SE9701156L - Förfarande och anordning avseende halvledarkomponenter - Google Patents

Förfarande och anordning avseende halvledarkomponenter

Info

Publication number
SE9701156L
SE9701156L SE9701156A SE9701156A SE9701156L SE 9701156 L SE9701156 L SE 9701156L SE 9701156 A SE9701156 A SE 9701156A SE 9701156 A SE9701156 A SE 9701156A SE 9701156 L SE9701156 L SE 9701156L
Authority
SE
Sweden
Prior art keywords
electrical component
semiconductor components
conducting region
intermediate conducting
occurring
Prior art date
Application number
SE9701156A
Other languages
Unknown language ( )
English (en)
Other versions
SE9701156D0 (sv
SE522812C2 (sv
Inventor
Haakan Sjoedin
Anders Soederbaerg
Nils Oegren
Ivar Hamberg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9701156A priority Critical patent/SE522812C2/sv
Publication of SE9701156D0 publication Critical patent/SE9701156D0/sv
Priority to TW086105153A priority patent/TW358235B/zh
Priority to US09/045,636 priority patent/US6121668A/en
Priority to EP98912854A priority patent/EP1018161B1/en
Priority to AU67542/98A priority patent/AU6754298A/en
Priority to CA002285278A priority patent/CA2285278A1/en
Priority to JP54154298A priority patent/JP2002508886A/ja
Priority to KR1019997008731A priority patent/KR20010005663A/ko
Priority to PCT/SE1998/000534 priority patent/WO1998044558A1/en
Priority to CN98805461.2A priority patent/CN1257611A/zh
Priority to DE69835825T priority patent/DE69835825T2/de
Publication of SE9701156L publication Critical patent/SE9701156L/sv
Priority to US09/236,001 priority patent/US6300173B1/en
Publication of SE522812C2 publication Critical patent/SE522812C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
SE9701156A 1997-03-27 1997-03-27 Anordning och förfarande för att reducera elektriska fältkoncentrationer i elektriska komponenter SE522812C2 (sv)

Priority Applications (12)

Application Number Priority Date Filing Date Title
SE9701156A SE522812C2 (sv) 1997-03-27 1997-03-27 Anordning och förfarande för att reducera elektriska fältkoncentrationer i elektriska komponenter
TW086105153A TW358235B (en) 1997-03-27 1997-04-21 Reduction of field constriction
US09/045,636 US6121668A (en) 1997-03-27 1998-03-23 Semiconductor device provided with conductor electrically connected to conducting region
DE69835825T DE69835825T2 (de) 1997-03-27 1998-03-24 Verfahren und bauelement zur verringerung von elektrischen feldkonzentrationen in soi halbleiterkomponenten
JP54154298A JP2002508886A (ja) 1997-03-27 1998-03-24 Ｓｏｉ半導体構成要素における電界集中を減少するための方法及び装置
AU67542/98A AU6754298A (en) 1997-03-27 1998-03-24 Method and device for reducing electric field concentrations in soi semiconductor components
CA002285278A CA2285278A1 (en) 1997-03-27 1998-03-24 Method and device for reducing electric field concentrations in soi semiconductor components
EP98912854A EP1018161B1 (en) 1997-03-27 1998-03-24 Method and device for reducing electric field concentrations in soi semiconductor components
KR1019997008731A KR20010005663A (ko) 1997-03-27 1998-03-24 Soi 반도체 부품에서 전기장 집중을 감소시키는 장치 및 방법
PCT/SE1998/000534 WO1998044558A1 (en) 1997-03-27 1998-03-24 Method and device for reducing electric field concentrations in soi semiconductor components
CN98805461.2A CN1257611A (zh) 1997-03-27 1998-03-24 减小绝缘体基外延硅半导体元件中电场强度的方法和器件
US09/236,001 US6300173B1 (en) 1997-03-27 1999-01-22 Method and device relating to semiconductor components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9701156A SE522812C2 (sv) 1997-03-27 1997-03-27 Anordning och förfarande för att reducera elektriska fältkoncentrationer i elektriska komponenter

Publications (3)

Publication Number Publication Date
SE9701156D0 SE9701156D0 (sv) 1997-03-27
SE9701156L true SE9701156L (sv) 1998-09-28
SE522812C2 SE522812C2 (sv) 2004-03-09

Family

ID=20406363

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9701156A SE522812C2 (sv) 1997-03-27 1997-03-27 Anordning och förfarande för att reducera elektriska fältkoncentrationer i elektriska komponenter

Country Status (11)

Country Link
US (2) US6121668A (sv)
EP (1) EP1018161B1 (sv)
JP (1) JP2002508886A (sv)
KR (1) KR20010005663A (sv)
CN (1) CN1257611A (sv)
AU (1) AU6754298A (sv)
CA (1) CA2285278A1 (sv)
DE (1) DE69835825T2 (sv)
SE (1) SE522812C2 (sv)
TW (1) TW358235B (sv)
WO (1) WO1998044558A1 (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2851370B1 (fr) * 2003-02-19 2006-02-03 St Microelectronics Sa Procede de traitement par faisceau d'ions focalise et dispositif semi-conducteur convenant pour sa mise en oeuvre
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
DE102007029756A1 (de) * 2007-06-27 2009-01-02 X-Fab Semiconductor Foundries Ag Halbleiterstruktur zur Herstellung eines Trägerwaferkontaktes in grabenisolierten SOI-Scheiben
CN102110708A (zh) * 2011-01-14 2011-06-29 北方工业大学 高压隔离槽及其制作方法及mos器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5070388A (en) * 1990-01-19 1991-12-03 Harris Corporation Trench-resident interconnect structure
DE4233773C2 (de) * 1992-10-07 1996-09-19 Daimler Benz Ag Halbleiterstruktur für Halbleiterbauelemente mit hoher Durchbruchspannung
EP0628996B1 (en) * 1992-12-25 1999-05-12 Denso Corporation High withstand-voltage semiconductor device with dielectric isolation
JPH06268054A (ja) * 1993-03-10 1994-09-22 Nippondenso Co Ltd 半導体装置
US5373183A (en) * 1993-04-28 1994-12-13 Harris Corporation Integrated circuit with improved reverse bias breakdown
US6008512A (en) * 1993-04-28 1999-12-28 Intersil Corporation Semiconductor device with increased maximum terminal voltage
JP2773611B2 (ja) * 1993-11-17 1998-07-09 株式会社デンソー 絶縁物分離半導体装置
JPH07311515A (ja) * 1994-05-18 1995-11-28 Fujitsu Ltd シリアル型電子写真装置

Also Published As

Publication number Publication date
DE69835825T2 (de) 2007-03-01
SE9701156D0 (sv) 1997-03-27
JP2002508886A (ja) 2002-03-19
SE522812C2 (sv) 2004-03-09
CA2285278A1 (en) 1998-10-08
US6300173B1 (en) 2001-10-09
US6121668A (en) 2000-09-19
KR20010005663A (ko) 2001-01-15
WO1998044558A1 (en) 1998-10-08
CN1257611A (zh) 2000-06-21
AU6754298A (en) 1998-10-22
EP1018161B1 (en) 2006-09-06
EP1018161A1 (en) 2000-07-12
TW358235B (en) 1999-05-11
DE69835825D1 (de) 2006-10-19

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