SE8003898L - Sperrskikts-felteffekttransistor - Google Patents

Sperrskikts-felteffekttransistor

Info

Publication number: SE8003898L
Authority: SE; Sweden
Prior art keywords: effect transistor; region; features; sperrskikts; felt
Prior art date: 1979-05-29

Application number

SE8003898A

Other languages

Unknown language ( )

English (en)

Swedish (sv)

Inventor

J Houthoff

J J Sips

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-05-29

Filing date

1980-05-27

Publication date

1980-11-30

1980-05-27 Application filed by Philips Nv filed Critical Philips Nv

1980-11-30 Publication of SE8003898L publication Critical patent/SE8003898L/

Links

239000000758 substrate Substances 0.000 abstract 2
230000005669 field effect Effects 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs

Landscapes

Junction Field-Effect Transistors (AREA)
Amplifiers (AREA)

SE8003898A 1979-05-29 1980-05-27 Sperrskikts-felteffekttransistor SE8003898L (sv)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
NL7904200A NL7904200A (nl)	1979-05-29	1979-05-29	Lagenveldeffecttransistor.

Publications (1)

Publication Number	Publication Date
SE8003898L true SE8003898L (sv)	1980-11-30

Family

ID=19833263

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE8003898A SE8003898L (sv)	1979-05-29	1980-05-27	Sperrskikts-felteffekttransistor

Country Status (11)

Country	Link
US (1)	US4498094A (nl)
JP (1)	JPS6044834B2 (nl)
AU (1)	AU537860B2 (nl)
CA (1)	CA1150854A (nl)
DE (1)	DE3019927A1 (nl)
ES (1)	ES8102418A1 (nl)
FR (1)	FR2458147B1 (nl)
GB (1)	GB2052860B (nl)
IT (1)	IT1130764B (nl)
NL (1)	NL7904200A (nl)
SE (1)	SE8003898L (nl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5957477A (ja) *	1982-09-27	1984-04-03	Fujitsu Ltd	半導体装置
US4622568A (en) *	1984-05-09	1986-11-11	Eaton Corporation	Planar field-shaped bidirectional power FET
JPH01123417A (ja) *	1987-11-07	1989-05-16	Mitsubishi Electric Corp	半導体装置の製造方法
AU643781B2 (en) *	1989-09-26	1993-11-25	Sumitomo Electric Industries, Ltd.	A semiconductor device
DE19644821C1 (de) *	1996-10-29	1998-02-12	Daimler Benz Ag	Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE638316A (nl) *	1962-10-15
US3316131A (en) *	1963-08-15	1967-04-25	Texas Instruments Inc	Method of producing a field-effect transistor
US3222810A (en) *	1964-06-23	1965-12-14	Daniel D Musgrave	Magazine loading clip
US3440500A (en) *	1966-09-26	1969-04-22	Itt	High frequency field effect transistor
US3656031A (en) *	1970-12-14	1972-04-11	Tektronix Inc	Low noise field effect transistor with channel having subsurface portion of high conductivity
US4112455A (en) *	1977-01-27	1978-09-05	The United States Of America As Represented By The Secretary Of The Navy	Field-effect transistor with extended linear logarithmic transconductance
US4119996A (en) *	1977-07-20	1978-10-10	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Complementary DMOS-VMOS integrated circuit structure
JPS5846863B2 (ja) *	1977-08-25	1983-10-19	松下電器産業株式会社	半導体集積回路装置
US4176368A (en) *	1978-10-10	1979-11-27	National Semiconductor Corporation	Junction field effect transistor for use in integrated circuits

1979
- 1979-05-29 NL NL7904200A patent/NL7904200A/nl not_active Application Discontinuation
1980
- 1980-05-22 CA CA000352541A patent/CA1150854A/en not_active Expired
- 1980-05-23 GB GB8017183A patent/GB2052860B/en not_active Expired
- 1980-05-23 FR FR8011593A patent/FR2458147B1/fr not_active Expired
- 1980-05-24 DE DE19803019927 patent/DE3019927A1/de not_active Ceased
- 1980-05-26 IT IT22325/80A patent/IT1130764B/it active
- 1980-05-27 SE SE8003898A patent/SE8003898L/ not_active Application Discontinuation
- 1980-05-27 AU AU58811/80A patent/AU537860B2/en not_active Ceased
- 1980-05-27 JP JP55069715A patent/JPS6044834B2/ja not_active Expired
- 1980-05-27 ES ES491862A patent/ES8102418A1/es not_active Expired
1982
- 1982-06-16 US US06/388,827 patent/US4498094A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
NL7904200A (nl)	1980-12-02
US4498094A (en)	1985-02-05
IT1130764B (it)	1986-06-18
ES491862A0 (es)	1980-12-16
CA1150854A (en)	1983-07-26
FR2458147A1 (fr)	1980-12-26
JPS55158676A (en)	1980-12-10
ES8102418A1 (es)	1980-12-16
AU5881180A (en)	1980-12-04
GB2052860B (en)	1983-06-29
AU537860B2 (en)	1984-07-19
DE3019927A1 (de)	1980-12-04
IT8022325A0 (it)	1980-05-26
FR2458147B1 (fr)	1985-10-31
JPS6044834B2 (ja)	1985-10-05
GB2052860A (en)	1981-01-28

Similar Documents

Publication	Publication Date	Title
CA1054675A (en)	1979-05-15	Flat-band voltage reference
US4499416A (en)	1985-02-12	Reference voltage circuit for obtaining a constant voltage irrespective of the fluctuations of a power supply voltage
ES361235A1 (es)	1970-08-16	Una disposicion de circuito de amplificador.
SE8003898L (sv)	1980-11-30	Sperrskikts-felteffekttransistor
CH631047B (fr)		Amplificateur pour signaux alternatifs.
Barsan	1981	Analysis and modeling of dual-gate MOSFET's
SE8301708D0 (sv)	1983-03-28	Temperature-independent gain control circuit
US3970951A (en)	1976-07-20	Differential amplifier with constant gain
SE8603364D0 (sv)	1986-08-08	Antisaturation circuit for integrated pnp transistor with intervention characteristic definible according to a preset function
JPS52117586A (en)	1977-10-03	Semiconductor device
GB1327298A (en)	1973-08-22	Insulated gate-field-effect transistor with variable gain
ATE78941T1 (de)	1992-08-15	Cml-vorspannungsregler.
SE7910152L (sv)	1980-06-19	Transistoranordning
GB1053428A (nl)
JPS54107246A (en)	1979-08-22	Analogue switch and sample hold circuit using it
Hartgring et al.	1980	A MESFET model for circuit analysis
US4012684A (en)	1977-03-15	Voltage regulator circuit with FET and bipolar transistors
GB2002980A (en)	1979-02-28	Field effect transistor circuits
KR880700349A (ko)	1988-02-22	전류원을 구비한 집적회로
Ronen et al.	1976	High-voltage SOS/MOS devices and circuit elements: Design, fabrication, and performance
GB1115142A (en)	1968-05-29	Improvements in or relating to ele ctrically adjustable voltage dividers
CH613357B (de)		Kristalloszillator.
JPS5593325A (en)	1980-07-15	Precharge circuit of mos transistor
JPS5643765A (en)	1981-04-22	Field-effect transistor
Morris	1976	Field-effect Transistors, Amplifiers and Logic Gates

Legal Events

Date	Code	Title	Description
1995-02-28	NAV	Patent application has lapsed	Ref document number: 8003898-7