SE8603761L - Drivkrets for effekt-mos-transistorer med n-kanal i mottaktssteg - Google Patents
Drivkrets for effekt-mos-transistorer med n-kanal i mottaktsstegInfo
- Publication number
- SE8603761L SE8603761L SE8603761A SE8603761A SE8603761L SE 8603761 L SE8603761 L SE 8603761L SE 8603761 A SE8603761 A SE 8603761A SE 8603761 A SE8603761 A SE 8603761A SE 8603761 L SE8603761 L SE 8603761L
- Authority
- SE
- Sweden
- Prior art keywords
- gate
- switch
- mos transistor
- transistors
- drive circuit
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Control Of Electrical Variables (AREA)
- Manipulation Of Pulses (AREA)
- Amplifiers (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8522105A IT1215309B (it) | 1985-09-10 | 1985-09-10 | Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE8603761D0 SE8603761D0 (sv) | 1986-09-09 |
| SE8603761L true SE8603761L (sv) | 1987-03-11 |
| SE467854B SE467854B (sv) | 1992-09-21 |
Family
ID=11191566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8603761A SE467854B (sv) | 1985-09-10 | 1986-09-09 | Drivkrets foer effekt-mos-transistorer med n-kanal i mottaktssteg |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4727465A (sv) |
| JP (1) | JP2673508B2 (sv) |
| DE (1) | DE3629612C2 (sv) |
| FR (1) | FR2587155B1 (sv) |
| GB (1) | GB2180422B (sv) |
| IT (1) | IT1215309B (sv) |
| NL (1) | NL192482C (sv) |
| SE (1) | SE467854B (sv) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4703407A (en) * | 1986-11-26 | 1987-10-27 | The Babcock & Wilcox Company | Power supply for totem pole power switches |
| US4779015A (en) * | 1987-05-26 | 1988-10-18 | International Business Machines Corporation | Low voltage swing CMOS receiver circuit |
| JPH0178430U (sv) * | 1987-11-16 | 1989-05-26 | ||
| NL8702847A (nl) * | 1987-11-27 | 1989-06-16 | Philips Nv | Dc-ac brugschakeling. |
| IT1228509B (it) * | 1988-10-28 | 1991-06-19 | Sgs Thomson Microelectronics | Dispositivo per generare una tensione di alimentazione flottante per un circuito bootstrap capacitivo |
| JPH02284516A (ja) * | 1989-04-25 | 1990-11-21 | Fujitsu Ltd | スイッチング回路 |
| DE69422164T2 (de) * | 1994-05-31 | 2000-04-20 | Stmicroelectronics S.R.L. A | Kapazitive Ladungspumpe, Bicmos Schaltung für niedrige Versorgungsspannung |
| US5543740A (en) * | 1995-04-10 | 1996-08-06 | Philips Electronics North America Corporation | Integrated half-bridge driver circuit |
| DE69633006T2 (de) * | 1995-11-07 | 2005-08-18 | Koninklijke Philips Electronics N.V. | Brückenschaltungsanordnung |
| US5754065A (en) * | 1995-11-07 | 1998-05-19 | Philips Electronics North America Corporation | Driving scheme for a bridge transistor |
| JPH09245191A (ja) * | 1996-03-06 | 1997-09-19 | Sega Enterp Ltd | 透明度変換方法及びその装置、画像処理装置 |
| DE19728283A1 (de) | 1997-07-02 | 1999-01-07 | Siemens Ag | Ansteuerschaltung für ein steuerbares Halbleiterbauelement |
| US6169431B1 (en) | 1998-06-02 | 2001-01-02 | Infineon Technologies Ag | Drive circuit for a controllable semiconductor component |
| US6856177B1 (en) * | 2003-07-22 | 2005-02-15 | International Rectifier Corporation | High side power switch with charge pump and bootstrap capacitor |
| JP4820544B2 (ja) * | 2004-10-27 | 2011-11-24 | 株式会社エヌエフ回路設計ブロック | リニア動作の電力増幅回路および電力増幅器 |
| JP2010135943A (ja) * | 2008-12-02 | 2010-06-17 | Seiko Epson Corp | 容量性負荷の充放電回路 |
| TWI523148B (zh) * | 2010-10-22 | 2016-02-21 | 國立交通大學 | 提升高電子遷移率電晶體元件崩潰電壓的方法 |
| US9041433B2 (en) | 2013-06-21 | 2015-05-26 | Infineon Technologies Austria Ag | System and method for driving transistors |
| TWI697197B (zh) | 2020-01-30 | 2020-06-21 | 群光電能科技股份有限公司 | 應用於馬達逆變器的閘極驅動電路及閘極驅動方法 |
| US20240396442A1 (en) * | 2023-05-25 | 2024-11-28 | Stmicroelectronics International N.V. | Charge pump integration in wireless charger power management integrated circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3018501A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Schalter mit einem als source-folger betriebenen mis-pet |
| USH97H (en) * | 1982-12-21 | 1986-08-05 | At&T Bell Laboratories | Row-address-decoder-driver circuit |
| EP0126788B1 (de) * | 1983-05-27 | 1987-06-03 | Deutsche ITT Industries GmbH | MOS-Bootstrap-Gegentaktstufe |
| US4550359A (en) * | 1984-02-10 | 1985-10-29 | Honeywell Inc. | Voltage transient protection circuit for MOSFET power transistors |
-
1985
- 1985-09-10 IT IT8522105A patent/IT1215309B/it active
-
1986
- 1986-08-18 US US06/897,467 patent/US4727465A/en not_active Expired - Lifetime
- 1986-08-30 DE DE3629612A patent/DE3629612C2/de not_active Expired - Fee Related
- 1986-09-03 NL NL8602229A patent/NL192482C/nl not_active IP Right Cessation
- 1986-09-04 FR FR868612444A patent/FR2587155B1/fr not_active Expired - Lifetime
- 1986-09-08 GB GB8621573A patent/GB2180422B/en not_active Expired
- 1986-09-09 SE SE8603761A patent/SE467854B/sv not_active IP Right Cessation
- 1986-09-09 JP JP61213711A patent/JP2673508B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6261421A (ja) | 1987-03-18 |
| SE467854B (sv) | 1992-09-21 |
| SE8603761D0 (sv) | 1986-09-09 |
| DE3629612A1 (de) | 1987-03-19 |
| NL8602229A (nl) | 1987-04-01 |
| NL192482B (nl) | 1997-04-01 |
| FR2587155B1 (fr) | 1991-11-29 |
| JP2673508B2 (ja) | 1997-11-05 |
| GB8621573D0 (en) | 1986-10-15 |
| IT1215309B (it) | 1990-01-31 |
| GB2180422A (en) | 1987-03-25 |
| GB2180422B (en) | 1989-08-16 |
| NL192482C (nl) | 1997-08-04 |
| DE3629612C2 (de) | 1995-04-20 |
| FR2587155A1 (fr) | 1987-03-13 |
| US4727465A (en) | 1988-02-23 |
| IT8522105A0 (it) | 1985-09-10 |
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