A (en) 1979-06-26
AU497683B2 (en) 1978-12-21
GB1526503A (en) 1978-09-27
BE842774A (nl) 1976-10-01
JPS5234677A (en) 1977-03-16
SE416599B (sv) 1981-01-19
FR2314583A1 (fr) 1977-01-07
IN144541B (sv) 1978-05-13
IT1079501B (it) 1985-05-13
FR2314583B1 (sv) 1982-09-17
DE2625576A1 (de) 1976-12-30
JPS574105B2 (sv) 1982-01-25
CH620049A5 (en) 1980-10-31
NL7606272A (nl) 1976-12-14
HU175524B (hu) 1980-08-28
YU139376A (en) 1983-04-27
AU1467576A (en) 1977-12-15
BR7603615A (pt) 1977-02-01

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