SG11201801847SA - Copper paste for joining, method for producing joined body, and method for producing semiconductor device - Google Patents

Copper paste for joining, method for producing joined body, and method for producing semiconductor device

Info

Publication number
SG11201801847SA
SG11201801847SA SG11201801847SA SG11201801847SA SG11201801847SA SG 11201801847S A SG11201801847S A SG 11201801847SA SG 11201801847S A SG11201801847S A SG 11201801847SA SG 11201801847S A SG11201801847S A SG 11201801847SA SG 11201801847S A SG11201801847S A SG 11201801847SA
Authority
SG
Singapore
Prior art keywords
producing
joining
semiconductor device
joined body
copper paste
Prior art date
Application number
SG11201801847SA
Other languages
English (en)
Inventor
Yuki Kawana
Kazuhiko Kurafuchi
Yoshinori Ejiri
Hideo Nakako
Chie Sugama
Dai Ishikawa
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201801847SA publication Critical patent/SG11201801847SA/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06—Metallic powder characterised by the shape of the particles
    • B22F1/068—Flake-like particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering or brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams or slurries
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/01—Manufacture or treatment
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    • H10W72/071—Connecting or disconnecting
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0551—Flake form nanoparticles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/10—Copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2304/00—Physical aspects of the powder
    • B22F2304/05—Submicron size particles
    • B22F2304/056—Particle size above 100 nm up to 300 nm
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
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    • B22F2304/00—Physical aspects of the powder
    • B22F2304/10—Micron size particles, i.e. above 1 micrometer up to 500 micrometer
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
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    • H10W72/01333—Manufacture or treatment of die-attach connectors using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
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    • H10W72/01335—Manufacture or treatment of die-attach connectors using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/641—Dispositions of strap connectors
    • H10W72/646—Dispositions of strap connectors the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/886—Die-attach connectors and strap connectors
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
    • H—ELECTRICITY
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    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W90/00—Package configurations
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    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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SG11201801847SA 2015-09-07 2016-09-07 Copper paste for joining, method for producing joined body, and method for producing semiconductor device SG11201801847SA (en)

