SG10201400531YA - Semiconductor Wafer With A Layer Of AlzGa1-zN And Process For Producing It - Google Patents
Semiconductor Wafer With A Layer Of AlzGa1-zN And Process For Producing ItInfo
- Publication number
- SG10201400531YA SG10201400531YA SG10201400531YA SG10201400531YA SG10201400531YA SG 10201400531Y A SG10201400531Y A SG 10201400531YA SG 10201400531Y A SG10201400531Y A SG 10201400531YA SG 10201400531Y A SG10201400531Y A SG 10201400531YA SG 10201400531Y A SG10201400531Y A SG 10201400531YA
- Authority
- SG
- Singapore
- Prior art keywords
- alzga1
- producing
- layer
- semiconductor wafer
- wafer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2926—Crystal orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3238—Materials thereof being insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3248—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3258—Crystal orientation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3416—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3466—Crystal orientation
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20130158844 EP2779213B1 (en) | 2013-03-12 | 2013-03-12 | Semiconductor wafer with a layer of AlzGa1-zN and process for producing it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201400531YA true SG10201400531YA (en) | 2014-10-30 |
Family
ID=47877882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201400531YA SG10201400531YA (en) | 2013-03-12 | 2014-03-11 | Semiconductor Wafer With A Layer Of AlzGa1-zN And Process For Producing It |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9147726B2 (ja) |
| EP (1) | EP2779213B1 (ja) |
| JP (1) | JP5938428B2 (ja) |
| KR (1) | KR101556054B1 (ja) |
| CN (1) | CN104051232B (ja) |
| MY (1) | MY185237A (ja) |
| SG (1) | SG10201400531YA (ja) |
| TW (1) | TWI524552B (ja) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014057748A1 (ja) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法 |
| EP3051575A1 (en) * | 2015-01-30 | 2016-08-03 | Siltronic AG | Semiconductor wafer comprising a monocrystalline group-IIIA nitride layer |
| KR102547293B1 (ko) | 2015-02-10 | 2023-06-23 | 아이빔 머티리얼스 인코퍼레이티드 | 이온 빔 보조 증착 텍스처드 기판의 에피택셜 육각형 재료 |
| US10243105B2 (en) | 2015-02-10 | 2019-03-26 | iBeam Materials, Inc. | Group-III nitride devices and systems on IBAD-textured substrates |
| USRE49869E1 (en) | 2015-02-10 | 2024-03-12 | iBeam Materials, Inc. | Group-III nitride devices and systems on IBAD-textured substrates |
| US10581398B2 (en) * | 2016-03-11 | 2020-03-03 | Akoustis, Inc. | Method of manufacture for single crystal acoustic resonator devices using micro-vias |
| WO2017165197A1 (en) * | 2016-03-23 | 2017-09-28 | IQE, plc | Epitaxial metal oxide as buffer for epitaxial iii-v layers |
| WO2018004666A1 (en) * | 2016-07-01 | 2018-01-04 | Intel Corporation | Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline iii-n semiconductor transistor devices |
| US10283597B2 (en) * | 2016-11-10 | 2019-05-07 | The United States Of America, As Represented By The Secretary Of The Navy | Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materials |
| US10192959B2 (en) * | 2017-01-23 | 2019-01-29 | Imec Vzw | III-N based substrate for power electronic devices and method for manufacturing same |
| US11557716B2 (en) * | 2018-02-20 | 2023-01-17 | Akoustis, Inc. | Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction |
| US10890712B2 (en) | 2018-05-11 | 2021-01-12 | Raytheon Bbn Technologies Corp. | Photonic and electric devices on a common layer |
| US11054673B2 (en) | 2018-05-11 | 2021-07-06 | Raytheon Bbn Technologies Corp. | Photonic devices |
| CN110491771A (zh) * | 2019-07-11 | 2019-11-22 | 华南理工大学 | 金属氧化物薄膜晶体管及其制备方法和钝化层的制备方法 |
| CN112735944A (zh) * | 2021-01-05 | 2021-04-30 | 西安电子科技大学 | 氮极性面GaN材料及其制作方法 |
| KR20240168970A (ko) * | 2022-03-31 | 2024-12-02 | 도소 가부시키가이샤 | 질화알루미늄 스칸듐막 및 강유전체 소자 |
| GB2631916B (en) * | 2023-06-22 | 2026-04-08 | Iqe Plc | A semiconductor structure |
| CN117810328A (zh) * | 2023-12-29 | 2024-04-02 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
| WO2025155387A1 (en) * | 2024-01-17 | 2025-07-24 | La Luce Cristallina Inc. | Twin-free, small lattice parameter perovskite pseudo-substrates on silicon carrier wafers and fabrication methods therefor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Ｔｄｋ株式会社 | 電子デバイス用基板 |
| US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| EP1975988B1 (en) * | 2007-03-28 | 2015-02-25 | Siltronic AG | Multilayered semiconductor wafer and process for its production |
| JP4597259B2 (ja) * | 2009-03-27 | 2010-12-15 | Ｄｏｗａホールディングス株式会社 | Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法 |
| WO2012176411A1 (ja) * | 2011-06-24 | 2012-12-27 | 住友化学株式会社 | トランジスタ用半導体基板、トランジスタ及びトランジスタ用半導体基板の製造方法 |
-
2013
- 2013-03-12 EP EP20130158844 patent/EP2779213B1/en active Active
-
2014
- 2014-03-05 US US14/197,296 patent/US9147726B2/en active Active
- 2014-03-06 JP JP2014043708A patent/JP5938428B2/ja active Active
- 2014-03-10 KR KR1020140027875A patent/KR101556054B1/ko active Active
- 2014-03-10 MY MYPI2014000679A patent/MY185237A/en unknown
- 2014-03-11 CN CN201410087745.6A patent/CN104051232B/zh active Active
- 2014-03-11 SG SG10201400531YA patent/SG10201400531YA/en unknown
- 2014-03-12 TW TW103108616A patent/TWI524552B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI524552B (zh) | 2016-03-01 |
| JP2014209576A (ja) | 2014-11-06 |
| US9147726B2 (en) | 2015-09-29 |
| MY185237A (en) | 2021-04-30 |
| US20140264776A1 (en) | 2014-09-18 |
| KR101556054B1 (ko) | 2015-09-25 |
| EP2779213B1 (en) | 2015-05-06 |
| JP5938428B2 (ja) | 2016-06-22 |
| KR20140111971A (ko) | 2014-09-22 |
| EP2779213A1 (en) | 2014-09-17 |
| CN104051232B (zh) | 2017-04-12 |
| CN104051232A (zh) | 2014-09-17 |
| TW201436282A (zh) | 2014-09-16 |
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