SG11202002555WA - Ultra-localized and plasma uniformity control in a fabrication process - Google Patents

Ultra-localized and plasma uniformity control in a fabrication process

Info

Publication number
SG11202002555WA
SG11202002555WA SG11202002555WA SG11202002555WA SG11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA
Authority
SG
Singapore
Prior art keywords
localized
ultra
fabrication process
plasma uniformity
uniformity control
Prior art date
Application number
SG11202002555WA
Inventor
Barton G Lane
Peter G Ventzek
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11202002555WA publication Critical patent/SG11202002555WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202002555WA 2017-10-02 2018-09-28 Ultra-localized and plasma uniformity control in a fabrication process SG11202002555WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/723,005 US11551909B2 (en) 2017-10-02 2017-10-02 Ultra-localized and plasma uniformity control in a plasma processing system
PCT/US2018/053373 WO2019070524A1 (en) 2017-10-02 2018-09-28 Ultra-localized and plasma uniformity control in a fabrication process

Publications (1)

Publication Number Publication Date
SG11202002555WA true SG11202002555WA (en) 2020-04-29

Family

ID=65896170

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002555WA SG11202002555WA (en) 2017-10-02 2018-09-28 Ultra-localized and plasma uniformity control in a fabrication process

Country Status (7)

Country Link
US (1) US11551909B2 (en)
JP (1) JP7264576B2 (en)
KR (1) KR102766205B1 (en)
CN (1) CN111183504B (en)
SG (1) SG11202002555WA (en)
TW (1) TWI853794B (en)
WO (1) WO2019070524A1 (en)

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WO2019146267A1 (en) * 2018-01-29 2019-08-01 株式会社アルバック Reactive ion etching device
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
US11527384B2 (en) 2020-11-24 2022-12-13 Mks Instruments, Inc. Apparatus and tuning method for mitigating RF load impedance variations due to periodic disturbances
TWI829156B (en) 2021-05-25 2024-01-11 大陸商北京屹唐半導體科技股份有限公司 Plasma source array, plasma processing apparatus, plasma processing system and method for processing workpiece in plasma processing apparatus
WO2023023289A1 (en) * 2021-08-20 2023-02-23 Tokyo Electron Limited Apparatus for plasma processing
US12334314B2 (en) * 2021-08-30 2025-06-17 Taiwan Semiconductor Manufacturing Co., Ltd. Dry etcher uniformity control by tuning edge zone plasma sheath
KR102399398B1 (en) * 2021-09-27 2022-05-18 아리온주식회사 RF split adjusting system
US20240087847A1 (en) * 2022-09-09 2024-03-14 Applied Materials, Inc. Symmetric antenna arrays for high density plasma enhanced process chamber
CN118053785A (en) * 2022-11-10 2024-05-17 中微半导体设备(上海)股份有限公司 A plasma processing chamber, semiconductor processing system and manipulator
US12278090B2 (en) 2023-04-18 2025-04-15 Mks Instruments, Inc. Enhanced tuning methods for mitigating RF load impedance variations due to periodic disturbances
WO2025192298A1 (en) * 2024-03-11 2025-09-18 東京エレクトロン株式会社 Plasma processing device and plasma control method

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US4864464A (en) * 1989-01-09 1989-09-05 Micron Technology, Inc. Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps
US6353206B1 (en) * 1996-05-30 2002-03-05 Applied Materials, Inc. Plasma system with a balanced source
US6178920B1 (en) * 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
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US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
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Also Published As

Publication number Publication date
JP2021503686A (en) 2021-02-12
JP7264576B2 (en) 2023-04-25
TWI853794B (en) 2024-09-01
US20190103254A1 (en) 2019-04-04
TW201929031A (en) 2019-07-16
KR102766205B1 (en) 2025-02-10
US11551909B2 (en) 2023-01-10
CN111183504A (en) 2020-05-19
WO2019070524A1 (en) 2019-04-11
CN111183504B (en) 2023-07-21
KR20200051663A (en) 2020-05-13

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