SG11201607490RA - Via deposition process on substrate and semiconductor processing apparatus - Google Patents
Via deposition process on substrate and semiconductor processing apparatusInfo
- Publication number
- SG11201607490RA SG11201607490RA SG11201607490RA SG11201607490RA SG11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- processing apparatus
- deposition process
- semiconductor processing
- via deposition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410150706.6A CN105088151A (en) | 2014-04-15 | 2014-04-15 | Pore deposition process on substrate, and semiconductor processing equipment |
| PCT/CN2014/094380 WO2015158152A1 (en) | 2014-04-15 | 2014-12-19 | Pore deposition process on substrate and semiconductor processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201607490RA true SG11201607490RA (en) | 2016-10-28 |
Family
ID=54323461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201607490RA SG11201607490RA (en) | 2014-04-15 | 2014-12-19 | Via deposition process on substrate and semiconductor processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20160138296A (en) |
| CN (1) | CN105088151A (en) |
| SG (1) | SG11201607490RA (en) |
| WO (1) | WO2015158152A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113921456A (en) * | 2021-09-30 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and wafer processing method |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07105441B2 (en) * | 1992-11-30 | 1995-11-13 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US5639357A (en) * | 1994-05-12 | 1997-06-17 | Applied Materials | Synchronous modulation bias sputter method and apparatus for complete planarization of metal films |
| JPH1098041A (en) * | 1996-09-25 | 1998-04-14 | Denso Corp | Manufacture of semiconductor device |
| US6387805B2 (en) * | 1997-05-08 | 2002-05-14 | Applied Materials, Inc. | Copper alloy seed layer for copper metallization |
| JP2002075895A (en) * | 2000-08-25 | 2002-03-15 | Anelva Corp | Sputtering equipment for reflow |
| CN1697137A (en) * | 2004-05-12 | 2005-11-16 | 上海先进半导体制造有限公司 | Method for depositing aluminum to fill in hole in sub micron size applied to semiconductor technology |
| KR101433899B1 (en) * | 2008-04-03 | 2014-08-29 | 삼성전자주식회사 | Method for forming metallic layer on portion etched of substrate, the substrate having the metallic layer formed using the same and a structure formed using the same |
| JP4761326B2 (en) * | 2010-01-15 | 2011-08-31 | シャープ株式会社 | Thin film forming apparatus system and thin film forming method |
| US8841211B2 (en) * | 2010-06-09 | 2014-09-23 | Applied Materials, Inc. | Methods for forming interconnect structures |
| CN102560388A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetic control sputtering equipment |
| CN103094156B (en) * | 2011-11-03 | 2016-02-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate processing equipment and chamber device thereof and substrate heating method |
| JP6150438B2 (en) * | 2014-06-20 | 2017-06-21 | 京セラドキュメントソリューションズ株式会社 | Optical scanning device and image forming apparatus having the same |
-
2014
- 2014-04-15 CN CN201410150706.6A patent/CN105088151A/en active Pending
- 2014-12-19 SG SG11201607490RA patent/SG11201607490RA/en unknown
- 2014-12-19 KR KR1020167030766A patent/KR20160138296A/en not_active Ceased
- 2014-12-19 WO PCT/CN2014/094380 patent/WO2015158152A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015158152A1 (en) | 2015-10-22 |
| KR20160138296A (en) | 2016-12-02 |
| CN105088151A (en) | 2015-11-25 |
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