SE7806393L - Selektiv bestralning av tyristorer - Google Patents

Selektiv bestralning av tyristorer

Info

Publication number
SE7806393L
SE7806393L SE7806393A SE7806393A SE7806393L SE 7806393 L SE7806393 L SE 7806393L SE 7806393 A SE7806393 A SE 7806393A SE 7806393 A SE7806393 A SE 7806393A SE 7806393 L SE7806393 L SE 7806393L
Authority
SE
Sweden
Prior art keywords
thyristors
selective irradiation
irradiation
selective
Prior art date
Application number
SE7806393A
Other languages
English (en)
Inventor
W W Sheng
Y S E Sun
E G Tefft
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7806393L publication Critical patent/SE7806393L/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
SE7806393A 1977-09-02 1978-05-31 Selektiv bestralning av tyristorer SE7806393L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/830,190 US4134778A (en) 1977-09-02 1977-09-02 Selective irradiation of thyristors

Publications (1)

Publication Number Publication Date
SE7806393L true SE7806393L (sv) 1979-03-03

Family

ID=25256498

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7806393A SE7806393L (sv) 1977-09-02 1978-05-31 Selektiv bestralning av tyristorer

Country Status (7)

Country Link
US (1) US4134778A (sv)
JP (1) JPS5453873A (sv)
DE (1) DE2837762C2 (sv)
FR (1) FR2402302A1 (sv)
GB (1) GB1586396A (sv)
NL (1) NL7808991A (sv)
SE (1) SE7806393L (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478676A (en) * 1977-12-05 1979-06-22 Mitsubishi Electric Corp Manufacture of semiconductor device
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
US4230791A (en) * 1979-04-02 1980-10-28 General Electric Company Control of valley current in a unijunction transistor by electron irradiation
US4318750A (en) * 1979-12-28 1982-03-09 Westinghouse Electric Corp. Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4914045A (en) * 1985-12-19 1990-04-03 Teccor Electronics, Inc. Method of fabricating packaged TRIAC and trigger switch
JPH06349838A (ja) * 1993-06-08 1994-12-22 Toshiba Corp 半導体装置およびその製造方法
US6008092A (en) * 1996-02-12 1999-12-28 International Rectifier Corporation Short channel IGBT with improved forward voltage drop and improved switching power loss
JPH10270451A (ja) 1997-03-25 1998-10-09 Rohm Co Ltd 半導体装置およびその製造方法
CN114361255B (zh) * 2022-02-08 2025-11-04 西安派瑞功率半导体变流技术股份有限公司 一种双向精准击穿防爆晶闸管及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3881963A (en) * 1973-01-18 1975-05-06 Westinghouse Electric Corp Irradiation for fast switching thyristors
US3864174A (en) * 1973-01-22 1975-02-04 Nobuyuki Akiyama Method for manufacturing semiconductor device
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US3877997A (en) * 1973-03-20 1975-04-15 Westinghouse Electric Corp Selective irradiation for fast switching thyristor with low forward voltage drop
CA1006987A (en) * 1973-05-04 1977-03-15 Michael W. Cresswell Dynamic isolation of high density conductivity modulation states in integrated circuits
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
US4043837A (en) * 1975-01-10 1977-08-23 Westinghouse Electric Corporation Low forward voltage drop thyristor
JPS51139280A (en) * 1975-05-27 1976-12-01 Mitsubishi Electric Corp Semi-conductor device and method of manufacturing the same
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device

Also Published As

Publication number Publication date
US4134778A (en) 1979-01-16
FR2402302B1 (sv) 1981-12-11
DE2837762A1 (de) 1979-03-15
DE2837762C2 (de) 1985-01-10
GB1586396A (en) 1981-03-18
JPS5453873A (en) 1979-04-27
NL7808991A (nl) 1979-03-06
FR2402302A1 (fr) 1979-03-30

Similar Documents

Publication Publication Date Title
SE7809324L (sv) Behandling av forkolningsbart material
FI781614A7 (fi) Terapeutiska aemnen
DK151452C (da) Absorberende genstand
FI783460A7 (fi) Virvelbaeddfoerbraenning med foertorkning av fuktig inmatning under anvaendande av baeddsand
BR5501292U (pt) Boneco articulado
SE7803238L (sv) Behandling av strengsprutad termoplast
SE7801818L (sv) Bipoler elektrod
AT365002B (de) Hohlleitertwist
IT1156737B (it) Composti imidazoazinici ed imidazodiazinici
IT1099342B (it) Disposizione per la generazione ed irradiazione di microonde
PL207835A1 (pl) Sposob etylowania monoalkilobenzenu
FI783326A7 (fi) Terapeutiska aemnen
FI783704A7 (fi) Anordning foer gastaet genomfoering av elektroder i slutna elektriska smaeltugnar
IT1104622B (it) Composti 2-fenossi-5-trifluorometil piridinici e procedimento per prepararli
FI783090A7 (fi) Anordning foer infoerande av ledningar i elektriska uttag
FI773499A7 (fi) Foerbraenning av fast avfall med liten foerorening
NL7808991A (nl) Selectieve bestraling van thyristors.
FI783335A7 (fi) Behandlingshuvud foer elektromedicinsk diagnostisk eller terapeutisk behandling av kroppsdelar
SE7810711L (sv) Tyristoranordning
SE7803392L (sv) Anordning for utnyttjande av vagenergi
FI771209A7 (fi) Inloppslaoda i pappersmaskin foersett med luftbehaollare foer utjaemning av tryckvariationer i massasuspensionstroemmen
AT362226B (de) Sichter
SE7802656L (sv) Tyristoranordning
TR19245A (tr) 3-fenoksibenzaldehidlerin imali
DK81176A (da) Behandlet fromateriale