SG112892A1 - Sub-atmospheric supply of fluorine to semiconductor process chamber - Google Patents

Sub-atmospheric supply of fluorine to semiconductor process chamber

Info

Publication number
SG112892A1
SG112892A1 SG200305705A SG200305705A SG112892A1 SG 112892 A1 SG112892 A1 SG 112892A1 SG 200305705 A SG200305705 A SG 200305705A SG 200305705 A SG200305705 A SG 200305705A SG 112892 A1 SG112892 A1 SG 112892A1
Authority
SG
Singapore
Prior art keywords
fluorine
sub
process chamber
semiconductor process
atmospheric supply
Prior art date
Application number
SG200305705A
Other languages
English (en)
Inventor
Allen Hogle Richard
A Mcfarlane Graham
Hodgson Graham
Harold Buckley Peter
Original Assignee
Boc Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Inc filed Critical Boc Group Inc
Publication of SG112892A1 publication Critical patent/SG112892A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45593—Recirculation of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG200305705A 2002-10-18 2003-10-01 Sub-atmospheric supply of fluorine to semiconductor process chamber SG112892A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/274,250 US20040074516A1 (en) 2002-10-18 2002-10-18 Sub-atmospheric supply of fluorine to semiconductor process chamber

Publications (1)

Publication Number Publication Date
SG112892A1 true SG112892A1 (en) 2005-07-28

Family

ID=32093011

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200305705A SG112892A1 (en) 2002-10-18 2003-10-01 Sub-atmospheric supply of fluorine to semiconductor process chamber

Country Status (6)

Country Link
US (1) US20040074516A1 (fr)
EP (1) EP1441043A3 (fr)
JP (1) JP2004140373A (fr)
KR (1) KR20040034490A (fr)
SG (1) SG112892A1 (fr)
TW (1) TW200419665A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100997964B1 (ko) * 2003-06-16 2010-12-02 삼성전자주식회사 박막 트랜지스터 표시판의 제조 방법
US7581549B2 (en) * 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
JP4647359B2 (ja) * 2005-03-23 2011-03-09 株式会社日立国際電気 基板処理装置および成膜方法
US20070079849A1 (en) * 2005-10-12 2007-04-12 Richard Hogle Integrated chamber cleaning system
KR20090015054A (ko) * 2006-04-10 2009-02-11 솔베이 플루오르 게엠베하 에칭 방법
CN101646801B (zh) * 2007-03-27 2011-11-16 乔治洛德方法研究和开发液化空气有限公司 用于低温热清洁的方法
US20080236483A1 (en) * 2007-03-27 2008-10-02 Jun Sonobe Method for low temperature thermal cleaning
JP5178342B2 (ja) * 2008-06-23 2013-04-10 キヤノン株式会社 堆積物除去方法及び堆積膜形成方法
US8308871B2 (en) * 2008-11-26 2012-11-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Thermal cleaning gas production and supply system
JP5521372B2 (ja) * 2009-04-03 2014-06-11 セントラル硝子株式会社 フッ素ガスのｉｎ−ｓｉｔｕガス混合および希釈システム
SG11201501811PA (en) * 2012-09-10 2015-04-29 Solvay A CHAMBER CLEANING METHOD USING F<sb>2</sb> AND A PROCESS FOR MANUFACTURE OF F<sb>2</sb> FOR THIS METHOD
KR102010460B1 (ko) 2018-11-23 2019-08-13 한국화학연구원 산화 삼불화아민의 제조방법
FR3112177B1 (fr) * 2020-07-09 2022-07-08 Pfeiffer Vacuum Ligne de vide et procédé de contrôle d’une ligne de vide

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114726A (ja) * 1984-06-29 1986-01-22 Fujitsu Ltd 半導体基板の処理方法
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
JPH08124993A (ja) * 1994-10-27 1996-05-17 Kokusai Electric Co Ltd 半導体製造装置のロードロック室

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2408256A1 (de) * 1974-02-21 1975-09-04 Leybold Heraeus Gmbh & Co Kg Turbomolekularvakuumpumpe
US3998180A (en) * 1975-04-07 1976-12-21 Union Carbide Corporation Vapor deposition apparatus including fluid transfer means
JP2848947B2 (ja) * 1990-04-25 1999-01-20 三井化学株式会社 三弗化窒素ガスの精製方法
DE69132867T2 (de) * 1990-08-01 2002-09-12 Matsushita Electric Industrial Co., Ltd. Drehkolbenanlage für flüssige Medien
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
EP0959496B1 (fr) * 1998-05-22 2006-07-19 Applied Materials, Inc. Procédé pour la fabrication d'une couche diélectrique auto-planarisée pour une rainure d'isolation superficielle
JP4805460B2 (ja) * 1999-03-04 2011-11-02 サーフィス テクノロジー システムズ ピーエルシー 反応プロセスガス生成方法及びシステム
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US6843258B2 (en) * 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114726A (ja) * 1984-06-29 1986-01-22 Fujitsu Ltd 半導体基板の処理方法
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
JPH08124993A (ja) * 1994-10-27 1996-05-17 Kokusai Electric Co Ltd 半導体製造装置のロードロック室

Also Published As

Publication number Publication date
US20040074516A1 (en) 2004-04-22
EP1441043A3 (fr) 2004-10-06
EP1441043A2 (fr) 2004-07-28
JP2004140373A (ja) 2004-05-13
TW200419665A (en) 2004-10-01
KR20040034490A (ko) 2004-04-28

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