SG11201402006SA - Member for semiconductor manufacturing device - Google Patents

Member for semiconductor manufacturing device

Info

Publication number
SG11201402006SA
SG11201402006SA SG11201402006SA SG11201402006SA SG11201402006SA SG 11201402006S A SG11201402006S A SG 11201402006SA SG 11201402006S A SG11201402006S A SG 11201402006SA SG 11201402006S A SG11201402006S A SG 11201402006SA SG 11201402006S A SG11201402006S A SG 11201402006SA
Authority
SG
Singapore
Prior art keywords
semiconductor manufacturing
manufacturing device
semiconductor
manufacturing
Prior art date
Application number
SG11201402006SA
Inventor
Mitsuharu Inaba
Hiroki Yokota
Keisuke Yamada
Original Assignee
Tocalo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tocalo Co Ltd filed Critical Tocalo Co Ltd
Publication of SG11201402006SA publication Critical patent/SG11201402006SA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • B23K15/06Electron-beam welding or cutting within a vacuum chamber
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/34Laser welding for purposes other than joining
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568Modifying rugosity
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18After-treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic materials other than metals or composite materials
    • B23K2103/52Ceramics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/23Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201402006SA 2011-11-02 2012-04-11 Member for semiconductor manufacturing device SG11201402006SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011240856A JP2013095973A (en) 2011-11-02 2011-11-02 Member for semiconductor manufacturing device
PCT/JP2012/059860 WO2013065338A1 (en) 2011-11-02 2012-04-11 Member for semiconductor manufacturing device

Publications (1)

Publication Number Publication Date
SG11201402006SA true SG11201402006SA (en) 2014-11-27

Family

ID=48191707

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201402006SA SG11201402006SA (en) 2011-11-02 2012-04-11 Member for semiconductor manufacturing device

Country Status (7)

Country Link
US (1) US20140300064A1 (en)
JP (1) JP2013095973A (en)
KR (1) KR20140088500A (en)
CN (1) CN103890224A (en)
SG (1) SG11201402006SA (en)
TW (1) TW201320219A (en)
WO (1) WO2013065338A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI541928B (en) * 2011-10-14 2016-07-11 晶元光電股份有限公司 Wafer carrier
KR101465640B1 (en) * 2014-08-08 2014-11-28 주식회사 펨빅스 CVD Process Chamber Components with Anti-AlF3 Coating Layer
KR101765025B1 (en) * 2014-10-02 2017-08-03 신닛테츠스미킨 카부시키카이샤 Hearth roll and manufacturing method therefor
CN104630768A (en) * 2015-01-16 2015-05-20 芜湖三联锻造有限公司 Hot-forging die surface composite strengthening method
DE102015007216B4 (en) * 2015-06-03 2023-07-20 Asml Netherlands B.V. Method for producing a holding plate, in particular for a clamp for holding wafers, method for producing a holding device for holding a component, holding plate and holding device
EP3334566B1 (en) 2015-08-14 2021-11-24 M Cubed Technologies Inc. Wafer chuck featuring reduced friction support surface
CN111201208B (en) 2017-10-05 2023-05-23 阔斯泰公司 Alumina sintered body and method for producing same
KR102354650B1 (en) 2017-10-05 2022-01-24 쿠어스택 가부시키가이샤 Alumina sintered compact and manufacturing method thereof
EP3728682A4 (en) * 2017-12-19 2021-07-21 Oerlikon Metco (US) Inc. EROSION- AND CMAS-RESISTANT COATING TO PROTECT EBC AND CMC-LAYERS AND THERMAL SPRAY COATING PROCESS
US11458572B2 (en) 2019-05-16 2022-10-04 Caterpillar Inc. Laser smoothing
CN111057987A (en) * 2019-12-20 2020-04-24 东方电气集团东方汽轮机有限公司 A kind of preparation method of high-temperature wear-resistant coating for flat-panel gas turbine products

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274062A (en) * 1986-05-23 1987-11-28 Toyota Motor Corp Production of ceramic coated member
JPH04380A (en) * 1990-04-16 1992-01-06 Dai Ichi High Frequency Co Ltd Formation of thermally sprayed film having high corrosion and heat resistance
JPH06212392A (en) * 1993-01-18 1994-08-02 Nippon Alum Co Ltd Method for sealing thermal-sprayed coating
JPH0722489A (en) * 1993-06-29 1995-01-24 Toshiba Corp Wafer fork
JPH08158034A (en) * 1994-12-01 1996-06-18 Nittetsu Hard Kk Strengthening of sprayed coating
JPH09327779A (en) * 1996-06-07 1997-12-22 Mitsubishi Heavy Ind Ltd Method for forming crack in ceramic film, and ceramic film parts formed by the method
US6723674B2 (en) * 2000-09-22 2004-04-20 Inframat Corporation Multi-component ceramic compositions and method of manufacture thereof
JP4277973B2 (en) * 2001-07-19 2009-06-10 日本碍子株式会社 Yttria-alumina composite oxide film production method, yttria-alumina composite oxide film, and corrosion-resistant member
JP3649210B2 (en) * 2002-06-07 2005-05-18 株式会社日本セラテック Corrosion resistant material
JP4434667B2 (en) * 2002-09-06 2010-03-17 関西電力株式会社 Manufacturing method of heat shielding ceramic coating parts
JP5324029B2 (en) * 2006-03-20 2013-10-23 東京エレクトロン株式会社 Ceramic coating for semiconductor processing equipment
JP4643478B2 (en) * 2006-03-20 2011-03-02 トーカロ株式会社 Manufacturing method of ceramic covering member for semiconductor processing equipment
JP4996868B2 (en) * 2006-03-20 2012-08-08 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
KR20140088500A (en) 2014-07-10
WO2013065338A1 (en) 2013-05-10
TW201320219A (en) 2013-05-16
JP2013095973A (en) 2013-05-20
CN103890224A (en) 2014-06-25
US20140300064A1 (en) 2014-10-09

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