SG109486A1 - Method of extreme ultraviolet mask engineering - Google Patents

Method of extreme ultraviolet mask engineering

Info

Publication number
SG109486A1
SG109486A1 SG200200116A SG200200116A SG109486A1 SG 109486 A1 SG109486 A1 SG 109486A1 SG 200200116 A SG200200116 A SG 200200116A SG 200200116 A SG200200116 A SG 200200116A SG 109486 A1 SG109486 A1 SG 109486A1
Authority
SG
Singapore
Prior art keywords
extreme ultraviolet
ultraviolet mask
engineering
mask engineering
extreme
Prior art date
Application number
SG200200116A
Other languages
English (en)
Inventor
Gupta Subhash
Sheng Zhou Mei
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG109486A1 publication Critical patent/SG109486A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
SG200200116A 2001-02-20 2002-01-08 Method of extreme ultraviolet mask engineering SG109486A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/785,116 US6656643B2 (en) 2001-02-20 2001-02-20 Method of extreme ultraviolet mask engineering

Publications (1)

Publication Number Publication Date
SG109486A1 true SG109486A1 (en) 2005-03-30

Family

ID=25134492

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200200116A SG109486A1 (en) 2001-02-20 2002-01-08 Method of extreme ultraviolet mask engineering

Country Status (4)

Country Link
US (1) US6656643B2 (fr)
EP (1) EP1237041A3 (fr)
JP (1) JP2002261005A (fr)
SG (1) SG109486A1 (fr)

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US6607862B2 (en) * 2001-08-24 2003-08-19 Intel Corporation Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making
JP3674591B2 (ja) * 2002-02-25 2005-07-20 ソニー株式会社 露光用マスクの製造方法および露光用マスク
US6756163B2 (en) * 2002-06-27 2004-06-29 Intel Corporation Re-usable extreme ultraviolet lithography multilayer mask blank
US6867846B2 (en) 2003-01-15 2005-03-15 Asml Holding Nv Tailored reflecting diffractor for EUV lithographic system aberration measurement
US7027164B2 (en) 2003-01-15 2006-04-11 Asml Holding N.V. Speckle reduction method and system for EUV interferometry
US7002747B2 (en) 2003-01-15 2006-02-21 Asml Holding N.V. Diffuser plate and method of making same
US7268891B2 (en) 2003-01-15 2007-09-11 Asml Holding N.V. Transmission shear grating in checkerboard configuration for EUV wavefront sensor
US7049035B2 (en) * 2003-11-17 2006-05-23 International Business Machines Corporation Method for controlling linewidth in advanced lithography masks using electrochemistry
US20050109278A1 (en) * 2003-11-26 2005-05-26 Ted Liang Method to locally protect extreme ultraviolet multilayer blanks used for lithography
KR100735531B1 (ko) 2006-03-21 2007-07-04 삼성전자주식회사 보상 패턴을 포함하는 반사형 포토마스크와 그 제조방법 및반사형 블랭크 포토마스크
KR101097026B1 (ko) * 2010-02-01 2011-12-20 주식회사 하이닉스반도체 Ｅｕｖ 마스크 및 그 형성방법
WO2011157643A1 (fr) * 2010-06-15 2011-12-22 Carl Zeiss Smt Gmbh Masque pour une lithographie par ultraviolets extrêmes, système de lithographie par ultraviolets extrêmes et procédé pour optimiser l'imagerie d'un masque
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9791771B2 (en) 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
SG11201903409SA (en) * 2016-10-21 2019-05-30 Hoya Corp Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
KR102698817B1 (ko) * 2017-03-02 2024-08-27 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
EP3454119B1 (fr) 2017-09-09 2023-12-27 IMEC vzw Alliages absorbant l'uv extrême
EP3454120B1 (fr) * 2017-09-09 2024-05-01 IMEC vzw Méthode pour la fabrication de réticules euv et réticules pour lithographie euv
JP2020034666A (ja) * 2018-08-29 2020-03-05 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2022164760A1 (fr) * 2021-01-29 2022-08-04 The Regents Of The University Of California Couches absorbantes de masque pour la lithographie par ultraviolets extrêmes

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US5248636A (en) * 1987-07-16 1993-09-28 Texas Instruments Incorporated Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation
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JPH07240364A (ja) 1994-03-02 1995-09-12 Canon Inc 反射型マスク、その製造方法及び該マスクを用いた露光装置
US5521031A (en) 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5891350A (en) 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
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US5667650A (en) 1995-02-14 1997-09-16 E. I. Du Pont De Nemours And Company High flow gas manifold for high rate, off-axis sputter deposition
KR0172237B1 (ko) 1995-06-26 1999-03-30 김주용 반도체 소자의 미세패턴 형성방법
WO1997033300A1 (fr) 1996-03-06 1997-09-12 Mattson Technology, Inc. Reacteur a plasma inductif a section generatrice de plasma de forme conique
US6562544B1 (en) 1996-11-04 2003-05-13 Applied Materials, Inc. Method and apparatus for improving accuracy in photolithographic processing of substrates
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US5935737A (en) 1997-12-22 1999-08-10 Intel Corporation Method for eliminating final euv mask repairs in the reflector region
US5958629A (en) 1997-12-22 1999-09-28 Intel Corporation Using thin films as etch stop in EUV mask fabrication process
US6355381B1 (en) * 1998-09-25 2002-03-12 Intel Corporation Method to fabricate extreme ultraviolet lithography masks
JP2002530885A (ja) 1998-11-25 2002-09-17 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 半導体製造における金属形状のパターニングのためのシランベース酸化物反射防止膜
US6013399A (en) * 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
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JP2001057328A (ja) * 1999-08-18 2001-02-27 Nikon Corp 反射マスク、露光装置および集積回路の製造方法

Also Published As

Publication number Publication date
US6656643B2 (en) 2003-12-02
JP2002261005A (ja) 2002-09-13
EP1237041A3 (fr) 2002-10-23
EP1237041A2 (fr) 2002-09-04
US20020115000A1 (en) 2002-08-22

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