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Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109996508B (zh) 2016-11-11 2024-03-15 直观外科手术操作公司 带有基于患者健康记录的器械控制的远程操作手术系统
JP7067002B2 (ja) * 2017-09-22 2022-05-16 昭和電工マテリアルズ株式会社 半導体装置の製造方法
JP7127269B2 (ja) * 2017-10-23 2022-08-30 昭和電工マテリアルズ株式会社 部材接続方法
KR20200070222A (ko) * 2017-10-24 2020-06-17 히타치가세이가부시끼가이샤 열전 변환 모듈의 제조 방법, 열전 변환 모듈 및 열전 변환 모듈용 접합재
WO2019093427A1 (ja) * 2017-11-08 2019-05-16 日立化成株式会社 接合体の製造方法及び接合材
JP6574234B2 (ja) * 2017-12-13 2019-09-11 Ｊｘ金属株式会社 半導体デバイス
JPWO2019188511A1 (ja) * 2018-03-29 2020-12-03 ハリマ化成株式会社 銅ペースト、接合方法および接合体の製造方法
JP7127407B2 (ja) * 2018-07-25 2022-08-30 昭和電工マテリアルズ株式会社 接合用金属ペースト、接合体及び接合体の製造方法
CN112673715B (zh) * 2018-09-14 2025-03-07 株式会社力森诺科 电子零件及电子零件的制造方法
US11817398B2 (en) * 2018-09-28 2023-11-14 Namics Corporation Conductive paste
SG11202105564QA (en) * 2018-11-29 2021-06-29 Showa Denko Materials Co Ltd Method for producing bonded object and semiconductor device and copper bonding paste
TWI701783B (zh) * 2019-06-03 2020-08-11 日商Ｊｘ金屬股份有限公司 半導體裝置
JP6956766B2 (ja) * 2019-08-07 2021-11-02 Ｊｘ金属株式会社 銅粉ペーストを用いた接合方法
JP6956765B2 (ja) * 2019-08-07 2021-11-02 Ｊｘ金属株式会社 銅粉ペーストを用いた接合方法
WO2021060204A1 (ja) * 2019-09-25 2021-04-01 昭和電工マテリアルズ株式会社 焼結銅ピラー形成用銅ペースト及び接合体の製造方法
US12564879B2 (en) 2019-09-30 2026-03-03 Resonac Corporation Copper paste for joining, method for manufacturing joined body, and joined body
DE102020130638A1 (de) * 2019-12-11 2021-06-17 Infineon Technologies Ag Lotmaterial, schichtstruktur, chipgehäuse, verfahren zum bilden einer schichtstruktur, verfahren zum bilden eines chipgehäuses, chipanordnung und verfahren zum bilden einer chipanordnung
JP7302487B2 (ja) * 2020-01-14 2023-07-04 トヨタ自動車株式会社 複合粒子、及び複合粒子の製造方法
JP7391678B2 (ja) * 2020-01-24 2023-12-05 大陽日酸株式会社 接合材
CN111415767B (zh) * 2020-03-06 2021-09-03 深圳第三代半导体研究院 一种基于多维金属纳米材料膏体及其互连工艺
WO2021206098A1 (ja) * 2020-04-07 2021-10-14 昭和電工マテリアルズ株式会社 銅ペースト、ウィックの形成方法及びヒートパイプ
JP7644129B2 (ja) * 2020-09-01 2025-03-11 サンケン電気株式会社 両面冷却パワーモジュールの製造方法
FR3113774B1 (fr) * 2020-09-03 2023-04-21 Commissariat Energie Atomique Procédé d’interconnexion de composants d’un système électronique par frittage
US20240181575A1 (en) * 2021-03-17 2024-06-06 Resonac Corporation Copper paste for forming sintered copper pillars and method for producing bonded body
JP7523406B2 (ja) 2021-04-19 2024-07-26 三菱電機株式会社 半導体装置および半導体装置の製造方法
JPWO2022230806A1 (de) * 2021-04-30 2022-11-03
EP4368317A4 (de) * 2021-07-06 2025-01-08 Resonac Corporation Metallpaste zum verbinden, verbindung und herstellungsverfahren dafür
US20240424614A1 (en) * 2021-07-06 2024-12-26 Resonac Corporation Metal paste for bonding, and bonded body and method for producing same
WO2023210449A1 (ja) 2022-04-28 2023-11-02 三井金属鉱業株式会社 接合用銅ペースト、被接合体の接合方法、接合体の製造方法及び接合用銅ペーストの製造方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4928639B1 (de) 1969-06-17 1974-07-27
JPS506081B1 (de) 1970-12-09 1975-03-11
US5744557A (en) * 1993-06-16 1998-04-28 Minnesota Mining And Manufacturing Company Energy-curable cyanate/ethylenically unsaturated compositions
US7411719B2 (en) * 1995-07-20 2008-08-12 E Ink Corporation Electrophoretic medium and process for the production thereof
US5611884A (en) * 1995-12-11 1997-03-18 Dow Corning Corporation Flip chip silicone pressure sensitive conductive adhesive
JPH11150135A (ja) * 1997-11-17 1999-06-02 Nec Corp 熱伝導性が良好な導電性ペースト及び電子部品
JP4416373B2 (ja) * 2002-03-08 2010-02-17 株式会社日立製作所 電子機器
EP1608040A4 (de) * 2003-03-26 2007-11-14 Jsr Corp Anisotroper leitfähiger verbinder, leitfähige pastenzusammensetzung, sondenglied, waferuntersuchungseinrichtung und waferuntersuchungsverfahren
JP4296347B2 (ja) * 2004-01-19 2009-07-15 Ｄｏｗａエレクトロニクス株式会社 フレーク状銅粉およびその製造法
WO2006076603A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Printable electrical conductors
US8222116B2 (en) * 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
PL380649A1 (pl) * 2006-09-21 2008-03-31 Maciej Jan Pike-Biegunski Koloid, jego pochodna oraz nanocząsteczki substancji elektroprzewodzącej, sposób ich otrzymywania oraz zastosowania
WO2008062548A1 (fr) * 2006-11-24 2008-05-29 Nihon Handa Co., Ltd. Composition de particules métalliques pâteuses et procédé de réunion
JP5006081B2 (ja) 2007-03-28 2012-08-22 株式会社日立製作所 半導体装置、その製造方法、複合金属体及びその製造方法
CN100502104C (zh) * 2007-08-27 2009-06-17 李宝峰 用磷酸铁直接锂化制造锂离子电池正极材料磷酸亚铁锂的方法
JP5011225B2 (ja) 2008-07-09 2012-08-29 ニホンハンダ株式会社 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体、および電気回路接続用バンプの製造方法
DE102008039828A1 (de) * 2008-08-27 2010-03-04 W.C. Heraeus Gmbh Steuerung der Porosität von Metallpasten für den druckfreien Niedertemperatursinterprozess
JP5611537B2 (ja) * 2009-04-28 2014-10-22 日立化成株式会社 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置
FR2947481B1 (fr) * 2009-07-03 2011-08-26 Commissariat Energie Atomique Procede de collage cuivre-cuivre simplifie
CN102470490B (zh) * 2009-07-14 2015-08-05 同和电子科技有限公司 使用金属纳米粒子的接合材料及接合方法
US9390829B2 (en) * 2010-01-25 2016-07-12 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
JP4928639B2 (ja) * 2010-03-15 2012-05-09 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
EP2549488B1 (de) * 2010-03-18 2016-06-08 Furukawa Electric Co., Ltd. Elektrisch leitende paste und unter verwendung der paste hergestelltes elektrisch leitendes verbindungselement
JP5506042B2 (ja) * 2010-07-27 2014-05-28 ハリマ化成株式会社 導電性銅ペースト
US9221130B2 (en) * 2010-12-17 2015-12-29 Furukawa Electric Co., Ltd. Material for thermal bonding, coating material for thermal bonding, coating, and electronic component bonding method
HUE028880T2 (en) 2011-09-20 2017-01-30 Heraeus Deutschland Gmbh & Co Kg Paste and process for connecting electronic components with a carrier
JP5687175B2 (ja) * 2011-11-28 2015-03-18 有限会社 ナプラ 微細空間内に機能部分を形成する方法
JP5598739B2 (ja) * 2012-05-18 2014-10-01 株式会社マテリアル・コンセプト 導電性ペースト
JP5980574B2 (ja) * 2012-05-29 2016-08-31 ハリマ化成株式会社 導電性金属厚膜形成用材料および導電性金属厚膜の形成方法
JP6053386B2 (ja) * 2012-08-09 2016-12-27 古河電気工業株式会社 電子部品の接合方法
EP2960930A4 (de) * 2013-02-22 2017-07-12 Furukawa Electric Co., Ltd. Verbindungsstruktur und halbleiterbauelement
JP6199048B2 (ja) * 2013-02-28 2017-09-20 国立大学法人大阪大学 接合材
US20140287158A1 (en) * 2013-03-21 2014-09-25 Intrinsiq Materials, Inc. Performance of conductive copper paste using copper flake
US20140287159A1 (en) * 2013-03-21 2014-09-25 Intrinsiq Materials, Inc. Conductive paste formulations for improving adhesion to plastic substrates
CN105073939B (zh) * 2013-04-02 2018-11-09 昭和电工株式会社 导电性粘合剂、各向异性导电膜以及使用它们的电子设备
JP6130209B2 (ja) * 2013-05-14 2017-05-17 Ｄｏｗａエレクトロニクス株式会社 導電膜
JP6303392B2 (ja) * 2013-10-22 2018-04-04 日立化成株式会社 銀ペースト及びそれを用いた半導体装置、並びに銀ペーストの製造方法
WO2015098658A1 (ja) * 2013-12-24 2015-07-02 Dic株式会社 金属ナノ粒子を含有する接合用材料
WO2016033526A1 (en) * 2014-08-29 2016-03-03 SDCmaterials, Inc. Composition comprising nanoparticles with desired sintering and melting point temperatures and methods of making thereof
US10333148B2 (en) * 2015-01-29 2019-06-25 Board Of Trustees Of The University Of Arkansas Density modulated thin film electrodes, methods of making same, and applications of same

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JP6794987B2 (ja) 2020-12-02
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JP7192842B2 (ja) 2022-12-20
EP3348338A1 (de) 2018-07-18
JP2021048396A (ja) 2021-03-25
EP3348338A4 (de) 2019-05-01
US10363608B2 (en) 2019-07-30
TWI733693B (zh) 2021-07-21
EP3348338B1 (de) 2020-06-10
CN107949447A (zh) 2018-04-20
CN107949447B (zh) 2020-03-03
CN111283206A (zh) 2020-06-16
WO2017043545A1 (ja) 2017-03-16
US20180250751A1 (en) 2018-09-06
KR102580090B1 (ko) 2023-09-18
TW201718441A (zh) 2017-06-01
KR20180050712A (ko) 2018-05-15
EP3702071A1 (de) 2020-09-02
JP7359267B2 (ja) 2023-10-12
CN111283206B (zh) 2024-11-26

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